10 research outputs found
Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells
A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n}
junctions is developed and solved numerically for a realistic set of material
parameters based on GaAs. It is demonstrated that spin polarization can be
injected through the depletion layer by both minority and majority carriers,
making all-semiconductor devices such as spin-polarized solar cells and bipolar
transistors feasible. Spin-polarized {\it p-n} junctions allow for
spin-polarized current generation, spin amplification, voltage control of spin
polarization, and a significant extension of spin diffusion range.Comment: 4 pages, 3 figure
Spin relaxation of conduction electrons in bulk III-V semiconductors
Spin relaxation time of conduction electrons through the Elliot-Yafet,
D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for
bulk GaAs, GaSb, InAs and InSb of both - and -type. Relative importance
of each spin relaxation mechanism is compared and the diagrams showing the
dominant mechanism are constructed as a function of temperature and impurity
concentrations. Our approach is based upon theoretical calculation of the
momentum relaxation rate and allows understanding of the interplay between
various factors affecting the spin relaxation over a broad range of temperature
and impurity concentration.Comment: an error in earlier version correcte
Exciton Spin Dynamics in Semiconductor Quantum Wells
In this paper we will review Exciton Spin Dynamics in Semiconductor Quantum
Wells. The spin properties of excitons in nanostructures are determined by
their fine structure. We will mainly focus in this review on GaAs and InGaAs
quantum wells which are model systems.Comment: 55 pages, 27 figure
Spin dynamics in semiconductors
This article reviews the current status of spin dynamics in semiconductors
which has achieved a lot of progress in the past years due to the fast growing
field of semiconductor spintronics. The primary focus is the theoretical and
experimental developments of spin relaxation and dephasing in both spin
precession in time domain and spin diffusion and transport in spacial domain. A
fully microscopic many-body investigation on spin dynamics based on the kinetic
spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published
in Physics Reports
Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and
manipulation of spin degrees of freedom in solid-state systems. This article
reviews the current status of this subject, including both recent advances and
well-established results. The primary focus is on the basic physical principles
underlying the generation of carrier spin polarization, spin dynamics, and
spin-polarized transport in semiconductors and metals. Spin transport differs
from charge transport in that spin is a nonconserved quantity in solids due to
spin-orbit and hyperfine coupling. The authors discuss in detail spin
decoherence mechanisms in metals and semiconductors. Various theories of spin
injection and spin-polarized transport are applied to hybrid structures
relevant to spin-based devices and fundamental studies of materials properties.
Experimental work is reviewed with the emphasis on projected applications, in
which external electric and magnetic fields and illumination by light will be
used to control spin and charge dynamics to create new functionalities not
feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes
from the published versio
Contribution a l'etude de la relaxation de spin electronique dans l'arseniure de gallium de type p
SIGLECNRS T Bordereau / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc