Global Supply Chain Trends in the Digital Economy Development and Its Individual Tools

Abstract The modern development of the world economy is accompanied by an increase in the role of science and innovation, the spread of information and communication technologies (ICT), including robotics. Today, ICT can be considered a leading factor in the arrangement of production and business processes, education, interaction of various subjects of society (state, organizations, and population), obtaining knowledge and information, leisure activities, and trade. ICT strengthen the material and technical base and stimulate socio-economic development, increasing the competitiveness and productive potential of the country’s economy. This topic is currently relevant, as the information society involves the widespread use of various information technologies in all areas of our activities. For example, at the moment in our society, a huge role is played by robotics, systems for distributing, storing and processing information that are based on computers. More and more inter-regional and international connections are being formed, which allows the exchange of information over long distances in the shortest possible time. In addition, the number of organizations using robotics is growing every day

Effect of Bias Fields on off-Diagonal Magnetoimpedance (MI) Sensor Performance

This paper investigates the performance of off-diagonal magnetoimpedance in Co-based amorphous wire subjected to dc bias fields: circular and orthogonal (with respect to the wire axis). Typically it is as-sumed that the wire impedance is insensitive to the orthogonal field so the wire element can be used to construct 3D sensors. Our results demonstrated the possibility of large impedance change due to this field, in the range of 10 mV/Oe. The dc current in a wire generating a circular field results in improved sensitivi-ty due to elimination of the domain structure and smoothing the effect of the anisotropy deviations. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3633

Аптамеры для терапии бактериальных инфекций: проблемы и перспективы

Aptamers are short single-stranded oligonucleotides which are selected via targeted chemical evolution in vitro to bind a molecular target of interest. The aptamer selection technology is designated as SELEX (Systematic evolution of ligands by exponential enrichment). SELEX enables isolation of oligonucleotide aptamers binding a wide range of targets of interest with little respect for their nature and molecular weight. A number of applications of aptamer selection were developed ranging from biosensor technologies to antitumor drug discovery. First aptamer-based pharmaceutical (Macugen) was approved by FDA for clinical use in 2004, and since then more than ten aptamer-based drugs undergo various phases of clinical trials. From the medicinal chemist’s point of view, aptamers represent a new class of molecules suitable for the development of new therapeutics. Due to the stability, relative synthesis simplicity, and development of advanced strategies of target specific molecular selection, aptamers attract increased attention of drug discovery community. Difficulties of the development of next-generation antibiotics basing on the conventional basis of combinatorial chemistry and high-throughput screening have also amplified the interest to aptamer-based therapeutic candidates. The present article reviews the investigations focused on the development of antibacterial aptamers and discusses the potential and current limitations of the use of this type of therapeutic molecules.Аптамеры ― короткие одноцепочечные фрагменты нуклеиновых кислот, которые в процессе направленной химической «эволюции в пробирке» на основе технологии SELEX отбирают на специфичность к избранной молекулярной мишени. Возможность получать при помощи SELEX олигонуклеотиды, связывающие широчайший спектр высоко- и низкомолекулярных лигандов, а также простота автоматизированного синтеза привели к созданию широкого спектра приложений аптамеров ― от биосенсоров до противоопухолевых препаратов. С точки зрения медицинской химии, аптамеры являются новым классом молекул, на основе которых могут быть разработаны лекарственные препараты. Поэтому, а также ввиду стабильности, относительной простоты синтеза и создания все более эффективных стратегий селекции мишеньспецифических молекул аптамеры привлекают внимание разработчиков лекарственных средств, в том числе и антибактериальных. Интерес к антибактериальным аптамерам усиливается и в связи с проблемами, возникшими при разработке принципиально новых антибактериальных средств на основе классических химических соединений ― как малых органических молекул, так и синтетических модификаций известных антибиотиков. В настоящем обзоре рассматриваются работы, направленные на создание противоинфекционных аптамеров, и обсуждаются как потенциал, так и существующие на данном этапе ограничения, свойственные этому классу терапевтических молекул

Properties of superhard nanostructured coatings Ti-Hf-Si-N

New superhard coatings based on Ti-Hf-Si-N featuring high physical and mechanical properties were fabricated. We employed a vacuum-arc source with HF stimulation and a cathode sintered from Ti-Hf-Si. Nitrides were fabricated using atomic nitrogen (N) or a mixture of Ar/N, which were leaked-in a chamber at various pressures and applied to a substrate potentials. RBS, SIMS, GT-MS, SEM with EDXS, XRD, and nanoindentation were employed as analyzing methods of chemical and phase composition of thin films. We also tested tribological and corrosion properties. The resulting coating was a two-phase, nanostructured nc-(Ti, Hf)N and α-Si3N4. Sizes of substitution solid solution nanograins changed from 3.8 to 6.5 nm, and an interface thickness surrounding α-Si3N4 varied from 1.2 to 1.8 nm. Coatings hardness, which was measured by nanoindentation was from 42.7 GPa to 48.6 GPa, and an elastic modulus was E = (450 to 515) GPa. The films stoichiometry was defined for various deposition conditions. It was found that in samples with superhard coatings of 42.7 to 48.6GPa hardness and lower roughness in comparison with other series of samples, friction coefficient was equal to 0.2, and its value did not change over all depth (thickness) of coatings. A film adhesion to a substrate was essentially high and reached 25MPa. В работе получены новые сверхтвердые покрытия на основе Ti-Hf-Si-N с высокими физико-механическими свойствами. В процессе синтеза методом вакуумно-дугового осаждения с применением ВЧ напряжения распылялся цельнолитой катод Ti-Hf-Si. Нитриды формировались в среде атомарного азота (N) или в смеси Ar/N, которые напускались в камеру при различных давлениях. Химический и фазовый составы тонких пленок анализировался методами RBS, SIMS, GT-MS, SEM с EDXS, РСА, а твердость определялась наноиндентированием. Исследовались трибологические и коррозионные свойства покрытий. Полученные покрытия являются двухфазными наноструктурированными nс-(Ti, Hf)N и α-Si3N4. Размеры нанозерен твердого раствора варьировались от 3,8 до 6,5 нм, а толщина окружающей оболочки α-Si3N4 менялась от 1,2 до 1,8 нм. Твердость покрытий H составляла 42,7 48,6 ГПа, а модуль упругости Е принимал значения от 450 ГПа до 515 ГПа. Определена стехиометрия пленок при различных условиях осаждения. Установлено, что в образцах сверхтвердых покрытий с твердостью 42,7 48.6 ГПа наблюдалась более низкая шероховатость по сравнению с другими образцами, коэффициент трения составлял 0,2, и его значение не изменялось по всей глубине (толщине) покрытия. Адгезия пленки к подложке достигла 25 МПа. У роботі отримані нові надтверді покриття на основі Ti-Hf-Sі-N з високими фізико-механічними властивостями. У процесі синтезу методом вакуумно-дугового осадження із застосуванням ВЧ напруги розпорошувався суцільнолитий катод Tі-Hf-Sі. Нітриди формувалися у середовищі атомарного азоту (N) або у суміші Ar/N, які напускалися у камеру при різних тисках. Хімічний і фазовий склади тонких плівок аналізувалися методами RBS, SІMS, GT-MS, SEM з EDXS, РСА, а твердість визначалася наноіндентуванням. Досліджувалися трибологічні та корозійні властивості покриттів. Отримані покриття є двофазними наноструктурованими nс-(Tі, Hf)N і -Sі3N4. Розміри нанозерен твердого розчину варіювалися від 3,8 до 6,5 нм, а товщина навколишньої оболонки -Sі3N4 змінювалася від 1,2 до 1,8 нм. Твердість покриттів H становила 42,7 48,6 ГПа, а модуль пружності Е приймав значення від 450 ГПа до 515 ГПа. Визначено стехіометрію плівок при різних умовах осадження. Встановлено, що у зразках надтвердих покриттів із твердістю 42,7 48.6 ГПа спостерігалася нижча шорсткість у порівнянні з іншими зразками, коефіцієнт тертя становив 0,2, і його значення не змінювалося за глибиною (товщиною) покриття. Адгезія плівки до підкладки досягла 25 МПа

Inclusive production of charged pions in p+C collisions at 158 GeV/c beam momentum

The production of charged pions in minimum bias p+C interactions is studied using a sample of 377000 inelastic events obtained with the NA49 detector at the CERN SPS at 158 GeV/c beam momentum. The data cover a phase space area ranging from 0 to 1.8 GeV/c in transverse momentum and from -0.1 to 0.5 in Feynman x. Inclusive invariant cross sections are given on a grid of 270 bins per charge thus offering for the first time a dense coverage of the projectile hemisphere and of the cross-over region into the target fragmentation zone.Comment: 31 pages, 30 figures, submitted to European Journal of Physic

Search for direct production of charginos and neutralinos in events with three leptons and missing transverse momentum in √s = 7 TeV pp collisions with the ATLAS detector

A search for the direct production of charginos and neutralinos in final states with three electrons or muons and missing transverse momentum is presented. The analysis is based on 4.7 fb−1 of proton–proton collision data delivered by the Large Hadron Collider and recorded with the ATLAS detector. Observations are consistent with Standard Model expectations in three signal regions that are either depleted or enriched in Z-boson decays. Upper limits at 95% confidence level are set in R-parity conserving phenomenological minimal supersymmetric models and in simplified models, significantly extending previous results

Jet size dependence of single jet suppression in lead-lead collisions at sqrt(s(NN)) = 2.76 TeV with the ATLAS detector at the LHC

Measurements of inclusive jet suppression in heavy ion collisions at the LHC provide direct sensitivity to the physics of jet quenching. In a sample of lead-lead collisions at sqrt(s) = 2.76 TeV corresponding to an integrated luminosity of approximately 7 inverse microbarns, ATLAS has measured jets with a calorimeter over the pseudorapidity interval |eta| < 2.1 and over the transverse momentum range 38 < pT < 210 GeV. Jets were reconstructed using the anti-kt algorithm with values for the distance parameter that determines the nominal jet radius of R = 0.2, 0.3, 0.4 and 0.5. The centrality dependence of the jet yield is characterized by the jet "central-to-peripheral ratio," Rcp. Jet production is found to be suppressed by approximately a factor of two in the 10% most central collisions relative to peripheral collisions. Rcp varies smoothly with centrality as characterized by the number of participating nucleons. The observed suppression is only weakly dependent on jet radius and transverse momentum. These results provide the first direct measurement of inclusive jet suppression in heavy ion collisions and complement previous measurements of dijet transverse energy imbalance at the LHC.Comment: 15 pages plus author list (30 pages total), 8 figures, 2 tables, submitted to Physics Letters B. All figures including auxiliary figures are available at http://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PAPERS/HION-2011-02

Observation of a new chi_b state in radiative transitions to Upsilon(1S) and Upsilon(2S) at ATLAS

The chi_b(nP) quarkonium states are produced in proton-proton collisions at the Large Hadron Collider (LHC) at sqrt(s) = 7 TeV and recorded by the ATLAS detector. Using a data sample corresponding to an integrated luminosity of 4.4 fb^-1, these states are reconstructed through their radiative decays to Upsilon(1S,2S) with Upsilon->mu+mu-. In addition to the mass peaks corresponding to the decay modes chi_b(1P,2P)->Upsilon(1S)gamma, a new structure centered at a mass of 10.530+/-0.005 (stat.)+/-0.009 (syst.) GeV is also observed, in both the Upsilon(1S)gamma and Upsilon(2S)gamma decay modes. This is interpreted as the chi_b(3P) system.Comment: 5 pages plus author list (18 pages total), 2 figures, 1 table, corrected author list, matches final version in Physical Review Letter