Chemical markers for rumen methanogens and methanogenesis

Peer reviewedPublisher PD

Compositional tuning of ferromagnetism in Ga1-xMnxP

We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.Comment: To be published in Solid State Communication

Revealing Nanoscale Chemical Heterogeneities in Polycrystalline Mo-BiVO4 Thin Films

Indexación: Scopus.The activity of polycrystalline thin film photoelectrodes is impacted by local variations of the material properties due to the exposure of different crystal facets and the presence of grain/domain boundaries. Here a multi-modal approach is applied to correlate nanoscale heterogeneities in chemical composition and electronic structure with nanoscale morphology in polycrystalline Mo-BiVO4. By using scanning transmission X-ray microscopy, the characteristic structure of polycrystalline film is used to disentangle the different X-ray absorption spectra corresponding to grain centers and grain boundaries. Comparing both spectra reveals phase segregation of V2O5 at grain boundaries of Mo-BiVO4 thin films, which is further supported by X-ray photoelectron spectroscopy and many-body density functional theory calculations. Theoretical calculations also enable to predict the X-ray absorption spectral fingerprint of polarons in Mo-BiVO4. After photo-electrochemical operation, the degraded Mo-BiVO4 films show similar grain center and grain boundary spectra indicating V2O5 dissolution in the course of the reaction. Overall, these findings provide valuable insights into the degradation mechanism and the impact of material heterogeneities on the material performance and stability of polycrystalline photoelectrodes. © 2020 The Authors. Published by Wiley-VCH GmbHhttps://onlinelibrary-wiley-com.recursosbiblioteca.unab.cl/doi/10.1002/smll.20200160

Measurement of the mass difference between top quark and antiquark in pp collisions at root s=8 TeV

Peer reviewe

Spatially Modulated Silicon Interface Energetics Via Hydrogen Plasma Assisted Atomic Layer Deposition of Ultrathin Alumina

Atomic layer deposition ALD is a key technique for the continued scaling of semiconductor devices, which increasingly relies on scalable processes for interface manipulation of structured surfaces on the atomic level. While ALD allows the synthesis of conformal films with utmost control over the thickness, atomically defined closed coatings and surface modifications are challenging to achieve because of 3D growth during nucleation. Here, a route is presented toward the sub nanometer thin and continuous aluminum oxide AlOx coatings on silicon substrates for the spatial control of the surface charge density and interface energetics. Trimethylaluminum in combination with remote hydrogen plasma is used instead of a gas phase oxidant for the transformation of silicon dioxide SiO2 into alumina. Depending on the number of ALD cycles, the SiO2 can be partially or fully transformed, which is exploited to deposit ultrathin AlOx layers in selected regions defined by lithographic patterning. The resulting patterned surfaces are characterized by lateral AlOx SiO2 interfaces possessing 0.3 nm step heights and surface potential steps exceeding 0.4 V. In addition, the introduction of fixed negative charges of 9 1012 cm amp; 8722;2 enables modulation of the surface band bending, which is relevant to the field effect passivation of silicon and low impedance charge transfer across contact interface

Measurements of the ϒ(1S), ϒ(2S), and ϒ(3S) differential cross sections in pp collisions at s=7TeV

Differential cross sections as a function of transverse momentum pTpT are presented for the production of ϒ(nS)ϒ(nS) (n = 1, 2, 3) states decaying into a pair of muons. Data corresponding to an integrated luminosity of 4.9View the MathML sourcefb−1 in pp collisions at View the MathML sources=7TeV were collected with the CMS detector at the LHC. The analysis selects events with dimuon rapidity |y|<1.2|y|<1.2 and dimuon transverse momentum in the range View the MathML source10<pT<100GeV. The measurements show a transition from an exponential to a power-law behavior at View the MathML sourcepT≈20GeV for the three ϒ states. Above that transition, the ϒ(3S)ϒ(3S) spectrum is significantly harder than that of the ϒ(1S)ϒ(1S). The ratios of the ϒ(3S)ϒ(3S) and ϒ(2S)ϒ(2S) differential cross sections to the ϒ(1S)ϒ(1S) cross section show a rise as pTpT increases at low pTpT, then become flatter at higher pTpT

Search for W ' -> tb in proton-proton collisions at root s=8 TeV

Peer reviewe

Search for stealth supersymmetry in events with jets, either photons or leptons, and low missing transverse momentum in pp collisions at 8 TeV

The results of a search for new physics in final states with jets, either photons or leptons, and low missing transverse momentum are reported. The study is based on a sample of proton-proton collisions collected at a center-of-mass energy s=8 TeV with the CMS detector in 2012. The integrated luminosity of the sample is 19.7 fb-1. Many models of new physics predict the production of events with jets, electroweak gauge bosons, and little or no missing transverse momentum. Examples include stealth models of supersymmetry (SUSY), which predict a hidden sector at the electroweak energy scale in which SUSY is approximately conserved. The data are used to search for stealth SUSY signatures in final states with either two photons or an oppositely charged electron and muon. No excess is observed with respect to the standard model expectation, and the results are used to set limits on squark pair production in the stealth SUSY framework

Measurement of the t-channel single-top-quark production cross section and of the |Vtb| CKM matrix element in pp collisions at SQR = 8 TeV

Measurements are presented of the t -channel single-top-quark production cross section in proton-proton collisions at s&#8730; = 8 TeV. The results are based on a data sample corresponding to an integrated luminosity of 19.7 fb &#8722;1 recorded with the CMS detector at the LHC. The cross section is measured inclusively, as well as separately for top (t) and antitop (t¯) , in final states with a muon or an electron. The measured inclusive t -channel cross section is &#963; t -ch. = 83 . 6 ± 2 . 3 (stat.) ± 7 . 4 (syst.) pb. The single t and t¯ cross sections are measured to be &#963; t -ch. ( t ) = 53 . 8 ± 1 . 5 (stat.) ± 4 . 4 (syst.) pb and &#963; t -ch. (t¯) = 27 . 6 ± 1 . 3 (stat.) ± 3 . 7 (syst.) pb, respectively. The measured ratio of cross sections is R t -ch. = &#963; t -ch. (t) /&#963; t -ch. (t¯) = 1 . 95 ± 0 . 10 (stat.) ± 0 . 19 (syst.), in agreement with the standard model prediction. The modulus of the Cabibbo-Kobayashi-Maskawa matrix element V tb is extracted and, in combination with a previous CMS result at s&#8730; = 7 TeV, a value | V tb | = 0 . 998 ± 0 . 038 (exp.) ± 0 . 016 (theo.) is obtained