26 research outputs found

    The Influence of Analyser Geometry Effects in Scanning Electron Microscope Voltage Contrast Measurements

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    A computer simulation model used to study specimen dependent and analyser geometry dependent effects is described in this paper. With this model, the influence of the specimen dependent effect on quantitative voltage contrast measurements can be isolated from the analyser geometry dependent effect. Linearization error voltages in quantitative voltage contrast measurements arising from the individual influences of the specimen dependent and analyser geometry dependent effects are presented. The results show that the error component due to very narrow analysers dominate the total linearization error. The same situation arises when the voltage measurement point on the specimen is very near to the edge of the analyser

    Measurement of the Bottom-Strange Meson Mixing Phase in the Full CDF Data Set

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    We report a measurement of the bottom-strange meson mixing phase \beta_s using the time evolution of B0_s -> J/\psi (->\mu+\mu-) \phi (-> K+ K-) decays in which the quark-flavor content of the bottom-strange meson is identified at production. This measurement uses the full data set of proton-antiproton collisions at sqrt(s)= 1.96 TeV collected by the Collider Detector experiment at the Fermilab Tevatron, corresponding to 9.6 fb-1 of integrated luminosity. We report confidence regions in the two-dimensional space of \beta_s and the B0_s decay-width difference \Delta\Gamma_s, and measure \beta_s in [-\pi/2, -1.51] U [-0.06, 0.30] U [1.26, \pi/2] at the 68% confidence level, in agreement with the standard model expectation. Assuming the standard model value of \beta_s, we also determine \Delta\Gamma_s = 0.068 +- 0.026 (stat) +- 0.009 (syst) ps-1 and the mean B0_s lifetime, \tau_s = 1.528 +- 0.019 (stat) +- 0.009 (syst) ps, which are consistent and competitive with determinations by other experiments.Comment: 8 pages, 2 figures, Phys. Rev. Lett 109, 171802 (2012

    Characteristics of Early-Onset vs Late-Onset Colorectal Cancer: A Review.

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    The incidence of early-onset colorectal cancer (younger than 50 years) is rising globally, the reasons for which are unclear. It appears to represent a unique disease process with different clinical, pathological, and molecular characteristics compared with late-onset colorectal cancer. Data on oncological outcomes are limited, and sensitivity to conventional neoadjuvant and adjuvant therapy regimens appear to be unknown. The purpose of this review is to summarize the available literature on early-onset colorectal cancer. Within the next decade, it is estimated that 1 in 10 colon cancers and 1 in 4 rectal cancers will be diagnosed in adults younger than 50 years. Potential risk factors include a Westernized diet, obesity, antibiotic usage, and alterations in the gut microbiome. Although genetic predisposition plays a role, most cases are sporadic. The full spectrum of germline and somatic sequence variations implicated remains unknown. Younger patients typically present with descending colonic or rectal cancer, advanced disease stage, and unfavorable histopathological features. Despite being more likely to receive neoadjuvant and adjuvant therapy, patients with early-onset disease demonstrate comparable oncological outcomes with their older counterparts. The clinicopathological features, underlying molecular profiles, and drivers of early-onset colorectal cancer differ from those of late-onset disease. Standardized, age-specific preventive, screening, diagnostic, and therapeutic strategies are required to optimize outcomes

    NEW CURVE FITTING ERROR CRITERION FOR SOLAR CELL I-V CHARACTERISTICS.

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    Conference Record of the IEEE Photovoltaic Specialists Conference758-763CRCN

    Enhanced pixel by pixel emissivity correction for thermal microscopy

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    Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004451-45

    Mobile diffractive solid immersion lens design for backside laser based fault localization

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    Conference Proceedings from the International Symposium for Testing and Failure Analysis32-3

    Direct method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan: planar junction configuration

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    10.1109/16.381995IEEE Transactions on Electron Devices425963-968IETD

    Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope

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    10.1109/16.223700IEEE Transactions on Electron Devices4081417-1425IETD

    Resolution and sensitivity enhancements of scanning optical microscopy techniques for integrated circuit failure analysis

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    10.1109/IPFA.2009.5232707Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA11-1
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