Chemical Modification of Semiconductor Surfaces by Means of Nanometric Cellulose Films

Cellulose films of nanometric thickness were produced by spin-coating on GaAs(100). Films were deposited using cellulose silylated solutions and subsequently regenerated by exposing them to vapors of hydrochloric acid. After regeneration, these films can strongly resist solvents. Modification of the film surface region was performed by immersing the regenerated cellulose films in a solution of phenyl isocyanate in dimethyl sulfoxide. A different functionalization was also successfully achieved through the interaction of the film surface with 4,4′-methylenebis(phenyl isocyanate) (MDI). Surfaces treated with MDI keep an unreacted isocyanate group and can again be modified by amines. For this purpose, 4-bromoaniline was used. All kinetics of the different molecular interactions with the cellulose film on GaAs were followed in situ using FTIRS in ATR/MIR (attenuated total reflection in multiple internal reflections) mode. Besides ATR/MIR having an analysis depth on the order of 1 µm, other surface techniques were used for analyzing these films with other probing depths such as X-ray photoelectron spectroscopy with ∼10 nm and high-resolution electron energy loss spectroscopy with ∼1 nm in the impact regime. The set of methods presented here represents a quite adequate way to study the surface chemistry of cellulose films and the procedures for their functionalization

Human gut symbiont Roseburia hominis promotes and regulates innate immunity

© 2017 Patterson, Mulder, Travis, Lan, Cerf-Bensussan, Gaboriau-Routhiau, Garden, Logan, Delday, Coutts, Monnais, Ferraria, Inoue, Grant and Aminov. Objective: Roseburia hominis is a flagellated gut anaerobic bacterium belonging to the Lachnospiraceae family within the Firmicutes phylum. A significant decrease of R. hominis colonization in the gut of ulcerative colitis patients has recently been demonstrated. In this work, we have investigated the mechanisms of R. hominis-host cross talk using both murine and in vitro models. Design: The complete genome sequence of R. hominis A2-183 was determined. C3H/HeN germ-free mice were mono-colonized with R. hominis, and the host-microbe interaction was studied using histology, transcriptome analyses and FACS. Further investigations were performed in vitro and using the TLR5KO and DSS-colitis murine models. Results: In the bacterium, R. hominis, host gut colonization upregulated genes involved in conjugation/mobilization, metabolism, motility, and chemotaxis. In the host cells, bacterial colonization upregulated genes related to antimicrobial peptides, gut barrier function, toll-like receptors (TLR) signaling, and T cell biology. CD4 + CD25 + FoxP3 + T cell numbers increased in the lamina propria of both mono-associated and conventional mice treated with R. hominis. Treatment with the R. hominis bacterium provided protection against DSS-induced colitis. The role of flagellin in host-bacterium interaction was also investigated. Conclusion: Mono-association of mice with R. hominis bacteria results in specific bidirectional gene expression patterns. A set of genes thought to be important for host colonization are induced in R. hominis, while the host cells respond by strengthening gut barrier function and enhancing Treg population expansion, possibly via TLR5-flagellin signaling. Our data reveal the immunomodulatory properties of R. hominis that could be useful for the control and treatment of gut inflammation

Measurement of the cross-section for b-jets produced in association with a Z boson at root s=7 TeV with the ATLAS detector ATLAS Collaboration

A measurement is presented of the inclusive cross-section for b-jet production in association with a Z boson in pp collisions at a centre-of-mass energy of root s = 7 TeV. The analysis uses the data sample collected by the ATLAS experiment in 2010, corresponding to an integrated luminosity of approximately 36 pb(-1). The event selection requires a Z boson decaying into high P-T electrons or muons, and at least one b-jet, identified by its displaced vertex, with transverse momentum p(T) > 25 GeV and rapidity vertical bar y vertical bar < 2.1. After subtraction of background processes, the yield is extracted from the vertex mass distribution of the candidate b-jets. The ratio of this cross-section to the inclusive Z cross-section (the average number of b-jets per Z event) is also measured. Both results are found to be in good agreement with perturbative QCD predictions at next-to-leading order

Beam-induced and cosmic-ray backgrounds observed in the ATLAS detector during the LHC 2012 proton-proton running period

This paper discusses various observations on beam-induced and cosmic-ray backgrounds in the ATLAS detector during the LHC 2012 proton-proton run. Building on published results based on 2011 data, the correlations between background and residual pressure of the beam vacuum are revisited. Ghost charge evolution over 2012 and its role for backgrounds are evaluated. New methods to monitor ghost charge with beam-gas rates are presented and observations of LHC abort gap population by ghost charge are discussed in detail. Fake jets from colliding bunches and from ghost charge are analysed with improved methods, showing that ghost charge in individual radio-frequency buckets of the LHC can be resolved. Some results of two short periods of dedicated cosmic-ray background data-taking are shown; in particular cosmic-ray muon induced fake jet rates are compared to Monte Carlo simulations and to the fake jet rates from beam background. A thorough analysis of a particular LHC fill, where abnormally high background was observed, is presented. Correlations between backgrounds and beam intensity losses in special fills with very high β∗ are studied

Beam-induced and cosmic-ray backgrounds observed in the ATLAS detector during the LHC 2012 proton-proton running period

This paper discusses various observations on beam-induced and cosmic-ray backgrounds in the ATLAS detector during the LHC 2012 proton-proton run. Building on published results based on 2011 data, the correlations between background and residual pressure of the beam vacuum are revisited. Ghost charge evolution over 2012 and its role for backgrounds are evaluated. New methods to monitor ghost charge with beam-gas rates are presented and observations of LHC abort gap population by ghost charge are discussed in detail. Fake jets from colliding bunches and from ghost charge are analysed with improved methods, showing that ghost charge in individual radio-frequency buckets of the LHC can be resolved. Some results of two short periods of dedicated cosmic-ray background data-taking are shown; in particular cosmic-ray muon induced fake jet rates are compared to Monte Carlo simulations and to the fake jet rates from beam background. A thorough analysis of a particular LHC fill, where abnormally high background was observed, is presented. Correlations between backgrounds and beam intensity losses in special fills with very high β* are studied

Characterization of wet-etched GaAs (100) surfaces

To enable the use of GaAs-based devices as chemical sensors, their surfaces must be chemically modified. Reproducible adsorption of molecules in the liquid phase on the GaAs surfaces requires controlled etching procedures. Several analytical methods were applied, including Fourier transform infrared spectroscopy (FTIRS) in attenuated total reflection and multiple internal reflection mode (ATR/MIR), high-resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) for the analysis of GaAs (100) samples treated with different wet-etching procedures. The assignment of the different features due to surface oxides present in the vibrational and XPS spectra was made by comparison with those of powdered oxides (Ga 2 O 3 , As 2 O 3 and As 2 O 5 ). The etching procedures here described, namely, those using low concentration HF solutions, substantially decrease the amount of arsenic oxides and aliphatic contaminants present in the GaAs (100) surfaces and completely remove gallium oxides. The mean thickness of the surface oxide layer drops from 1.6 nm in the raw sample to 0.1 nm after etching. However, in presence of light, water dissolution of arsenic oxides is enhanced, and oxidized species of gallium cover the surface

Cell and tissue response to nanotextured Ti6Al4V and Zr implants using high-speed femtosecond laser-induced periodic surface structures

In this paper, the effect of femtosecond laser nanotexturing of surfaces of Ti6Al4V and Zr implants on their biological compatibility is presented and discussed. Highly regular and homogeneous nanostructures with sub-micrometer period were imprinted on implant surfaces. Surfaces were morphologically and chemically investigated by SEM and XPS. HDFa cell lines were used for toxicity and cell viability tests, and subcutaneous implantation was applied to characterize tissue response. HDFa proliferation and in vivo experiments evidenced the strong influence of the surface topography compared to the effect of the surface elemental composition (metal or alloy). The effect of protein adsorption from blood plasma on cell proliferation is also discussed

Interaction of Self-Assembled Monolayers of DNA with Electrons: HREELS and XPS Studies

International audienceWe present results from high-resolution electron energy loss spectroscopy (HREELS) and XPS studies of self-assembled monolayers of DNA. The monolayers are well-organized and display sharp vibrational peaks in the HREEL spectra. The electrons interact mainly with the backbone of the DNA. The XPS results indicate that, in most of the samples studied, the phosphates on the DNA are not charged