18 research outputs found
Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films
In this work, we analyze the influence of the processing pressure and the substrate–target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature—an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target–substrate distance as it was varied in between 30 and 70 mm
Use of palmae wax hydrocarbon fractions as chemotaxonomical markers in Butia and Syagrus
Multi-messenger observations of a binary neutron star merger
On 2017 August 17 a binary neutron star coalescence candidate (later designated GW170817) with merger time 12:41:04 UTC was observed through gravitational waves by the Advanced LIGO and Advanced Virgo detectors. The Fermi Gamma-ray Burst Monitor independently detected a gamma-ray burst (GRB 170817A) with a time delay of ~1.7 s with respect to the merger time. From the gravitational-wave signal, the source was initially localized to a sky region of 31 deg2 at a luminosity distance of 40+8-8 Mpc and with component masses consistent with neutron stars. The component masses were later measured to be in the range 0.86 to 2.26 Mo. An extensive observing campaign was launched across the electromagnetic spectrum leading to the discovery of a bright optical transient (SSS17a, now with the IAU identification of AT 2017gfo) in NGC 4993 (at ~40 Mpc) less than 11 hours after the merger by the One- Meter, Two Hemisphere (1M2H) team using the 1 m Swope Telescope. The optical transient was independently detected by multiple teams within an hour. Subsequent observations targeted the object and its environment. Early ultraviolet observations revealed a blue transient that faded within 48 hours. Optical and infrared observations showed a redward evolution over ~10 days. Following early non-detections, X-ray and radio emission were discovered at the transient’s position ~9 and ~16 days, respectively, after the merger. Both the X-ray and radio emission likely arise from a physical process that is distinct from the one that generates the UV/optical/near-infrared emission. No ultra-high-energy gamma-rays and no neutrino candidates consistent with the source were found in follow-up searches. These observations support the hypothesis that GW170817 was produced by the merger of two neutron stars in NGC4993 followed by a short gamma-ray burst (GRB 170817A) and a kilonova/macronova powered by the radioactive decay of r-process nuclei synthesized in the ejecta
Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide
Discrete microfluidics based on aluminum nitride surface acoustic wave devices
To date, most surface acoustic wave (SAW) devices have been made from bulk piezoelectric materials, such as quartz, lithium niobate or lithium tantalite. These bulk materials are brittle, less easily integrated with electronics for control and signal processing, and difficult to realize multiple wave modes or apply complex electrode designs. Using thin film SAWs makes it convenient to integrate microelectronics and multiple sensing or microfluidics techniques into a lab-on-a-chip with low cost and multi-functions on various substrates (silicon, glass or polymer). In the work, aluminum nitride (AlN)-based SAW devices were fabricated and characterized for discrete microfluidic (or droplet based) applications. AlN films with a highly c-axis texture were deposited on silicon substrates using a magnetron sputtering system. The fabricated AlN/Si SAW devices had a Rayleigh wave mode at a frequency of 80.3 MHz (with an electromechanical coupling coefficient k2 of 0.24 % and phase velocity vp of 5,139 m/s) and a higher-frequency-guided wave mode at 157.3 MHz (with a k2 value of 0.22 % and vp of 10,067 m/s). Both modes present a large out of band rejection of ~15 dB and were successfully applied for microfluidic manipulation of liquid droplets, including internal streaming, pumping and jetting/nebulization, and their performance differences for microfluidic functions were discussed. A detailed investigation of the influences of droplet size (ranging from 3 to 15 μL) and RF input power (0.25–68 W) on microdroplet behavior has been conducted. Results showed that pumping and jetting velocities were increased with an increase of RF power or a decrease in droplet size