71 research outputs found

    Biexcitonic molecules survive excitons at the Mott transition

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    When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually referred to as the Mott transition, is driven by the mutual effects of phase-space filling and Coulomb screening because of the presence of other charges nearby. It drastically affects the optical and electrical characteristics of semiconductors and may, for example, drive the transition from a polariton laser to a vertical cavity surface-emitting laser. Usually, the possible existence of excitonic molecules (or biexcitons) is neglected in the understanding of the Mott transition because the biexciton is supposed to be less robust against screening effects. Here, against common beliefs, we observe that the biexciton in a GaN quantum well is more stable towards the Mott transition than the exciton

    Vaccine breakthrough hypoxemic COVID-19 pneumonia in patients with auto-Abs neutralizing type I IFNs

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    Life-threatening `breakthrough' cases of critical COVID-19 are attributed to poor or waning antibody response to the SARS- CoV-2 vaccine in individuals already at risk. Pre-existing autoantibodies (auto-Abs) neutralizing type I IFNs underlie at least 15% of critical COVID-19 pneumonia cases in unvaccinated individuals; however, their contribution to hypoxemic breakthrough cases in vaccinated people remains unknown. Here, we studied a cohort of 48 individuals ( age 20-86 years) who received 2 doses of an mRNA vaccine and developed a breakthrough infection with hypoxemic COVID-19 pneumonia 2 weeks to 4 months later. Antibody levels to the vaccine, neutralization of the virus, and auto- Abs to type I IFNs were measured in the plasma. Forty-two individuals had no known deficiency of B cell immunity and a normal antibody response to the vaccine. Among them, ten (24%) had auto-Abs neutralizing type I IFNs (aged 43-86 years). Eight of these ten patients had auto-Abs neutralizing both IFN-a2 and IFN-., while two neutralized IFN-omega only. No patient neutralized IFN-ss. Seven neutralized 10 ng/mL of type I IFNs, and three 100 pg/mL only. Seven patients neutralized SARS-CoV-2 D614G and the Delta variant (B.1.617.2) efficiently, while one patient neutralized Delta slightly less efficiently. Two of the three patients neutralizing only 100 pg/mL of type I IFNs neutralized both D61G and Delta less efficiently. Despite two mRNA vaccine inoculations and the presence of circulating antibodies capable of neutralizing SARS-CoV-2, auto-Abs neutralizing type I IFNs may underlie a significant proportion of hypoxemic COVID-19 pneumonia cases, highlighting the importance of this particularly vulnerable population

    Rare predicted loss-of-function variants of type I IFN immunity genes are associated with life-threatening COVID-19

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    Background: We previously reported that impaired type I IFN activity, due to inborn errors of TLR3- and TLR7-dependent type I interferon (IFN) immunity or to autoantibodies against type I IFN, account for 15–20% of cases of life-threatening COVID-19 in unvaccinated patients. Therefore, the determinants of life-threatening COVID-19 remain to be identified in ~ 80% of cases. Methods: We report here a genome-wide rare variant burden association analysis in 3269 unvaccinated patients with life-threatening COVID-19, and 1373 unvaccinated SARS-CoV-2-infected individuals without pneumonia. Among the 928 patients tested for autoantibodies against type I IFN, a quarter (234) were positive and were excluded. Results: No gene reached genome-wide significance. Under a recessive model, the most significant gene with at-risk variants was TLR7, with an OR of 27.68 (95%CI 1.5–528.7, P = 1.1 × 10−4) for biochemically loss-of-function (bLOF) variants. We replicated the enrichment in rare predicted LOF (pLOF) variants at 13 influenza susceptibility loci involved in TLR3-dependent type I IFN immunity (OR = 3.70[95%CI 1.3–8.2], P = 2.1 × 10−4). This enrichment was further strengthened by (1) adding the recently reported TYK2 and TLR7 COVID-19 loci, particularly under a recessive model (OR = 19.65[95%CI 2.1–2635.4], P = 3.4 × 10−3), and (2) considering as pLOF branchpoint variants with potentially strong impacts on splicing among the 15 loci (OR = 4.40[9%CI 2.3–8.4], P = 7.7 × 10−8). Finally, the patients with pLOF/bLOF variants at these 15 loci were significantly younger (mean age [SD] = 43.3 [20.3] years) than the other patients (56.0 [17.3] years; P = 1.68 × 10−5). Conclusions: Rare variants of TLR3- and TLR7-dependent type I IFN immunity genes can underlie life-threatening COVID-19, particularly with recessive inheritance, in patients under 60 years old

    Pan-cancer analysis of whole genomes

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    Cancer is driven by genetic change, and the advent of massively parallel sequencing has enabled systematic documentation of this variation at the whole-genome scale(1-3). Here we report the integrative analysis of 2,658 whole-cancer genomes and their matching normal tissues across 38 tumour types from the Pan-Cancer Analysis of Whole Genomes (PCAWG) Consortium of the International Cancer Genome Consortium (ICGC) and The Cancer Genome Atlas (TCGA). We describe the generation of the PCAWG resource, facilitated by international data sharing using compute clouds. On average, cancer genomes contained 4-5 driver mutations when combining coding and non-coding genomic elements; however, in around 5% of cases no drivers were identified, suggesting that cancer driver discovery is not yet complete. Chromothripsis, in which many clustered structural variants arise in a single catastrophic event, is frequently an early event in tumour evolution; in acral melanoma, for example, these events precede most somatic point mutations and affect several cancer-associated genes simultaneously. Cancers with abnormal telomere maintenance often originate from tissues with low replicative activity and show several mechanisms of preventing telomere attrition to critical levels. Common and rare germline variants affect patterns of somatic mutation, including point mutations, structural variants and somatic retrotransposition. A collection of papers from the PCAWG Consortium describes non-coding mutations that drive cancer beyond those in the TERT promoter(4); identifies new signatures of mutational processes that cause base substitutions, small insertions and deletions and structural variation(5,6); analyses timings and patterns of tumour evolution(7); describes the diverse transcriptional consequences of somatic mutation on splicing, expression levels, fusion genes and promoter activity(8,9); and evaluates a range of more-specialized features of cancer genomes(8,10-18).Peer reviewe

    Retrospective evaluation of whole exome and genome mutation calls in 746 cancer samples

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    Funder: NCI U24CA211006Abstract: The Cancer Genome Atlas (TCGA) and International Cancer Genome Consortium (ICGC) curated consensus somatic mutation calls using whole exome sequencing (WES) and whole genome sequencing (WGS), respectively. Here, as part of the ICGC/TCGA Pan-Cancer Analysis of Whole Genomes (PCAWG) Consortium, which aggregated whole genome sequencing data from 2,658 cancers across 38 tumour types, we compare WES and WGS side-by-side from 746 TCGA samples, finding that ~80% of mutations overlap in covered exonic regions. We estimate that low variant allele fraction (VAF < 15%) and clonal heterogeneity contribute up to 68% of private WGS mutations and 71% of private WES mutations. We observe that ~30% of private WGS mutations trace to mutations identified by a single variant caller in WES consensus efforts. WGS captures both ~50% more variation in exonic regions and un-observed mutations in loci with variable GC-content. Together, our analysis highlights technological divergences between two reproducible somatic variant detection efforts

    Small-signal transient response and turn-on delay of polariton laser diodes

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    We present a theoretical description of the small-signal transient response of polariton laser diodes (pol-LDs) based on simplified coupled rate equations describing the exciton reservoir and the ground-state polariton populations. The analytic expressions derived for two pumping geometries, which are valid for all inorganic semiconductors suitable for the realization of pol-LDs, are compared to exact numerical calculations performed for the specific case of GaN-based devices. The two approaches show excellent agreement provided the current step transient remains within the small-signal limit. We report that the temporal attenuation of the envelopes of the oscillations matches half the value of the damping factor (gamma(d)) of the pol-LDs, which is proportional to the square of the oscillation relaxation resonance frequency. An explicit expression for the dependence of d g on both the exciton-photon detuning and the driving current (equivalently the optical pump power) is also obtained. In a further step, we derive the expression for the turn-on delay (t(d)) associated with the build-up of the exciton reservoir population up to its threshold value before coherent light emission occurs. We show that td has the same functional form for the two pumping geometries. It is equal to the effective exciton lifetime (tau(xeff)) weighted by a logarithmic dependence on the initial and final driving currents. In addition, tau(xeff) t is shown to be approximately equal to the exciton lifetime, which proves to be the main parameter governing the build-up of polariton lasing/condensation. Beyond electrically driven polariton lasers, we highlight that the temporal shape of the transients could also be easily tested by monitoring the time dependence of the output power of optically pumped polariton lasers subjected to a sudden increase in the continuous wave pump power within the small-signal limit

    A novel class of coherent light emitters: polariton lasers

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    The specificities of polariton lasers-a new generation of coherent light-emitting devices where the relaxation of the bosonic quasiparticles responsible for the light emission, the polaritons, is stimulated whereas the photon emission process issued from the radiative decay of those polaritons is purely spontaneous-are reviewed. It is shown that the practical realization of such devices able to operate at room temperature would most likely rely on wide bandgap semiconductors (inorganic or organic ones) exhibiting highly stable excitons/polaritons. Using III-nitrides, the most advanced of the candidates to date, an electrically driven multiple quantum well polariton laser would display a threshold current density down to similar to 100 A cm(-2), a value more than one order of magnitude lower than that of state of the art GaN-based edge-emitting laser diodes. For the sake of comparison, the main features of optically pumped polariton lasers available that differ from those of their conventional counterparts, namely vertical cavity surface-emitting lasers, are also discussed

    III-nitride photonic cavities

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    Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that are used for optical data storage. Beyond such conventional optoelectronic devices, in this review, we explore the progress made in the past 15 years with this low refractive index material family for the realization of microdisks as well as 2D and 1D photonic crystal (PhC) membrane cavities. Critical aspects related to their design and fabrication are first highlighted. Then, the optical properties of passive PhC structures designed for near-infrared such as their quality factor and their mode volume are addressed. Additional challenges dealing with fabrication pertaining to structures designed for shorter wavelengths, namely the visible to ultraviolet spectral range, are also critically reviewed and analyzed. Various applications ranging from second and third harmonic generation to microlasers and nanolasers are then discussed. Finally, forthcoming challenges and novel fields of application of III-N photonic cavities are commented

    LIGHT-EMITTING DIODES Solid-state lighting on glass

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