Superlattice properties of carbon nanotubes in a transverse electric field

Electron motion in a (n,1) carbon nanotube is shown to correspond to a de Broglie wave propagating along a helical line on the nanotube wall. This helical motion leads to periodicity of the electron potential energy in the presence of an electric field normal to the nanotube axis. The period of this potential is proportional to the nanotube radius and is greater than the interatomic distance in the nanotube. As a result, the behavior of an electron in a (n,1) nanotube subject to a transverse electric field is similar to that in a semiconductor superlattice. In particular, Bragg scattering of electrons from the long-range periodic potential results in the opening of gaps in the energy spectrum of the nanotube. Modification of the bandstructure is shown to be significant for experimentally attainable electric fields, which raises the possibility of applying this effect to novel nanoelectronic devices.Comment: 7 pages, 3 figure

InGaAs/GaAs/alkanethiolate radial superlattices: Experimental

A radial InGaAs/GaAs/1-hexadecanethiol superlattice is fabricated by the roll-up of a strained InGaAs/GaAs bilayer passivated with a molecular self-assembled monolayer. Our technique allows the formation of multi-period inorganic/organic hybrid heterostructures. This paper contains the detailed experimental description of how to fabricate these structures.Comment: 2 pages, no figures, Version 2; minor changes (fixed typos and update references

Classical properties of low-dimensional conductors: Giant capacitance and non-Ohmic potential drop

Electrical field arising around an inhomogeneous conductor when an electrical current passes through it is not screened, as distinct from 3D conductors, in low-dimensional conductors. As a result, the electrical field depends on the global distribution of the conductivity sigma(x) rather than on the local value of it, inhomogeneities of sigma(x) produce giant capacitances C(omega) that show frequency dependence at relatively low omega, and electrical fields develop in vast regions around the inhomogeneities of sigma(x). A theory of these phenomena is presented for 2D conductors.Comment: 5 pages, two-column REVTeX, to be published in Physical Review Letter

Quantum Hall effect in a high-mobility two-dimensional electron gas on the surface of a cylinder

The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous current-density distribution gives rise to additional features in the magneto-transport, such as resistance asymmetry and modified longitudinal resistances. We experimentally demonstrate that the asymmetry relations satisfied in the integer filling factor regime are valid also in the transition regime to non-integer filling factors, thereby suggesting a more general form of these asymmetry relations. A model is developed based on the screening theory of the integer quantum Hall effect that allows the self-consistent calculation of the local electron density and thereby the local current density including the current along incompressible stripes. The model, which also includes the so-called `static skin effect' to account for the current density distribution in the compressible regions, is capable of explaining the main experimental observations. Due to the existence of an incompressible-compressible transition in the bulk, the system behaves always metal-like in contrast to the conventional Landauer-Buettiker description, in which the bulk remains completely insulating throughout the quantized Hall plateau regime

Low-temperature spin relaxation in n-type GaAs

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is observed in the dependence of the spin lifetime on doping near n_D = 2x10^16 cm^{-3}. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interactio

Shot noise in ferromagnet--normal metal systems

A semiclassical theory of the low frequency shot noise in ferromagnet - normal metal systems is formulated. Non-collinear magnetization directions of the ferromagnetic leads, arbitrary junctions and the elastic and inelastic scattering regimes are considered. The shot noise is governed by a set of mesoscopic parameters that are expressed in terms of the microscopic details of the junctions in the circuit. Explicit results in the case of ballistic, tunnel, and diffusive junctions are evaluated. The shot noise, the current and the Fano factor are calculated for a double barrier ferromagnet - normal metal - ferromagnet system. It is demonstrated that the shot noise can have a non-monotonic behavior as a function of the relative angle between the magnetizations of the ferromagnetic reservoirs.Comment: 17 pages, 7 figure

Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem

Theory of electrical spin injection from a ferromagnetic (FM) metal into a normal (N) conductor is presented. We show that tunnel contacts (T) can dramatically increase spin injection and solve the problem of the mismatch in the conductivities of a FM metal and a semiconductor microstructure. We also present explicit expressions for the spin-valve resistance of FM-T-N- and FM-T-N-T-FM-junctions with tunnel contacts at the interfaces and show that the resistance includes both positive and negative contributions (Kapitza resistance and injection conductivity, respectively).Comment: 4 pages, to appear in Phys. Rev. B (rapid communications

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio

Pan-cancer analysis of whole genomes

Cancer is driven by genetic change, and the advent of massively parallel sequencing has enabled systematic documentation of this variation at the whole-genome scale(1-3). Here we report the integrative analysis of 2,658 whole-cancer genomes and their matching normal tissues across 38 tumour types from the Pan-Cancer Analysis of Whole Genomes (PCAWG) Consortium of the International Cancer Genome Consortium (ICGC) and The Cancer Genome Atlas (TCGA). We describe the generation of the PCAWG resource, facilitated by international data sharing using compute clouds. On average, cancer genomes contained 4-5 driver mutations when combining coding and non-coding genomic elements; however, in around 5% of cases no drivers were identified, suggesting that cancer driver discovery is not yet complete. Chromothripsis, in which many clustered structural variants arise in a single catastrophic event, is frequently an early event in tumour evolution; in acral melanoma, for example, these events precede most somatic point mutations and affect several cancer-associated genes simultaneously. Cancers with abnormal telomere maintenance often originate from tissues with low replicative activity and show several mechanisms of preventing telomere attrition to critical levels. Common and rare germline variants affect patterns of somatic mutation, including point mutations, structural variants and somatic retrotransposition. A collection of papers from the PCAWG Consortium describes non-coding mutations that drive cancer beyond those in the TERT promoter(4); identifies new signatures of mutational processes that cause base substitutions, small insertions and deletions and structural variation(5,6); analyses timings and patterns of tumour evolution(7); describes the diverse transcriptional consequences of somatic mutation on splicing, expression levels, fusion genes and promoter activity(8,9); and evaluates a range of more-specialized features of cancer genomes(8,10-18).Peer reviewe