The Physics of the B Factories

This work is on the Physics of the B Factories. Part A of this book contains a brief description of the SLAC and KEK B Factories as well as their detectors, BaBar and Belle, and data taking related issues. Part B discusses tools and methods used by the experiments in order to obtain results. The results themselves can be found in Part C

Towards 500°C SPER activated devices for 3D sequential integration

session: Monolithic 3D 3International audienceThis work investigates the possibility to reduce the Solid Phase Epitaxy Regrowth (SPER) temperature for dopant activation needed in 3D sequential integration. The electrical results obtained on 28nm FDSOI devices show that 500°C SPER can yield similar performance to that of 600°C SPER and 1050°C spike anneal. This paper highlights the advantages of using a -oriented channel and tilted implantation to successfully reduce the SPER thermal budget. It also confirms that the channel can be used as a seed for the recrystallization. The analysis takes into account the SPER rate dependence on temperature, crystalline orientation, dopant type and dopant concentration

High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration

session 32: Process and Manufacturing Technology (32.2)International audienceFor the first time, a low temperature (LT) FinFET process is demonstrated, using Solid Phase Epitaxy Regrowth (SPER), gate last integration and Self Aligned Contact (SAC). The LT devices exhibit performances close to those of the High Temperature Process Of Reference (HT POR). Several techniques of SPER doping are investigated and an innovative Double SPER (DSPER) process using two amorphization/recrystallization steps, is demonstrated. This DSPER process has the advantage of doping the bulk of the S/D junctions. This work opens the door to the fabrication of high-performance LT FinFETs for 3D sequential integration

High performance CMOS FDSOI devices activated at low temperature

International audience3D sequential integration requires top FETs processed with a low thermal budget (500-600°C). In this work, high performance low temperature FDSOI devices are obtained thanks to the adapted extension first architecture and the introduction of mobility boosters (pMOS: SiGe 27% channel / SiGe:B 35% RSD and nMOS: SiC:P RSD). This first demonstration of n and p extension first FDSOI devices shows that low temperature activated device can match the performance of a device with state-of-the-art high temperature process (above 1000°C)

The BaBar detector: Upgrades, operation and performance

Contains fulltext : 121729.pdf (preprint version ) (Open Access

The DIRC detector at Babar

A dedicated particle identification system based on the Detection of Internally Reflected Cherenkov (DIRC) light will be used in the BaBar detector. We provide an overview of the DIRC concept, design, and expected performance of the production device and a status report on its construction and commissioning. The DIRC is expected to be operating in the BaBar detector on beam line at the PEP-II B Factory in late spring 1999

Simultaneous measurement of the B-0 meson lifetime and mixing frequency with B-0 -> D(*-)l(+)nu(l) decays RID C-2728-2008 RID C-5223-2009 RID C-5719-2008 RID D-1055-2009 RID A-2675-2009

We measure the B-0 lifetime tau(B)(0) and the B-0-(B) over bar (0) oscillation frequency Deltam(d) with a sample of approximately 14000 exclusively reconstructed B-0-->D(*-)l(+)nul signal events, selected from 23 million B (B) over bar pairs recorded at the Y(4S) resonance with the BABAR detector at the Stanford Linear Accelerator Center. The decay position of the other B is determined with the remaining tracks in the event, and its b-quark flavor at the time of decay is determined with a tagging algorithm that exploits the correlation between the flavor of the b quark and the charges of its decay products. The lifetime and oscillation frequencies are measured simultaneously with an unbinned maximum-likelihood fit that uses, for each event, the measured difference in decay times of the two B mesons (Deltat), the calculated uncertainty on Deltat, the signal and background probabilities, and b-quark tagging information for the other B. The results are tau(B)(0)=(1.523(-0.023)(+0.024)+/-0.022) ps and Deltam(d)=(0.492+/-0.018+/-0.013) ps(-1). The statistical correlation coefficient between tau(B)(0) and Deltam(d) is -0.22

Measurement of B-0 -> D-s(*)D+*(-) branching fractions and B-0 -> D-s*D+*(-) polarization with a partial reconstruction technique RID C-2728-2008 RID C-5223-2009 RID C-5719-2008 RID D-1055-2009 RID A-2675-2009

We present a study of the decays B-0 --> D-s((*)) D*-, using 20.8 fb(-1) of e(+)e(-) annihilation data recorded with the BABAR detector. The analysis is conducted with a partial reconstruction technique, in which only the D-s((*)+) and the soft pion from the D*- decay are reconstructed. We measure the branching fractions B(B-0 --> Ds+D*-) = (1.03 +/- 0.14 +/- 0.13 +/- 0.26)% and B(B-0 --> D-s(*+) D*-) = (1.97 +/- 0.15 +/- 0.30+/- 0.49)%, where the first error is statistical, the second is systematic, and the third is the error due to the D-s(+) --> phipi(+) branching fraction uncertainty. From the B-0 --> D-s(*+) D*- angular distributions, we measure the fraction of longitudinal polarization Gamma(L)/Gamma = (51.9 +/- 5.0 +/- 2.8)%, which is consistent with theoretical predictions based on factorization