Intimate Monolithic integration of Chip-scale Photonic Circuits

Cataloged from PDF version of article.In this paper, we introduce a robust monolithic integration technique for fabricating photonic integrated circuits comprising optoelectronic devices (e.g., surface-illuminated photodetectors, waveguide quantum-well modulators, etc.) that are made of completely separate epitaxial structures and possibly reside at different locations across the wafer as necessary. Our technique is based on the combination of multiple crystal growth steps, judicious placement of epitaxial etch-stop layers, a carefully designed etch sequence, and self-planarization and passivation steps to compactly integrate optoelectronic devices. This multigrowth integration technique is broadly applicable to most III-V materials and can be exploited to fabricate sophisticated, highly integrated, multifunctional photonic integrated circuits on a single substrate. As a successful demonstration of this technique, we describe integrated photonic switches that consume only a 300 x 300 mu m footprint and incorporate InGaAs photodetector mesas and InGaAsP/InP quantum-well modulator waveguides separated by 50 mu m on an InP substrate. These switches perform electrically-reconfigurable optically-controlled wavelength conversion at multi-Gb/s data rates over the entire center telecommunication wavelength band

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV

Overview of the KoRIA Facility for Rare Isotope Beams

The Korea Rare Isotope Accelerator, currently referred to as KoRIA, is briefly presented. The KoRIA facility is aimed to enable cutting-edge sciences in a wide range of fields. It consists of a 70 kW isotope separator on-line (ISOL) facility driven by a 70 MeV, 1 mA proton cyclotron and a 400 kW in-flight fragmentation (IFF) facility. The ISOL facility uses a superconducting (SC) linac for post-acceleration of rare isotopes up to about 18 MeV/u, while the SC linac of IFF facility is capable of accelerating uranium beams up to 200 MeV/u, 8 p mu A and proton beams up to 600 MeV, 660 mu A. Overall features of the KoRIA facility are presented with a focus on the accelerator design.close5