Si/SiC bonded wafer: a route to carbon free SiO2 on SiC

This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities (Dit). Physical characterization demonstrate that the transferred Si layer is relatively smooth, uniform, and essentially monocrystalline. The Si on SiC has been totally or partially thermally oxidized at 900–1150 °C. Dit for both partially and completely oxidized silicon layers on SiC were significantly lower than Dit values for MOS capacitors fabricated via conventional thermal oxidation of SiC. The quality of the SiO2, formed by oxidation of a wafer-bonded silicon layer reported here has the potential to realize a number of innovative heterojunction concepts and devices, including the fabrication of high quality and reliable SiO2 gate oxides

Association between Variants on Chromosome 4q25, 16q22 and 1q21 and Atrial Fibrillation in the Polish Population

Genome-wide studies have shown that polymorphisms on chromosome 4q25, 16q22 and 1q21 correlate with atrial fibrillation (AF). However, the distribution of these polymorphisms differs significantly among populations.To test the polymorphisms on chromosome 4q25, 16q22 and 1q21 in a group of patients (pts) that underwent catheter ablation of AF.Four hundred and ten patients with AF that underwent pulmonary vein isolation were included in the study. Control group (n = 550) was taken from healthy population, matched for age, sex and presence of hypertension. All participants were genotyped for the presence of the rs2200733, rs10033464, rs17570669, rs3853445, rs6838973 (4q25), rs7193343 (16q22) and rs13376333 (1q21) polymorphisms.All the polymorphisms tested (except rs17570669) correlated significantly with AF in univariate analysis (p values between 0.039 for rs7193343 and 2.7e-27 for rs2200733), with the odds ratio (OR) 0.572 and 0.617 for rs3853445 and rs6838973, respectively (protective role) and OR 1.268 to 3.52 for the other polymorphisms. All 4q25 SNPs tested but rs3853445 were independently linked with AF in multivariate logistic regression analysis. In haplotype analysis six out of nine 4q25 haplotypes were significantly linked with AF. The T allele of rs2200733 favoured increased number of episodes of AF per month (p = 0.045) and larger pulmonary vein diameter (recessive model, p = 0.032).Patients qualified for catheter ablation of AF have a significantly higher frequency of 4q25, 16q22 and 1q21 variants than the control group. The T allele of rs2200733 favours larger pulmonary veins and increased number of episodes of AF

withdrawn 2017 hrs ehra ecas aphrs solaece expert consensus statement on catheter and surgical ablation of atrial fibrillation

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Silicon-on-SiC, a novel semiconductor structure for power devices

A physical and electrical analysis of Si/SiC heterojunctions formed by layer transfer based on the smartcut (R) process is presented in this paper. AFM and SEM have revealed a high bonding quality when Si wafers are transferred to SiC on-axis wafers. XRD points to the fact that the layers are monocrystalline in nature. A surface AFM analysis of the bonded wafers demonstrated a smooth surface (rms = 5.8 nm) suitable for semiconductor device fabrication. Capacitors have been fabricated from the Si/SiC heterojunctions, which have been totally oxidised. Oxidised Si/SiC structures yielded a lower density of interface states than conventional thermal oxidation techniques

Si/SiC heterojunctions fabricated by direct wafer bonding

The physical and electrical properties of Si/SiC heterojunctions formed by direct wafer bonding are presented. Atomic force microscopy (AFM) and imaging reveal an improved bonding quality when Si wafers are transferred to on-axis substrates as opposed to off-axis epitaxial layers. AFM analysis of the bonded wafer achieves a smoother surface when compared to molecular beam epitaxy-grown Si layers. A reduced roughness of only 5.8 nm was measured for bonded wafers. Current-voltage measurements were used to extract the rectifying characteristics of Si/SiC heterojunctions. These Si layers could lead to improved high quality and reliable SiO2 gate oxides. (C) 2008 The Electrochemical Society

SiÕSiC Heterojunctions Fabricated by Direct Wafer Bonding

The physical and electrical properties of Si/SiC heterojunctions formed by direct wafer bonding are presented. Atomic force microscopy ͑AFM͒ and imaging reveal an improved bonding quality when Si wafers are transferred to on-axis substrates as opposed to off-axis epitaxial layers. AFM analysis of the bonded wafer achieves a smoother surface when compared to molecular beam epitaxy-grown Si layers. A reduced roughness of only 5.8 nm was measured for bonded wafers. Current-voltage measurements were used to extract the rectifying characteristics of Si/SiC heterojunctions. These Si layers could lead to improved high quality and reliable SiO 2 gate oxides

Investigation of Si/4H-SiC hetero-junction growth and electrical properties

This paper describes the growth and charactcrisation of Si/SiC heterojunction Structures. Heterojunction Structures are of interest for low on-resistance diodes and as potential solutions to fabricating SiC MOS devices with lower interface state densities. The formation of the Si/SiC heterojunction using Chemical Vapour Deposition (CVD), Molecular Beam Epitaxy (MBE), Electron Beam Evaporation under UHV conditions (EBE-UHV) and Layer Transfer (I-T) are reported. The physical nature of Si/SiC Structures has been investigated using scanning electron microscopy (SEM). Results of electrical characterisation of the Si/SiC heterojunctions, are also reported. Finally. thermal oxidation of a Si / SiC heterojunction structures has been performed. The C(V) characteristics of the resulting oxides are compared to conventional thermal oxides on SiC

Radiation Safety and Electrophysiologists: Radiation Protection Status-Go for Zero Fluoroscopy European Heart Rhythm Association Registry

Background: The purpose of this study was to analyze electrophysiologists' radiation-protective devices for occupational exposure across European countries. Methods: Data reported herein were gathered from the international, multicenter prospective Go for Zero Fluoroscopy registry performed in years 2018-2019. The registry encompassed 25 European electrophysiological centers from 14 countries and up to 5 operators from each center. Results: The analysis included 95 operators (median age: 39 years, 85% of male, median training time: 5 years). The most frequently used X-ray protection tools (used by ≥80% of the group) were lead aprons, thyroid shields, screens below the table, glass in the laboratory, and least often (<7%) protective gloves and cabin. No statistically significant differences regarding the number of procedures performed monthly, electrophysiologists' experience and gender, and radiation exposure dose or radiation protection tools were observed, except lead thyroid shields and eyeglasses, which were more often used in case of fewer electrophysiological procedures performed (<20 procedures per month). Operators who were protected by >4 X-ray protection tools were exposed to lower radiation levels than those who were protected by ≤4 X-ray protection tools (median radiation exposure: 0.6 [0.2-1.1] vs. 0.2 [0.1-0.2] mSv per month, p < 0.0001; 1.1 [0.1-12.0] vs. 0.5 [0.1-1.1] mSv per year, p < 0.0001), respectively. Conclusions: Electrophysiologists' radiation-protective devices for occupational exposure are similar across European centers and in accordance with the applicable X-ray protection protocols, irrespective of the level of experience, number of monthly performed EP procedures, and gender