2,485 research outputs found

    Diffuse Reflection Diameter in Simple Polygons

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    We prove a conjecture of Aanjaneya, Bishnu, and Pal that the minimum number of diffuse reflections sufficient to illuminate the interior of any simple polygon with nn walls from any interior point light source is n/21\lfloor n/2 \rfloor - 1. Light reflecting diffusely leaves a surface in all directions, rather than at an identical angle as with specular reflections.Comment: To appear in Discrete Applied Mathematic

    Highly polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current

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    We consider electron tunneling from a nonmagnetic nn-type semiconductor (nn-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin nn-S layer near FM-S interface at low spin polarization of the current. We show that this effect can be used for an efficient polarization radiation source in a heterostructure where the accumulated spin polarized electrons are injected from nn-S and recombine with holes in a quantum well. The radiation polarization depends on a bias voltage applied to the FM-S junction.Comment: 4 pages, 2 figure

    Giant Magneto-Oscillations of Electric-Field-Induced Spin Polarization in 2DEG

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    We consider a disordered two-dimensional electron gas with spin-orbit coupling placed in a perpendicular magnetic field and calculate the magnitude and direction of the electric-field-induced spin polarization. We find that in strong magnetic fields the polarization becomes an oscillatory function of the magnetic field and that the amplitude of these oscillations is parametrically larger than the polarization at zero magnetic field. We show that the enhanced amplitude of the polarization is a consequence of strong electron-hole asymmetry in a quantizing magnetic field.Comment: 6 pages, 3 figure

    New Origin For Spin Current And Current-Induced Spin Precession In Magnetic Multilayers

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    In metallic ferromagnets, an electric current is accompanied by a flux of angula r momentum, also called spin current. In multilayers, spatial variations of the spin current correspond to drive torques exerted on a magnetic layer. These torq ues result in spin precession above a certain current threshold. The usual kind of spin current is associated with translation of the spin-up and spin-down Ferm i surfaces in momentum space. We discuss a different kind of spin current, assoc iated with expansion and contraction of the Fermi surfaces. It is more nonlocal in nature, and may exist even in locations where the electrical current density is zero. It is larger than the usual spin current, in a ratio of 10 or 100, and is dominant in most cases. The new spin current is proportional to the differenc e Delta-mu = 0.001 eV between spin-up and spin-down Fermi levels, averaged over the entire Fermi surface. Conduction processes, spin relaxation, and spin-wave emission in the multilayer can be described by an equivalent electrical circuit resembling an unbalanced dc Wheatstone bridge. And Delta-mu corresponds to the output voltage of the bridge.Comment: 5 pages, 3 figures. To appear in J. Appl. Phys., vol. 89, May 15, 200

    Geometrical effects on spin injection: 3D spin drift diffusion model

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    We discuss a three-dimensional (3D) spin drift diffusion (SDD) model to inject spin from a ferromagnet (FM) to a normal metal (N) or semiconductor (SC). Using this model we investigate the problem of spin injection into isotropic materials like GaAs and study the effect of FM contact area and SC thickness on spin injection. We find that in order to achieve detectable spin injection a small contact area or thick SC samples are essential for direct contact spin injection devices. We investigate the use of thin metal films (Cu) proposed by S.B. Kumar et al. and show that they are an excellent substitute for tunnelling barriers (TB) in the regime of small contact area. Since most tunnelling barriers are prone to pinhole defects, we study the effect of pinholes in AlO tunnelling barriers and show that the reduction in the spin-injection ratio (γ\gamma) is solely due to the effective area of the pinholes and there is no correlation between the number of pinholes and the spin injection ratio.Comment: 5 pages, 6 figures. Accepted by JA
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