Local Multiplicity Fluctuations as a Signature of Critical Hadronization at LHC

In central Pb-Pb collisions at LHC the multiplicity of particles produced is so high that it should become feasible to examine the nature of transition from the deconfined quark-gluon state to the confined hadron state by methods that rely on the availability of high multiplicity events. We consider four classes of the transition process ranging from critical behavior to totally random behavior, depending on whether or not there is clustering of quarks and on whether or not there is contraction of dense clusters due to confinement. Fluctuations of bin multiplicities in each event are quantified, and then the event-by-event fluctuations of spatial patterns are analyzed. A sequence of measures are proposed and are shown to be effective in capturing the essence of the differences among the classes of simulated events. It is demonstrated that a specific index has a low value for critical transition but a larger value if the hadronization process is random.Comment: 11 pages in RevTeX4 with 9 figure

Two-particle BoseEinstein correlations in pp collisions at √s = 0.9 and 7 TeV measured with the ATLAS detector

The paper presents studies of Bose–Einstein Correlations (BEC) for pairs of like-sign charged particles measured in the kinematic range pT > 100 MeV and |η| <2.5 in proton–proton collisions at centre-of-mass energies of 0.9 and 7 TeV with the ATLAS detector at the CERN Large Hadron Collider. The integrated luminosities are approximately 7 μb−1, 190 μb−1 and 12.4 nb-1 for 0.9 TeV,7 TeV minimum-bias and 7 TeV high-multiplicity data samples, respectively. The multiplicity dependence of the BEC parameters characterizing the correlation strength and the correlation source size are investigated for charged-particle multiplicities of up to 240. A saturation effect in the multiplicity dependence of the correlation source size parameter is observed using the high-multiplicity 7 TeV data sample. The dependence of the BEC parameters on the average transverse momentum of the particle pair is also investigated

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure