Towards smooth (010) ß-Ga2O3films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio

Smooth interfaces and surfaces are beneficial for most (opto)electronic devices that are based on thin films and their heterostructures. For example, smoother interfaces in (010) ß-Ga2O3/(AlxGa1-x)2O3 heterostructures, whose roughness is ruled by that of the ß-Ga2O3 layer, can enable higher mobility 2-dimensional electron gases by reducing interface roughness scattering. To this end we experimentally prove that a substrate offcut along the [001] direction allows to obtain smooth ß-Ga2O3 layers in (010)-homoepitaxy under metal-rich deposition conditions. Applying In-mediated metal-exchange catalysis (MEXCAT) in molecular beam epitaxy at high substrate temperatures (Tg = 900 °C) we compare the morphology of layers grown on (010)-oriented substrates having different unintentional offcuts. The layer roughness is generally ruled by (i) the presence of (110)-and bar 110-facets visible as elongated features along the [001] direction (rms < 0.5 nm), and (ii) the presence of trenches (5-10 nm deep) orthogonal to [001]. We show that an unintentional substrate offcut of only ˜ 0.1° almost oriented along the [001] direction suppresses these trenches resulting in a smooth morphology with a roughness exclusively determined by the facets, i.e. rms ˜ 0.2 nm. Since we found the facet-and-trench morphology in layer grown by MBE with and without MEXCAT, we propose that the general growth mechanism for (010)-homoepitaxy is ruled by island growth whose coalescence results in the formation of the trenches. The presence of a substrate offcut in the [001] direction can allow for step-flow growth or island nucleation at the step edges, which prevents the formation of trenches. Moreover, we give experimental evidence for a decreasing surface diffusion length or increasing nucleation density on the substrate surface with decreasing metal-to-oxygen flux ratio. Based on our experimental results we can rule-out step bunching as cause of the trench formation as well as a surfactant-effect of indium during MEXCAT. © 2020 The Author(s). Published by IOP Publishing Ltd

Compensating vacancy defects in Sn- and Mg-doped In 2O3

MBE-grown Sn- and Mg-doped epitaxial In2O3 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy and compared to a bulk crystal reference. Samples were subjected to oxygen or vacuum annealing and the effect on vacancy type defects was studied. Results indicate that after oxygen annealing the samples are dominated by cation vacancies, the concentration of which changes with the amount of doping. In highly Sn-doped In2O3, however, these vacancies are not the main compensating acceptor. Vacuum annealing increases the size of vacancies in all samples, possibly by clustering them with oxygen vacancies.Peer reviewe

Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon

The fundamental issue of oxygen stoichiometry in oxide thin film growth by subliming the source oxide is investigated by varying the additionally supplied oxygen during molecular beam epitaxy of RE2O3 (RE = Gd, La, Lu) thin films on Si(111). Supplying additional oxygen throughout the entire growth was found to prevent the formation of rare earth silicides observed in films grown without an oxygen source. Postgrowth vacuum annealing of oxygen stoichiometric films did not lead to silicide formation thereby confirming that the silicides do not form as a result of an interface instability at growth temperature in vacuum but rather due to an oxygen deficiency in the source vapor. The average oxygen deficiency of the rare-earth containing species in the source vapor was quantified by the 18O tracer technique and correlated with that of the source material, which gradually decomposed during sublimation. Therefore, any oxide growth by sublimation of the oxide source material requires additional oxygen to realize oxygen stoichiometric films

Phase-selective growth of κ\kappa- vs β\beta-Ga2_2O3_3 and (Inx_xGa1−x_{1-x})2_2O3_3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of Ga$_2$O$_3$ an interesting material for multiple applications, while In-incorporation into any polymorphs of Ga$_2$O$_3$ allows to lower their bandgap. In this work, we provide a guideline to achieve single phase $\kappa$-, $\beta$-Ga$_2$O$_3$ as well as their (In$_x$Ga$_{1-x}$)$_2$O$_3$ alloys up to x = 0.14 and x = 0.17 respectively, using In-mediated metal exchange catalysis in plasma assisted molecular beam epitaxy (MEXCAT-MBE). The polymorph transition from $\kappa$ to $\beta$ is also addressed, highlighting the fundamental role played by the thermal stability of the $\kappa$-Ga$_2$O$_3$. Additionally, we also demonstrate the possibility to grow ($\bar{2}$01) $\beta$-Ga$_2$O$_3$ on top of $\alpha$-Al$_2$O$_3$ (0001) at temperatures at least 100 {\deg}C above those achievable with conventional non-catalyzed MBE, opening the road for increased crystal quality in heteroepitaxy. The role of the substrate, as well as strain and structural defects in the growth of $\kappa$-Ga$_2$O$_3$ is also investigated by growing simultaneously on three different materials: (i) $\alpha$-Al$_2$O$_3$ (0001), (ii) 20 nm of ($\bar{2}$01) $\beta$-Ga$_2$O$_3$ on $\alpha$-Al$_2$O$_3$ (0001) and (iii) ($\bar{2}$01) $\beta$-Ga$_2$O$_3$ single crystal.Comment: Main text: 7 pages, 4 figures; Supplementary: 6 pages, 9 figure

Electrical conductivity and gas-sensing properties of Mg-doped and undoped single-crystalline In2O3 thin films: Bulk vs. surface

This study aims to provide a better fundamental understanding of the gas-sensing mechanism of In2O3-based conductometric gas sensors. In contrast to typically used polycrystalline films, we study single crystalline In2O3 thin films grown by molecular beam epitaxy (MBE) as a model system with reduced complexity. Electrical conductance of these films essentially consists of two parallel contributions: the bulk of the film and the surface electron accumulation layer (SEAL). Both these contributions are varied to understand their effect on the sensor response. Conductance changes induced by UV illumination in air, which forces desorption of oxygen adatoms on the surface, give a measure of the sensor response and show that the sensor effect is only due to the SEAL contribution to overall conductance. Therefore, a strong sensitivity increase can be expected by reducing or eliminating the bulk conductivity in single crystalline films or the intra-grain conductivity in polycrystalline films. Gas-response measurements in ozone atmosphere test this approach for the real application

Electrical conductivity and gas-sensing properties of Mg-doped and undoped single-crystalline In2O3 thin films: Bulk vs. surface

This study aims to provide a better fundamental understanding of the gas-sensing mechanism of In2O3-based conductometric gas sensors. In contrast to typically used polycrystalline films, we study single crystalline In2O3 thin films grown by molecular beam epitaxy (MBE) as a model system with reduced complexity. Electrical conductance of these films essentially consists of two parallel contributions: the bulk of the film and the surface electron accumulation layer (SEAL). Both these contributions are varied to understand their effect on the sensor response. Conductance changes induced by UV illumination in air, which forces desorption of oxygen adatoms on the surface, give a measure of the sensor response and show that the sensor effect is only due to the SEAL contribution to overall conductance. Therefore, a strong sensitivity increase can be expected by reducing or eliminating the bulk conductivity in single crystalline films or the intra-grain conductivity in polycrystalline films. Gas-response measurements in ozone atmosphere test this approach for the real application

Measurements of fiducial and differential cross sections for Higgs boson production in the diphoton decay channel at s√=8 TeV with ATLAS

Measurements of fiducial and differential cross sections are presented for Higgs boson production in proton-proton collisions at a centre-of-mass energy of s√=8 TeV. The analysis is performed in the H → γγ decay channel using 20.3 fb−1 of data recorded by the ATLAS experiment at the CERN Large Hadron Collider. The signal is extracted using a fit to the diphoton invariant mass spectrum assuming that the width of the resonance is much smaller than the experimental resolution. The signal yields are corrected for the effects of detector inefficiency and resolution. The pp → H → γγ fiducial cross section is measured to be 43.2 ±9.4(stat.) − 2.9 + 3.2 (syst.) ±1.2(lumi)fb for a Higgs boson of mass 125.4GeV decaying to two isolated photons that have transverse momentum greater than 35% and 25% of the diphoton invariant mass and each with absolute pseudorapidity less than 2.37. Four additional fiducial cross sections and two cross-section limits are presented in phase space regions that test the theoretical modelling of different Higgs boson production mechanisms, or are sensitive to physics beyond the Standard Model. Differential cross sections are also presented, as a function of variables related to the diphoton kinematics and the jet activity produced in the Higgs boson events. The observed spectra are statistically limited but broadly in line with the theoretical expectations

Measurement of the cross-section and charge asymmetry of WW bosons produced in proton-proton collisions at s=8\sqrt{s}=8 TeV with the ATLAS detector

This paper presents measurements of the $W^+ \rightarrow \mu^+\nu$ and $W^- \rightarrow \mu^-\nu$ cross-sections and the associated charge asymmetry as a function of the absolute pseudorapidity of the decay muon. The data were collected in proton--proton collisions at a centre-of-mass energy of 8 TeV with the ATLAS experiment at the LHC and correspond to a total integrated luminosity of 20.2~\mbox{fb^{-1}}. The precision of the cross-section measurements varies between 0.8% to 1.5% as a function of the pseudorapidity, excluding the 1.9% uncertainty on the integrated luminosity. The charge asymmetry is measured with an uncertainty between 0.002 and 0.003. The results are compared with predictions based on next-to-next-to-leading-order calculations with various parton distribution functions and have the sensitivity to discriminate between them.Comment: 38 pages in total, author list starting page 22, 5 figures, 4 tables, submitted to EPJC. All figures including auxiliary figures are available at https://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PAPERS/STDM-2017-13