Spin order manipulations in nanostructures of II-VI ferromagnetic semiconductors

An overview of recent studies on ferromagnetism in Cr- and Mn-based II-VI diluted magnetic semiconductors is presented emphasizing differences in underlying exchange mechanisms. Examples of manipulations with spin ordering by carrier density, dimensionality, light, and electric field are given.Comment: 6 pages, 7 figures, Proceedings International Conference on Magnetism, Rome 2003, J. Magn. Magn. Mater., in pres

Hans Sachs’ Tristrant : farce, tragedy or serious doctrine?

When at the end of Hans Sachs' tragedy of Tristrant, dated February 7th, 1553, the herold takes the floor, he calls to the audience to recognize that this is a tragedy, Auß der wird offentlich erkendt, Wie solche unorndliche lieb Hat so ein starck mechtigen trieb, Wo sie einnimbt ein junges hertz Mit bitter angst, senenden schmertz, Darinn sie also heftig wüt, Verkert hertz, sin, vernunft und gmüt, Wird leichtfertig, verwegen gantz, Schlecht seel, lieb, ehr, gut in die schantz, Acht fürbas weder sitten noch tugent, (184,32-185,3) (1) ...

III-V and II-VI Mn-based Ferromagnetic Semiconductors

A review is given of advances in the field of carrier-controlled ferromagnetism in Mn-based diluted magnetic semiconductors and their nanostructures. Experimental results for III-V materials, where the Mn atoms introduce both spins and holes, are compared to the case of II-VI compounds, in which the Curie temperatures T_C above 1 K have been observed for the uniformly and modulation-doped p-type structures but not in the case of n-type films. The experiments demonstrating the tunability of T_C by light and electric field are presented. The tailoring of domain structures and magnetic anisotropy by strain engineering and confinement is discussed emphasizing the role of the spin-orbit coupling in the valence band. The question of designing modulated magnetic structures in low dimensional semiconductor systems is addressed. Recent progress in search for semiconductors with T_C above room temperature is presented.Comment: 8 pages, 9 figures, Spring Meeting of the German Physical Society, March 2003, Advances in Solid State Physic

Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides

The author reviews the present understanding of the hole-mediated ferromagnetism in magnetically doped semiconductors and oxides as well as the origin of high temperature ferromagnetism in materials containing no valence band holes. It is argued that in these systems spinodal decomposition into regions with a large and a small concentration of magnetic component takes place. This self-organized assembling of magnetic nanocrystals can be controlled by co-doping and growth conditions. Functionalities of these multicomponent systems are described together with prospects for their applications in spintronics, nanoelectronics, photonics, plasmonics, and thermoelectrics.Comment: review, 7 pages, 52nd MMM Conference, Tampa Nov. 2007, J. Appl. Phys, in pres

Refining of metallurgical-grade silicon

A basic requirement of large scale solar cell fabrication is to provide low cost base material. Unconventional refining of metallurical grade silicon represents one of the most promising ways of silicon meltstock processing. The refining concept is based on an optimized combination of metallurgical treatments. Commercially available crude silicon, in this sequence, requires a first pyrometallurgical step by slagging, or, alternatively, solvent extraction by aluminum. After grinding and leaching, high purity qualtiy is gained as an advanced stage of refinement. To reach solar grade quality a final pyrometallurgical step is needed: liquid-gas extraction

Interlayer exchange coupling in (Ga,Mn)As based multilayers

Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.Comment: 4 pages, 2 figures. To be published in physica status solidi c as the proceedings of the PASPS IV conferenc

Magnitude and crystalline anisotropy of hole magnetization in (Ga,Mn)As

Theory of hole magnetization Mc in zinc-blende diluted ferromagnetic semiconductors is developed relaxing the spherical approximation of earlier approaches. The theory is employed to determine Mc for (Ga,Mn)As over a wide range of hole concentrations and a number of crystallographic orientations of Mn magnetization. It is found that anisotropy of Mc is practically negligible but the obtained magnitude of Mc is significantly greater than that determined in the spherical approximation. Its sign and value compares favorably with the results of available magnetization measurements and ferromagnetic resonance studies.Comment: 5 pages, 3 figure