Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07≤x≤0.21) by means of a detailed charge balance equation

This paper discusses the determination of key electrical parameters of AlInN/(AlN)/GaN heterostructures from capacitance-voltage (CV) measurements. These heterostructures gained recently importance since they allow for high electron mobility transistor (HEMT) devices with several remarkable records: densities of the 2D electron gas (2DEG) of 2.6×1013 cm−2 for lattice-matched (LM) heterostructures and barrier thickness of 14nm, beyond 2 A/mm saturation currents, above 100GHz operation for heterostructures grown on Si (111) with gate length of 0.1µm. Despite these striking experimental results, a consistent determination of the most important electrical parameters, namely polarization sheet charge density, surface potential, and dielectric constant of the alloy are still missing. By setting up the correct charge balance equation, these parameters can unambiguously be determined. For instance, in the case of nearly LM Al0.85In0.15N these parameters amount to σAl0.85In0.15N/GaN~3.7×1017 m−2, eΦS~3 eV and Al0.85In0.15N ~11.2, for the charge density, the surface barrier potential, and the dielectric constant, respectivel

American Military Culture and Civil-Military Relations Today

We demonstrate a standard-free method to retrieve compositional information in AlxIn1-xN thin films by measuring the bulk plasmon energy (E-p), employing electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). Two series of samples were grown by magnetron sputter epitaxy (MSE) and metal organic vapor phase epitaxy (MOVPE), which together cover the full compositional range 0 <= x <= 1. Complementary compositional measurements were obtained using Rutherford backscattering spectroscopy (RBS) and the lattice parameters were obtained by X-ray diffraction (XRD). It is shown that E-p follows a linear relation with respect to composition and lattice parameter between the alloying elements from AlN to InN allowing for straightforward compositional analysis. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

High-temperature Mott transition in wide-band-gap semiconductor quantum wells

The crossover from an exciton gas to an electron-hole plasma is studied in a GaN/(Al,Ga)N single quantum well by means of combined time-resolved and continuous-wave photoluminescence measurements. The two-dimensional Mott transition is found to be of continuous type and to be accompanied by a characteristic modification of the quantum well emission spectrum. Beyond the critical density, the latter is strongly influenced by band-gap renormalization and Fermi filling of continuum states. Owing to the large binding energy of excitons in III-nitride heterostructures, their injection-induced dissociation could be tracked over a wide range of temperatures, i.e., from 4 to 150K. Various criteria defining the Mott transition are examined, which, however, do not lead to any clear trend with rising temperature: the critical carrier density remains invariant around 1012cm−2

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. In this paper we analyze the impact of the defects on the electrical characteristics of LEDs: we analyze three single-quantum-well (SQW) InGaN/GaN LED wafers, which differ in the density of defects. Through steady-state photocapacitance (SSPC) and light-capacitance-voltage measurements, the energy levels of these deep defects and their concentrations have been estimated. By means of a simulation campaign, we show that these defects have a fundamental impact on the current voltage characteristic of LEDs, especially in the sub turn-on region. The model adopted takes into consideration trap assisted tunneling as the main mechanism responsible for current leakage in forward bias. For the first time, we use in simulations the defect parameters (concentration, energy) extracted from SSPC. In this way, we can reproduce with great accuracy the current-voltage characteristics of InGaN LEDs in a wide current range (from pA to mA). In addition, based on SSPC measurements, we demonstrate that the defect density in the active region scales with the QW thickness. This supports the hypothesis that defects are incorporated in In-containing layers, consistently with recent publications

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices

Optimasi Portofolio Resiko Menggunakan Model Markowitz MVO Dikaitkan dengan Keterbatasan Manusia dalam Memprediksi Masa Depan dalam Perspektif Al-Qur`an

Risk portfolio on modern finance has become increasingly technical, requiring the use of sophisticated mathematical tools in both research and practice. Since companies cannot insure themselves completely against risk, as human incompetence in predicting the future precisely that written in Al-Quran surah Luqman verse 34, they have to manage it to yield an optimal portfolio. The objective here is to minimize the variance among all portfolios, or alternatively, to maximize expected return among all portfolios that has at least a certain expected return. Furthermore, this study focuses on optimizing risk portfolio so called Markowitz MVO (Mean-Variance Optimization). Some theoretical frameworks for analysis are arithmetic mean, geometric mean, variance, covariance, linear programming, and quadratic programming. Moreover, finding a minimum variance portfolio produces a convex quadratic programming, that is minimizing the objective function ðð¥with constraintsð ð 𥠥 ðandð´ð¥ = ð. The outcome of this research is the solution of optimal risk portofolio in some investments that could be finished smoothly using MATLAB R2007b software together with its graphic analysis

Search for heavy resonances decaying to two Higgs bosons in final states containing four b quarks

A search is presented for narrow heavy resonances X decaying into pairs of Higgs bosons (H) in proton-proton collisions collected by the CMS experiment at the LHC at root s = 8 TeV. The data correspond to an integrated luminosity of 19.7 fb(-1). The search considers HH resonances with masses between 1 and 3 TeV, having final states of two b quark pairs. Each Higgs boson is produced with large momentum, and the hadronization products of the pair of b quarks can usually be reconstructed as single large jets. The background from multijet and t (t) over bar events is significantly reduced by applying requirements related to the flavor of the jet, its mass, and its substructure. The signal would be identified as a peak on top of the dijet invariant mass spectrum of the remaining background events. No evidence is observed for such a signal. Upper limits obtained at 95 confidence level for the product of the production cross section and branching fraction sigma(gg -> X) B(X -> HH -> b (b) over barb (b) over bar) range from 10 to 1.5 fb for the mass of X from 1.15 to 2.0 TeV, significantly extending previous searches. For a warped extra dimension theory with amass scale Lambda(R) = 1 TeV, the data exclude radion scalar masses between 1.15 and 1.55 TeV

Search for supersymmetry in events with one lepton and multiple jets in proton-proton collisions at root s=13 TeV

Peer reviewe

Measurement of the top quark mass using charged particles in pp collisions at root s=8 TeV

Peer reviewe