Phase equilibrium diagram of Y-Cu-Sb system at 870 K

The interaction of the components in the Y-Cu-Sb ternary system was investigated using the methods of X-ray phase analysis, microstructure, and energy-dispersive X-ray spectroscopy in the whole concentration range at 870 K. At the temperature of investigation Y-Cu-Sb system is characterized by the formation of three ternary compounds: Y3Cu22Sb9 (Dy3Cu20+xSb11-x structure type, space group F-43m, a=1.6614(3) nm), Y3Cu3Sb4 (Y3Au3Sb4 structure type, space group I-43d, а = 0.95357(5) nm), YCuSb2 (HfCuSi2 structure type, space group P4/nmm, a = 0.42580(1), c = 0.98932(3) nm). The solubility of copper in the binary compound YSb (NaCl structure type) extends up to 8 at. %

Nanosized Sodium-Doped Lanthanum Manganites: Role of the Synthetic Route on their Physical Properties

In this paper we present the results of the synthesis and characterisation of nanocrystalline La1-xNaxMnO3+delta samples. Two synthetic routes were employed: polyacrylamide-based sol-gel and propellant synthesis. Pure, single phase materials were obtained with grain size around 35 nm for the sol-gel samples and around 55 nm for the propellant ones, which moreover present a more broaden grain size distribution. For both series a superparamagnetic behaviour was evidenced by means of magnetisation and EPR measurements with peculiar features ascribable to the different grain sizes and morphology. Preliminary magnetoresistivity measurements show enhanced low-field (< 1 T) magnetoresistance values which suggest an interesting applicative use of these manganites.Comment: 31 Pages 10 Figures to appear in Chem. Mate

Потрійна система Er-Cr-Ge

The isothermal section of the phase diagram of the Er–Cr–Ge ternary system was constructed at 1070 K over the whole concentration range using X-ray diffractometry, metallography and electron microprobe (EPM) analysis. The interaction between the elements in the Er−Cr−Ge system results in the formation of two ternary compounds: ErCr6Ge6 (MgFe6Ge6-type, space group P6/mmm, Pearson symbol hP13; a = 5.15149(3), c = 8.26250(7) Ǻ; RBragg = 0.0493, RF = 0.0574) and ErCr1-хGe2 (CeNiSi2-type, space group Cmcm, Pearson symbol oS16, a = 4.10271(5), b = 15.66525(17), c = 3.99017(4) Ǻ; RBragg = 0.0473, RF = 0.0433) at investigated temperature. For the ErCr1-xGe2 compound, the homogeneity region was determined (ErCr0.28-0.38Ge2; a = 4.10271(5)-4.1418(9), b = 15.6652(1)-15.7581(4), c = 3.99017(4)-3.9291(1) Ǻ).Ізотермічний переріз діаграми стану потрійної системи Er–Cr–Ge побудований за температури 1070&nbsp;K в повному концентраційному інтервалі методами рентгенофазового, рентгеноструктурного і мікроструктурного аналізів. Взаємодія компонентів у системі Er–Cr–Ge за температури дослідження характеризується утворенням двох тернарних сполук ErCr6Ge6 (структурний тип MgFe6Ge6, просторова група P6/mmm, символ Пірсона hP13; a = 5,15149(3), c = 8,26250(7) Ǻ; RBragg = 0,0493, RF = 0,0574) іErCr1-хGe2 (структурний тип CeNiSi2, просторова група Cmcm, символ Пірсона oS16, a = 4,10271(5), b = 15,6652(1), c = 3,99017(4) Ǻ; RBragg = 0,0473, RF = 0,0433). Для сполуки ErCr1-хGe2 визначена область гомогенності (ErСr0,28-0,38Ge2; a&nbsp;=&nbsp;4,10271(5)-4,1418(9), b&nbsp;=&nbsp;15,6652(1)-15,7581(4), c&nbsp;=&nbsp;3,99017(4)-3,9291(1)&nbsp;Ǻ)

Ізотермічний переріз потрійної системи Ho–Cu–Sn при 670 K

The interaction of the components in the Ho-Cu-Sn ternary system was investigated at 670 K over the whole concentration range using X-ray diffraction and EPM analyses. Four ternary compounds were formed in the Ho–Cu–Sn system at 670 K: HoCuSn (LiGaGe type, space group P63mc), Ho3Cu4Sn4 (Gd3Cu4Ge4-type, space group Immm), HoCu5Sn (CeCu5Au-type, space group Pnma), and Ho1.9Cu9.2Sn2.8 (Dy1.9Cu9.2Sn2.8-type, space group P63/mmc). The formation of the interstitial solid solution based on HoSn2 (ZrSi2-type) binary compound up to 5 at. % Cu was found.Взаємодія компонентів у потрійній системі Ho-Cu-Sn досліджена за температури 670 K в повномуконцентраційному інтервалі методами рентгенівської дифракції і рентгеноспектрального аналізу. При 670K в системі утворюються чотири тернарні сполуки: HoCuSn (структурний тип LiGaGe, просторова групаP63mc), Ho3Cu4Sn4 (структурний тип Gd3Cu4Ge4, просторова група Immm), HoCu5Sn (структурний типCeCu5Au, просторова група Pnma) і Ho1.9Cu9.2Sn2.8 (структурний тип Dy1.9Cu9.2Sn2.8, просторова групаP63/mmc). Встановлено утворення твердого розчину включення на основі бінарної сполуки HoSn2(структурний тип ZrSi2) до вмісту 5 aт. % Cu

Дослідження структурних, кінетичних та енергетичних властивостей напівпровідникового твердого розчину Zr1-xVxNiSn

Structural, electrokinetic and energy state characteristics of the Zr1-xVxNiSn semiconductive solid solution (х=0–0.10) were investigated in the temperature interval 80–400 К. It was shown that doping of the ZrNiSn compound by V atoms (rV=0.134 nm) due to substitution of Zr (rZr=0.160 nm) results in increase of lattice parameter&nbsp;а(х) of Zr1-xVxNiSn indicating unforecast structural change. Based on analysis of the motion rate of the Fermi level ΔεF/Δх&nbsp;for Zr1-xVxNiSn in direction of the conduction band it was concluded about simultaneous generation of the structural defects of the donor and acceptor nature (donor-acceptor pairs) by unknown mechanism and creation of the corresponding energy levels in the band gap of the semiconductor.Досліджено особливості структурних, кінетичних та енергетичних характеристик напівпровідникового твердого розчину Zr1-xVxNiSn (х=0–0.10) в інтервалі температур 80–400 К. Показано, що уведення атомів V (rV=0.134 нм) у структуру сполуки ZrNiSn шляхом заміщення Zr (rZr=0.160 нм) супроводжується неочікуваним збільшенням значень періоду елементарної комірки&nbsp;а(х) Zr1-xVxNiSn, вказуючи на непрогнозовані структурні зміни. На основі аналізу швидкості руху рівня Фермі ΔεF/Δх&nbsp;Zr1-xVxNiSn у напрямі зони провідності зроблено висновок про одночасне генерування у кристалі структурних дефектів донорної та акцепторної природи (донорно-акцепторні пари) за невідомим механізмом, які породжують відповідні енергетичні рівні у забороненій зоні напівпровідник

Peculiarities of structural, electrokinetic, energetic, and magnetic properties semiconductive solid solution Lu1-xVxNiSb

The structural, electrokinetic, energetic, and magnetic properties of the new semiconductive solid solution Lu1-xVxNiSb, х=0–0.10, were studied. It was shown that V atoms could simultaneously occupy different crystallographic positions in different ratios, generating structural defects of acceptor and donor nature. This creates corresponding acceptor and donor bands in the bandgap εg of Lu1-xVxNiSb. The mechanism of the formation of two acceptor bands with different depths of occurrence has been established: a small acceptor band εА2, formed by defects due to the substitution of Ni atoms by V ones in the 4c position, and band εА1, generated by vacancies in the LuNiSb structure. The ratio of the concentrations of generated defects determines the position of the Fermi level εF and the conduction mechanisms. The investigated solid solution Lu1-xVxNiSb is a promising thermoelectric material

Measurement of the cross-section and charge asymmetry of WW bosons produced in proton-proton collisions at s=8\sqrt{s}=8 TeV with the ATLAS detector

This paper presents measurements of the $W^+ \rightarrow \mu^+\nu$ and $W^- \rightarrow \mu^-\nu$ cross-sections and the associated charge asymmetry as a function of the absolute pseudorapidity of the decay muon. The data were collected in proton--proton collisions at a centre-of-mass energy of 8 TeV with the ATLAS experiment at the LHC and correspond to a total integrated luminosity of 20.2~\mbox{fb^{-1}}. The precision of the cross-section measurements varies between 0.8% to 1.5% as a function of the pseudorapidity, excluding the 1.9% uncertainty on the integrated luminosity. The charge asymmetry is measured with an uncertainty between 0.002 and 0.003. The results are compared with predictions based on next-to-next-to-leading-order calculations with various parton distribution functions and have the sensitivity to discriminate between them.Comment: 38 pages in total, author list starting page 22, 5 figures, 4 tables, submitted to EPJC. All figures including auxiliary figures are available at https://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PAPERS/STDM-2017-13

Search for chargino-neutralino production with mass splittings near the electroweak scale in three-lepton final states in √s=13 TeV pp collisions with the ATLAS detector

A search for supersymmetry through the pair production of electroweakinos with mass splittings near the electroweak scale and decaying via on-shell W and Z bosons is presented for a three-lepton final state. The analyzed proton-proton collision data taken at a center-of-mass energy of √s=13  TeV were collected between 2015 and 2018 by the ATLAS experiment at the Large Hadron Collider, corresponding to an integrated luminosity of 139  fb−1. A search, emulating the recursive jigsaw reconstruction technique with easily reproducible laboratory-frame variables, is performed. The two excesses observed in the 2015–2016 data recursive jigsaw analysis in the low-mass three-lepton phase space are reproduced. Results with the full data set are in agreement with the Standard Model expectations. They are interpreted to set exclusion limits at the 95% confidence level on simplified models of chargino-neutralino pair production for masses up to 345 GeV

Search for new phenomena in final states with an energetic jet and large missing transverse momentum in pp collisions at √ s = 8 TeV with the ATLAS detector

Results of a search for new phenomena in final states with an energetic jet and large missing transverse momentum are reported. The search uses 20.3 fb−1 of √ s = 8 TeV data collected in 2012 with the ATLAS detector at the LHC. Events are required to have at least one jet with pT > 120 GeV and no leptons. Nine signal regions are considered with increasing missing transverse momentum requirements between Emiss T > 150 GeV and Emiss T > 700 GeV. Good agreement is observed between the number of events in data and Standard Model expectations. The results are translated into exclusion limits on models with either large extra spatial dimensions, pair production of weakly interacting dark matter candidates, or production of very light gravitinos in a gauge-mediated supersymmetric model. In addition, limits on the production of an invisibly decaying Higgs-like boson leading to similar topologies in the final state are presente

Selection of the silicon sensor thickness for the Phase-2 upgrade of the CMS Outer Tracker

During the operation of the CMS experiment at the High-Luminosity LHC the silicon sensors of the Phase-2 Outer Tracker will be exposed to radiation levels that could potentially deteriorate their performance. Previous studies had determined that planar float zone silicon with n-doped strips on a p-doped substrate was preferred over p-doped strips on an n-doped substrate. The last step in evaluating the optimal design for the mass production of about 200 m$^{2}$ of silicon sensors was to compare sensors of baseline thickness (about 300 μm) to thinned sensors (about 240 μm), which promised several benefits at high radiation levels because of the higher electric fields at the same bias voltage. This study provides a direct comparison of these two thicknesses in terms of sensor characteristics as well as charge collection and hit efficiency for fluences up to 1.5 × 10$^{15}$ n$_{eq}$/cm$^{2}$. The measurement results demonstrate that sensors with about 300 μm thickness will ensure excellent tracking performance even at the highest considered fluence levels expected for the Phase-2 Outer Tracker