4,109 research outputs found
Advanced Pixel Sensors and Readout Electronics Based on 3D Integration for the SuperB Silicon Vertex Tracker
AbstractThe potential of 3D integration of sensors and readout electronics is being explored in view of the demanding requirements of the innermost layer of the SuperB Silicon Vertex Tracker. This paper reviews the 3D designs that are targeting SuperB, which include CMOS active pixel sensors and front-end chips for fully-depleted, high-resistivity pixel sensors
Pixel Detectors for Charged Particles
Pixel Detectors, as the current technology of choice for the innermost vertex
detection, have reached a stage at which large detectors have been built for
the LHC experiments and a new era of developments, both for hybrid and for
monolithic or semi-monolithic pixel detectors is in full swing. This is largely
driven by the requirements of the upgrade programme for the superLHC and by
other collider experiments which plan to use monolithic pixel detectors for the
first time. A review on current pixel detector developments for particle
tracking and vertexing is given, comprising hybrid pixel detectors for superLHC
with its own challenges in radiation and rate, as well as on monolithic,
so-called active pixel detectors, including MAPS and DEPFET pixels for RHIC and
superBelle.Comment: 19 pages, 23 drawings in 14 figure
R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging
This report reviews current trends in the R&D of semiconductor pixellated
sensors for vertex tracking and radiation imaging. It identifies requirements
of future HEP experiments at colliders, needed technological breakthroughs and
highlights the relation to radiation detection and imaging applications in
other fields of science.Comment: 17 pages, 2 figures, submitted to the European Strategy Preparatory
Grou
A review of advances in pixel detectors for experiments with high rate and radiation
The Large Hadron Collider (LHC) experiments ATLAS and CMS have established
hybrid pixel detectors as the instrument of choice for particle tracking and
vertexing in high rate and radiation environments, as they operate close to the
LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for
which the tracking detectors will be completely replaced, new generations of
pixel detectors are being devised. They have to address enormous challenges in
terms of data throughput and radiation levels, ionizing and non-ionizing, that
harm the sensing and readout parts of pixel detectors alike. Advances in
microelectronics and microprocessing technologies now enable large scale
detector designs with unprecedented performance in measurement precision (space
and time), radiation hard sensors and readout chips, hybridization techniques,
lightweight supports, and fully monolithic approaches to meet these challenges.
This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog.
Phy
Trends in Detector R&D
Detectors are they eyes with which we observe the physics and explore new phenomena. The development of more performing detectors is essential for future physics discoveries and requires appropriate attention, funding, and recognition. In this paper the current trends in High Energy Physics detector research and development are reviewed. Since the topic is broader than the available space, figures are not included in the paper, but can be found in the references, whose main sources are the recent instrumentation conferences [1 – 6]
Thin Film Charged Particle Trackers
Silicon tracking detectors have grown to cover larger surface areas up to
hundreds of square meters, and are even taking over other sub-detectors, such
as calorimeters. However, further improvements in tracking detector performance
are more likely to arise from the ability to make a low mass detector comprised
of a high ratio of active sensor to dead materials, where dead materials
include electrical services, cooling, mechanical supports, etc. In addition,
the cost and time to build these detectors is currently large. Therefore,
advancements in the fundamental technology of tracking detectors may need to
look at a more transformative approach that enables extremely large area
coverage with minimal dead material and is easier and faster to build. The
advancement of thin film fabrication techniques has the potential to
revolutionize the next-to-next generation of particle detector experiments.
Some thin film deposition techniques have already been developed and widely
used in the industry to make LED screens for TV's and monitors. If large area
thin film detectors on the order of several square meters can be fabricated
with similar performance as current silicon technologies, they could be used in
future particle physics experiments. This paper aims to review the key
fundamental performance criteria of existing silicon detectors and past
research to use thin films and other semi-conductor materials as particle
detectors in order to explore the important considerations and challenges to
pursue thin film detectors.Comment: 32 pages, 15 figure
Beyond solid-state lighting: Miniaturization, hybrid integration, and applications og GaN nano- and micro-LEDs
Gallium Nitride (GaN) light-emitting-diode (LED) technology has been the revolution in modern lighting. In the last decade, a huge global market of efficient, long-lasting and ubiquitous white light sources has developed around the inception of the Nobel-price-winning blue GaN LEDs. Today GaN optoelectronics is developing beyond lighting, leading to new and innovative devices, e.g. for micro-displays, being the core technology for future augmented reality and visualization, as well as point light sources for optical excitation in communications, imaging, and sensing. This explosion of applications is driven by two main directions: the ability to produce very small GaN LEDs (microLEDs and nanoLEDs) with high efficiency and across large areas, in combination with the possibility to merge optoelectronic-grade GaN microLEDs with silicon microelectronics in a fully hybrid approach. GaN LED technology today is even spreading into the realm of display technology, which has been occupied by organic LED (OLED) and liquid crystal display (LCD) for decades. In this review, the technological transition towards GaN micro- and nanodevices beyond lighting is discussed including an up-to-date overview on the state of the art
Feasibility of Geiger-mode avalanche photodiodes in CMOS standard technologies for tracker detectors
The next generation of particle colliders will be characterized by linear lepton colliders, where the collisions between electrons and positrons will allow to study in great detail the new particle discovered at CERN in 2012 (presumably the Higgs boson). At present time, there are two alternative projects underway, namely the ILC (International Linear Collider) and CLIC (Compact LInear Collider). From the detector point of view, the physics aims at these particle colliders impose such extreme requirements, that there is no sensor technology available in the market that can fulfill all of them. As a result, several new detector systems are being developed in parallel with the accelerator.
This thesis presents the development of a GAPD (Geiger-mode Avalanche PhotoDiode) pixel detector aimed mostly at particle tracking at future linear colliders. GAPDs offer outstanding qualities to meet the challenging requirements of ILC and CLIC, such as an extraordinary high sensitivity, virtually infinite gain and ultra-fast response time, apart from compatibility with standard CMOS technologies. In particular, GAPD detectors enable the direct conversion of a single particle event onto a CMOS digital pulse in the sub-nanosecond time scale without the utilization of either preamplifiers or pulse shapers. As a result, GAPDs can be read out after each single bunch crossing, a unique quality that none of its competitors can offer at the moment. In spite of all these advantages, GAPD detectors suffer from two main problems. On the one side, there exist noise phenomena inherent to the sensor, which induce noise pulses that cannot be distinguished from real particle events and also worsen the detector occupancy to unacceptable levels. On the other side, the fill-factor is too low and gives rise to a reduced detection efficiency.
Solutions to the two problems commented that are compliant with the severe specifications of the next generation of particle colliders have been thoroughly investigated. The design and characterization of several single pixels and small arrays that incorporate some elements to reduce the intrinsic noise generated by the sensor are presented. The sensors and the readout circuits have been monolithically integrated in a conventional HV-CMOS 0.35 ÎĽm process. Concerning the readout circuits, both voltage-mode and current-mode options have been considered. Moreover, the time-gated operation has also been explored as an alternative to reduce the detected sensor noise. The design and thorough characterization of a prototype GAPD array, also monolithically integrated in a conventional 0.35 ÎĽm HV-CMOS process, is presented in the thesis as well. The detector consists of 10 rows x 43 columns of pixels, with a total sensitive area of 1 mm x 1 mm. The array is operated in a time-gated mode and read out sequentially by rows. The efficiency of the proposed technique to reduce the detected noise is shown with a wide variety of measurements. Further improved results are obtained with the
reduction of the working temperature. Finally, the suitability of the proposed detector array for particle detection is shown with the results of a beam-test campaign conducted at CERN-SPS (European Organization for Nuclear Research-Super Proton Synchrotron). Apart from that, a series of additional approaches to improve the performance of the GAPD technology are proposed. The benefits of integrating a GAPD pixel array in a 3D process in terms of overcoming the fill-factor limitation are examined first. The design of a GAPD detector in the Global Foundries 130 nm/Tezzaron 3D process is also presented. Moreover, the possibility to obtain better results in light detection applications by means of the time-gated operation or correction techniques is analyzed too.Aquesta tesi presenta el desenvolupament d’un detector de pĂxels de GAPDs (Geiger-mode Avalanche PhotoDiodes) dedicat principalment a rastrejar partĂcules en futurs col•lisionadors lineals. Els GAPDs ofereixen unes qualitats extraordinĂ ries per satisfer els requisits extremadament exigents d’ILC (International Linear Collider) i CLIC (Compact LInear Collider), els dos projectes per la propera generaciĂł de col•lisionadors que s’han proposat fins a dia d’avui. Entre aquestes qualitats es troben una sensibilitat extremadament elevada, un guany virtualment infinit i una resposta molt rĂ pida, a part de ser compatibles amb les tecnologies CMOS estĂ ndard. En concret, els detectors de GAPDs fan possible la conversiĂł directa d’un esdeveniment generat per una sola partĂcula en un senyal CMOS digital amb un temps inferior al nanosegon. Com a resultat d’aquest fet, els GAPDs poden ser llegits desprĂ©s de cada bunch crossing (la col•lisiĂł de les partĂcules), una qualitat Ăşnica que cap dels seus competidors pot oferir en el moment actual. Malgrat tots aquests avantatges, els detectors de GAPDs pateixen dos grans problemes. D’una banda, existeixen fenòmens de soroll inherents al sensor, els quals indueixen polsos de soroll que no poden ser distingits dels esdeveniments reals generats per partĂcules i que a mĂ©s empitjoren l’ocupaciĂł del detector a nivells inacceptables. D’altra banda, el fill-factor (Ă©s a dir, l’à rea sensible respecte l’à rea total) Ă©s molt baix i redueix l’eficiència detectora.
En aquesta tesi s’han investigat solucions als dos problemes comentats i que a mĂ©s compleixen amb les especificacions altament severes dels futurs col•lisionadors lineals. El detector de pĂxels de GAPDs, el qual ha estat monolĂticament integrat en un procĂ©s HV-CMOS estĂ ndard de 0.35 ÎĽm, incorpora circuits de lectura en mode voltatge que permeten operar el sensor en l’anomenat mode time-gated per tal de reduir el soroll detectat. L’eficiència de la tècnica proposada queda demostrada amb la gran varietat d’experiments que s’han dut a terme. Els resultats del beam-test dut a terme al CERN indiquen la capacitat del detector de pĂxels de GAPDs per detectar partĂcules altament energètiques. A banda d’això, tambĂ© s’han estudiat els beneficis d’integrar un detector de pĂxels de GAPDs en un procĂ©s 3D per tal d’incrementar el fill-factor. L’anĂ lisi realitzat conclou que es poden assolir fill-factors superiors al 90%
Technical Design Report for the PANDA Micro Vertex Detector
This document illustrates the technical layout and the expected performance of the Micro Vertex Detector (MVD) of the PANDA experiment. The MVD will detect charged particles as close as possible to the interaction zone. Design criteria and the optimisation process as well as the technical solutions chosen are discussed and the results of this process are subjected to extensive Monte Carlo physics studies. The route towards realisation of the detector is
outlined
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