Si/SiC bonded wafer: a route to carbon free SiO2 on SiC

This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities (Dit). Physical characterization demonstrate that the transferred Si layer is relatively smooth, uniform, and essentially monocrystalline. The Si on SiC has been totally or partially thermally oxidized at 900–1150 °C. Dit for both partially and completely oxidized silicon layers on SiC were significantly lower than Dit values for MOS capacitors fabricated via conventional thermal oxidation of SiC. The quality of the SiO2, formed by oxidation of a wafer-bonded silicon layer reported here has the potential to realize a number of innovative heterojunction concepts and devices, including the fabrication of high quality and reliable SiO2 gate oxides

Association between Variants on Chromosome 4q25, 16q22 and 1q21 and Atrial Fibrillation in the Polish Population

Genome-wide studies have shown that polymorphisms on chromosome 4q25, 16q22 and 1q21 correlate with atrial fibrillation (AF). However, the distribution of these polymorphisms differs significantly among populations.To test the polymorphisms on chromosome 4q25, 16q22 and 1q21 in a group of patients (pts) that underwent catheter ablation of AF.Four hundred and ten patients with AF that underwent pulmonary vein isolation were included in the study. Control group (n = 550) was taken from healthy population, matched for age, sex and presence of hypertension. All participants were genotyped for the presence of the rs2200733, rs10033464, rs17570669, rs3853445, rs6838973 (4q25), rs7193343 (16q22) and rs13376333 (1q21) polymorphisms.All the polymorphisms tested (except rs17570669) correlated significantly with AF in univariate analysis (p values between 0.039 for rs7193343 and 2.7e-27 for rs2200733), with the odds ratio (OR) 0.572 and 0.617 for rs3853445 and rs6838973, respectively (protective role) and OR 1.268 to 3.52 for the other polymorphisms. All 4q25 SNPs tested but rs3853445 were independently linked with AF in multivariate logistic regression analysis. In haplotype analysis six out of nine 4q25 haplotypes were significantly linked with AF. The T allele of rs2200733 favoured increased number of episodes of AF per month (p = 0.045) and larger pulmonary vein diameter (recessive model, p = 0.032).Patients qualified for catheter ablation of AF have a significantly higher frequency of 4q25, 16q22 and 1q21 variants than the control group. The T allele of rs2200733 favours larger pulmonary veins and increased number of episodes of AF

withdrawn 2017 hrs ehra ecas aphrs solaece expert consensus statement on catheter and surgical ablation of atrial fibrillation

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Electronic Performance Support Systems in Production and Operations Management – State of the Art and Future Development Abstract Code: 002-0213

Abstract: Actors in production and operations management (POM) processes are required to efficiently use data, information, and knowledge. Thus, every actor will become a knowledge worker to a certain extent. This article deals with the convergence of production processes, learning processes, and knowledge processes and corresponding systems. Whereby, MRP-systems are used for the core tasks, Electronic Performance Support Systems (EPSSs) have emerged supporting knowledge management activities, such as distributing, preserving, and using knowledge. We describe and analyze knowledge management’s and EPSS’s evolution from the production and operations management perspective. The analysis leads to the conclusion that these systems need to be integrated in state-of-the-art production processes. We discuss strengths and weaknesses of current approaches and give insights into promising cases and applications. Finally, we present future developments, trends, and further research opportunities

Silicon-on-SiC, a novel semiconductor structure for power devices

A physical and electrical analysis of Si/SiC heterojunctions formed by layer transfer based on the smartcut (R) process is presented in this paper. AFM and SEM have revealed a high bonding quality when Si wafers are transferred to SiC on-axis wafers. XRD points to the fact that the layers are monocrystalline in nature. A surface AFM analysis of the bonded wafers demonstrated a smooth surface (rms = 5.8 nm) suitable for semiconductor device fabrication. Capacitors have been fabricated from the Si/SiC heterojunctions, which have been totally oxidised. Oxidised Si/SiC structures yielded a lower density of interface states than conventional thermal oxidation techniques

Si/SiC heterojunctions fabricated by direct wafer bonding

The physical and electrical properties of Si/SiC heterojunctions formed by direct wafer bonding are presented. Atomic force microscopy (AFM) and imaging reveal an improved bonding quality when Si wafers are transferred to on-axis substrates as opposed to off-axis epitaxial layers. AFM analysis of the bonded wafer achieves a smoother surface when compared to molecular beam epitaxy-grown Si layers. A reduced roughness of only 5.8 nm was measured for bonded wafers. Current-voltage measurements were used to extract the rectifying characteristics of Si/SiC heterojunctions. These Si layers could lead to improved high quality and reliable SiO2 gate oxides. (C) 2008 The Electrochemical Society

Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems

Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being used with silicon IGBTs in dasiahybridpsila inverter modules, the real advantages will be seen when silicon switching devices can be replaced by SiC. This paper describes the current state of SiC diode and MOSFET technology, discussing possible solutions to making these devices commercially viable

SiÕSiC Heterojunctions Fabricated by Direct Wafer Bonding

The physical and electrical properties of Si/SiC heterojunctions formed by direct wafer bonding are presented. Atomic force microscopy ͑AFM͒ and imaging reveal an improved bonding quality when Si wafers are transferred to on-axis substrates as opposed to off-axis epitaxial layers. AFM analysis of the bonded wafer achieves a smoother surface when compared to molecular beam epitaxy-grown Si layers. A reduced roughness of only 5.8 nm was measured for bonded wafers. Current-voltage measurements were used to extract the rectifying characteristics of Si/SiC heterojunctions. These Si layers could lead to improved high quality and reliable SiO 2 gate oxides