Shear-Enhanced Transfer Printing of Conducting Polymer Thin Films

Polymer conductors that are solution-processable provide an opportunity to realize low-cost organic electronics. However, coating sequential layers can be hindered by poor surface wetting or dissolution of underlying layers. This has led to the use of transfer printing where solid film inks are transferred from a donor substrate to partially fabricated devices using a stamp. This approach typically requires favorable adhesion differences between the stamp, ink, and receiving substrate. Here, we present a shear-assisted organic printing (SHARP) technique that employs a shear load on a post-less polydimethylsiloxane (PDMS) elastomer stamp to print large-area polymer films that can overcome large unfavorable adhesion differences between the stamp and receiving substrate. We explore the limits of this process by transfer printing poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) films with varied formulation that tune the adhesive fracture energy. Using this platform, we show that the SHARP process is able to overcome a 10-fold unfavorable adhesion differential without the use of a patterned PDMS stamp, enabling large-area printing. The SHARP approach is then used to print PEDOT:PSS films in the fabrication of high-performance semitransparent organic solar cells

p-wave phase shift and scattering length of 6^6Li

We have calculated the p-wave phase shifts and scattering length of $^6$Li. For this we solve the $p$ partial wave Schr\"odinger equation and analyze the validity of adopting the semiclassical solution to evaluate the constant factors in the solution. Unlike in the $s$ wave case, the semiclassical solution does not provide unique value of the constants. We suggest an approximate analytic solution, which provides reliable results in special cases. Further more, we also use the variable phase method to evaluate the phase shifts. The p-wave scattering lengths of $^{132}$Cs and $^{134}$Cs are calculated to validate the schemes followed. Based on our calculations, the value of the $p$ wave scattering length of $^6$Li is $-45a_o$.Comment: 10 figure

Measurement of Mass and Width of the W Boson at LEP

We report on measurements of the mass and total decay width of the W boson with the L3 detector at LEP. W-pair events produced in $\mathrm{e^+e^-}$ interactions between 161 GeV and 183 GeV centre-of-mass energy are selected in a data sample corresponding to a total luminosity of 76.7 pb$^{-1}$. Combining all final states in W-pair production, the mass and total decay width of the W boson are determined to be $\mathrm{M_W}=80.61\pm0.15$ GeV and $\Gamma_{\mathrm{W}}=1.97\pm0.38$ GeV, respectively

Search for Heavy Neutral and Charged Leptons in e+^+e−^- Annihilation at s\sqrt{s} = 183 and 189 GeV

A search for unstable neutral and charged heavy leptons as well as for stable charged heavy leptons is performed at center-of-mass energies $\sqrt{s}$ = 183 and 189 GeV with the L3 detector at LEP. No evidence for their existence is found. We exclude neutral heavy leptons which couple to the electron, muon or tau family, of the Dirac type for masses below 92.4, 93.3 and 83.3 GeV, and of the Majorana type for masses below 81.8, 84.1 and 73.5 GeV, respectively. We exclude unstable charged heavy leptons for masses below 93.9 GeV for a wide range of the associated neutral heavy lepton mass. If the unstable charged heavy lepton decays to a light neutrino, we exclude masses below 92.4 GeV. The production of stable charged heavy leptons with mass less than 93.5 GeV is also excluded

Measurement of an Elongation of the Pion Source in Z Decays

We measure Bose-Einstein correlations between like-sign charged pion pairs in hadronic Z decays with the L3 detector at LEP. The analysis is performed in three dimensions in the longitudinal center-of-mass system. The pion source is found to be elongated along the thrust axis with a ratio of transverse to longitudinal radius of $0.81\pm 0.02 ^{+0.03}_{-0.19}$

Integrating sequence and array data to create an improved 1000 Genomes Project haplotype reference panel

A major use of the 1000 Genomes Project (1000GP) data is genotype imputation in genome-wide association studies (GWAS). Here we develop a method to estimate haplotypes from low-coverage sequencing data that can take advantage of single-nucleotide polymorphism (SNP) microarray genotypes on the same samples. First the SNP array data are phased to build a backbone (or 'scaffold') of haplotypes across each chromosome. We then phase the sequence data 'onto' this haplotype scaffold. This approach can take advantage of relatedness between sequenced and non-sequenced samples to improve accuracy. We use this method to create a new 1000GP haplotype reference set for use by the human genetic community. Using a set of validation genotypes at SNP and bi-allelic indels we show that these haplotypes have lower genotype discordance and improved imputation performance into downstream GWAS samples, especially at low-frequency variants. © 2014 Macmillan Publishers Limited. All rights reserved

Search for leptophobic Z ' bosons decaying into four-lepton final states in proton-proton collisions at root s=8 TeV

Peer reviewe

Search for black holes and other new phenomena in high-multiplicity final states in proton-proton collisions at root s=13 TeV

Peer reviewe