Ink‐Jet Printable, Self‐Assembled, and Chemically Crosslinked Ion‐Gel as Electrolyte for Thin Film, Printable Transistors

Electrolyte-gated transistors (EGTs) represent an interesting alternative to conventional dielectric-gating to reduce the required high supply voltage for printed electronic applications. Here, a type of ink-jet printable ion-gel is introduced and optimized to fabricate a chemically crosslinked ion-gel by self-assembled gelation, without additional crosslinking processes, e.g., UV-curing. For the self-assembled gelation, poly(vinyl alcohol) and poly(ethylene-alt-maleic anhydride) are used as the polymer backbone and chemical crosslinker, respectively, and 1-ethyl-3-methylimidazolium trifluoromethanesulfonate ([EMIM][OTf]) is utilized as an ionic species to ensure ionic conductivity. The as-synthesized ion-gel exhibits an ionic conductivity of ≈5 mS cm−1 and an effective capacitance of 5.4 µF cm−2 at 1 Hz. The ion-gel is successfully employed in EGTs with an indium oxide (In2O3) channel, which shows on/off-ratios of up to 1.3 × 106 and a subthreshold swing of 80.62 mV dec−1

Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors

In this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm⁻¹ at room temperature. When used as a gate insulator in electrolyte‐gated transistors (EGTs), an on/off current ratio of 2.24×10⁴ and a subthreshold swing of 117 mV dec⁻¹ can be achieved. This performance is roughly equivalent to that of ink drop‐casted ion‐gels in electrolyte‐gated transistors, indicating that the film‐attachment method might represent a valuable alternative to ink drop‐casting for the fabrication of gate insulators

Gas Electron Multiplier (GEM) Chamber Characteristics Test

Gas Electron Multipliers (GEMs) have been used in many HEP experiments as tracking detectors. They are sensitive to X-rays which allows use beyond that of HEP. The UTA High Energy group has been working on using GEMs as the sensitive gap detector in a DHCAL for the ILC. The physics goals at the ILC put a stringent requirement on detector performance. Especially the precision required for jet mass and positions demands an unprecedented jet energy resolution to hadronic calorimeters. A solution to meet this requirement is using the Particle Flow Algorithm (PFA). In order for PFA to work well, high calorimeter granularity is necessary. Previous studies based on GEANT simulations using GEM DHCAL gave confidence on the performance of GEM in the sensitive gap in a sampling calorimeter and its use as a DHCAL in PFA. The UTA HEP team has built several GEM prototype chambers, including the current 30cm x 30cm chamber integrated with the SLAC-developed 64 channel kPiX analog readout chip. This chamber has been tested on the bench using radioactive sources and cosmic ray muons. In order to have fuller understanding of various chamber characteristics, the experiments plan to expose 1-3 GEM chambers of dimension 35cm x 35cm x 5cm with 1cm x 1cm pad granularity with 64 channel 2-D simultaneous readout using the kPiX chip. In this experiment the experiments pan to measure MiP signal height, chamber absolute efficiencies, chamber gain versus high voltage across the GEM gap, the uniformity of the chamber across the 8cm x 8cm area, cross talk and its distance dependence to the triggered pad, chamber rate capabilities, and the maximum pad occupancy rate

Spinel to Rock-Salt Transformation in High Entropy Oxides with Li Incorporation

High entropy oxides (HEOs) constitute a promising class of materials with possibly new and largely unexplored properties. The virtually infinite variety of compositions (multi-element approach) for a single-phase structure allows the tailoring of their physical properties and enables unprecedented materials design. Nevertheless, this level of versatility renders their characterization as well as the study of specific processes or reaction mechanisms challenging. In the present work, we report the structural and electrochemical behavior of different multi-cationic HEOs. Phase transformation from spinel to rock-salt was observed upon incorporation of monovalent Li+ ions, accompanied by partial oxidation of certain elements in the lattice. This transition was studied by X-ray diffraction, inductively coupled plasma-optical emission spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and attenuated total reflection infrared spectroscopy. In addition, the redox behavior was probed using cyclic voltammetry. Especially, the lithiated rock-salt structure HEOs were found to exhibit potential for usage as negative and positive electrode materials in rechargeable lithium-ion batteries

Ink‐Jet Printable, Self‐Assembled, and Chemically Crosslinked Ion‐Gel as Electrolyte for Thin Film, Printable Transistors

Electrolyte‐gated transistors (EGTs) represent an interesting alternative to conventional dielectric‐gating to reduce the required high supply voltage for printed electronic applications. Here, a type of ink‐jet printable ion‐gel is introduced and optimized to fabricate a chemically crosslinked ion‐gel by self‐assembled gelation, without additional crosslinking processes, e.g., UV‐curing. For the self‐assembled gelation, poly(vinyl alcohol) and poly(ethylene‐alt‐maleic anhydride) are used as the polymer backbone and chemical crosslinker, respectively, and 1‐ethyl‐3‐methylimidazolium trifluoromethanesulfonate ([EMIM][OTf]) is utilized as an ionic species to ensure ionic conductivity. The as‐synthesized ion‐gel exhibits an ionic conductivity of ≈5 mS cm⁻¹ and an effective capacitance of 5.4 µF cm⁻² at 1 Hz. The ion‐gel is successfully employed in EGTs with an indium oxide (In₂O₃) channel, which shows on/off‐ratios of up to 1.3 × 10⁶ and a subthreshold swing of 80.62 mV dec⁻¹

Optimasi Portofolio Resiko Menggunakan Model Markowitz MVO Dikaitkan dengan Keterbatasan Manusia dalam Memprediksi Masa Depan dalam Perspektif Al-Qur`an

Risk portfolio on modern finance has become increasingly technical, requiring the use of sophisticated mathematical tools in both research and practice. Since companies cannot insure themselves completely against risk, as human incompetence in predicting the future precisely that written in Al-Quran surah Luqman verse 34, they have to manage it to yield an optimal portfolio. The objective here is to minimize the variance among all portfolios, or alternatively, to maximize expected return among all portfolios that has at least a certain expected return. Furthermore, this study focuses on optimizing risk portfolio so called Markowitz MVO (Mean-Variance Optimization). Some theoretical frameworks for analysis are arithmetic mean, geometric mean, variance, covariance, linear programming, and quadratic programming. Moreover, finding a minimum variance portfolio produces a convex quadratic programming, that is minimizing the objective function ðð¥with constraintsð ð 𥠥 ðandð´ð¥ = ð. The outcome of this research is the solution of optimal risk portofolio in some investments that could be finished smoothly using MATLAB R2007b software together with its graphic analysis

Search for heavy resonances decaying to two Higgs bosons in final states containing four b quarks

A search is presented for narrow heavy resonances X decaying into pairs of Higgs bosons (H) in proton-proton collisions collected by the CMS experiment at the LHC at root s = 8 TeV. The data correspond to an integrated luminosity of 19.7 fb(-1). The search considers HH resonances with masses between 1 and 3 TeV, having final states of two b quark pairs. Each Higgs boson is produced with large momentum, and the hadronization products of the pair of b quarks can usually be reconstructed as single large jets. The background from multijet and t (t) over bar events is significantly reduced by applying requirements related to the flavor of the jet, its mass, and its substructure. The signal would be identified as a peak on top of the dijet invariant mass spectrum of the remaining background events. No evidence is observed for such a signal. Upper limits obtained at 95 confidence level for the product of the production cross section and branching fraction sigma(gg -> X) B(X -> HH -> b (b) over barb (b) over bar) range from 10 to 1.5 fb for the mass of X from 1.15 to 2.0 TeV, significantly extending previous searches. For a warped extra dimension theory with amass scale Lambda(R) = 1 TeV, the data exclude radion scalar masses between 1.15 and 1.55 TeV

Search for supersymmetry in events with one lepton and multiple jets in proton-proton collisions at root s=13 TeV

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