61 research outputs found
The Influence of Manga on the Graphic Novel
This material has been published in The Cambridge History of the Graphic Novel edited by Jan Baetens, Hugo Frey, Stephen E. Tabachnick. This version is free to view and download for personal use only. Not for re-distribution, re-sale or use in derivative works. © Cambridge University PressProviding a range of cogent examples, this chapter describes the influences of the Manga genre of comics strip on the Graphic Novel genre, over the last 35 years, considering the functions of domestication, foreignisation and transmedia on readers, markets and forms
Influence of the partial pressure of GaCl3 in the growth process of GaN by HVPE under nitrogen
Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE
Kinetic Modelling Of The Selective Epitaxy Of GaAs On Patterned Substrates By Hvpe. Application to the Conformal Growth Of Low Defect Density GaAs Layers On Silicon
AbstractThe selective growth of GaAs by HVPE was studied on (001), (110), (111)Ga and (111)As, GaAs patterned substrates by varying the I1I/V ratio. A kinetic modelling of the growth was developed, based upon the SEM observations of the growth morphologies as well as on experimental curve synthesis. The growth rate is written as a function of the diffusion fluxes of the adsorbed AsGa and AsGaCI molecules and takes into account the chlorine desorption by H2. 1.5 μm thick GaAs films were then fabricated on Si (001) by a confined epitaxial lateral overgrowth technique. These conformal films exhibit intense and uniform luminescence signals, showing that the dislocation densities of GaAs are lower than 105 cm−2. SEM analyses reveal that conformal growth fronts consist in (110) and (111)As A planes under the III/V ratios (superior to 1) which were tested.</jats:p
Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies
Fabrication de cristaux photoniques par croissance cristalline anisotrope par la méthode aux hydrures
2 pagesInternational audienc
Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Demonstration of crystal–vapor equilibrium leading to growth blockade of GaN during selective area growth
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