Mass formulas and thermodynamic treatment in the mass-density-dependent model of strange quark matter

The previous treatments for strange quark matter in the quark mass-density-dependent model have unreasonable vacuum limits. We provide a method to obtain the quark mass parametrizations and give a self-consistent thermodynamic treatment which includes the MIT bag model as an extreme. In this treatment, strange quark matter in bulk still has the possibility of absolute stability. However, the lower density behavior of the sound velocity is opposite to previous findings.Comment: Formatted in REVTeX 3.1, 5 pages, 3 figures, to appear in PRC6

Development of high-stable contact systems to gallium nitride microwave diodes

High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along with studies of Auger concentration depth profiles in the contacts both before and after rapid thermal annealing. It is found that the Au−TiBx−Al−Ti−GaN contact layers with diffusion barriers retain both a layered structure of the contact metallization and the value of contact resistivity practically unchanged up to the temperature Т ≈ 700 ºС. At the same time, the layered structure of the metallization in standard Au−Ti−Al−Ti−GaN contact systems breaks down at such rapid thermal annealing. It is shown that the contact metallization of both types demonstrates the tunnel current flow mechanism in the temperature range 225−335 K, whereas the current flow mechanism is thermionic in the range 335−380 K, the Schottky barrier height being ~0.16 eV. For the best samples under consideration, the contact resistivity was no more than 10⁻⁶ Ohm∙cm²

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential decrease, as well as those with very slight Pc(T) dependence at higher temperatures. Besides, the Au-Pd-TiPd-n-GaN contacts have a portion of Pc(T) flattening out in the low-temperature region. This portion appears only after rapid thermal annealing (RTA). In principle, its appearance may be caused by preliminary heavy doping of the near-contact region with a shallow donor impurity as well as doping in the course of contact formation owing to RTA, if the contact-forming layer involves a material atoms of which serve as shallow donors in III N compounds. The obtained Pc(T) dependences cannot be explained by the existing mechanisms of current transfer. We propose other mechanisms explaining the experimental Pc(T) curves for ohmic contacts to n - GaN and n -AlN

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact resistivity increases with temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is formed owing to appearance of shunts at Pd deposition on dislocations or other structural defects. The number of shunts per unit area is close to the measured density of structural defects at the metal-Si interface

Role of dislocations in formation of ohmic contacts to heavily doped n-Si

We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for 10 min in a vacuum of ~10 Pa⁻⁴ . These defects lead to appearance of metal shunts that determine the current flow mechanism in these ohmic contacts. The calculated and experimental temperature dependences of contact resistivity, ρс(Т), are in good agreement. It is shown that ρс increases with temperature. This is characteristic of a model of ohmic contacts with a high dislocation density in the near-contact region of semiconducto

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts

We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900°C due to formation of titanium nitride. We studied experimentally and explained theoretically the temperature dependence of contact resistivity ρс(Т) of ohmic contacts in the 4.2-380 K temperature range. The ρс(Т) curve was shown to flatten out in the 4.2-50 K range. As temperature grew, ρс decreased exponentially. The results obtained enabled us to conclude that current flow has field nature at saturation of ρс(Т) and the thermofield nature in the exponential part of ρс(Т) curve

Search for a W' boson decaying to a bottom quark and a top quark in pp collisions at sqrt(s) = 7 TeV

Results are presented from a search for a W' boson using a dataset corresponding to 5.0 inverse femtobarns of integrated luminosity collected during 2011 by the CMS experiment at the LHC in pp collisions at sqrt(s)=7 TeV. The W' boson is modeled as a heavy W boson, but different scenarios for the couplings to fermions are considered, involving both left-handed and right-handed chiral projections of the fermions, as well as an arbitrary mixture of the two. The search is performed in the decay channel W' to t b, leading to a final state signature with a single lepton (e, mu), missing transverse energy, and jets, at least one of which is tagged as a b-jet. A W' boson that couples to fermions with the same coupling constant as the W, but to the right-handed rather than left-handed chiral projections, is excluded for masses below 1.85 TeV at the 95% confidence level. For the first time using LHC data, constraints on the W' gauge coupling for a set of left- and right-handed coupling combinations have been placed. These results represent a significant improvement over previously published limits.Comment: Submitted to Physics Letters B. Replaced with version publishe

BB flavour tagging using charm decays at the LHCb experiment

An algorithm is described for tagging the flavour content at production of neutral $B$ mesons in the LHCb experiment. The algorithm exploits the correlation of the flavour of a $B$ meson with the charge of a reconstructed secondary charm hadron from the decay of the other $b$ hadron produced in the proton-proton collision. Charm hadron candidates are identified in a number of fully or partially reconstructed Cabibbo-favoured decay modes. The algorithm is calibrated on the self-tagged decay modes $B^+ \to J/\psi \, K^+$ and $B^0 \to J/\psi \, K^{*0}$ using $3.0\mathrm{\,fb}^{-1}$ of data collected by the LHCb experiment at $pp$ centre-of-mass energies of $7\mathrm{\,TeV}$ and $8\mathrm{\,TeV}$. Its tagging power on these samples of $B \to J/\psi \, X$ decays is $(0.30 \pm 0.01 \pm 0.01) \%$.Comment: All figures and tables, along with any supplementary material and additional information, are available at http://lhcbproject.web.cern.ch/lhcbproject/Publications/LHCbProjectPublic/LHCb-PAPER-2015-027.htm

Search for the standard model Higgs boson decaying into two photons in pp collisions at sqrt(s)=7 TeV

A search for a Higgs boson decaying into two photons is described. The analysis is performed using a dataset recorded by the CMS experiment at the LHC from pp collisions at a centre-of-mass energy of 7 TeV, which corresponds to an integrated luminosity of 4.8 inverse femtobarns. Limits are set on the cross section of the standard model Higgs boson decaying to two photons. The expected exclusion limit at 95% confidence level is between 1.4 and 2.4 times the standard model cross section in the mass range between 110 and 150 GeV. The analysis of the data excludes, at 95% confidence level, the standard model Higgs boson decaying into two photons in the mass range 128 to 132 GeV. The largest excess of events above the expected standard model background is observed for a Higgs boson mass hypothesis of 124 GeV with a local significance of 3.1 sigma. The global significance of observing an excess with a local significance greater than 3.1 sigma anywhere in the search range 110-150 GeV is estimated to be 1.8 sigma. More data are required to ascertain the origin of this excess.Comment: Submitted to Physics Letters

Measurement of the Lambda(b) cross section and the anti-Lambda(b) to Lambda(b) ratio with Lambda(b) to J/Psi Lambda decays in pp collisions at sqrt(s) = 7 TeV

The Lambda(b) differential production cross section and the cross section ratio anti-Lambda(b)/Lambda(b) are measured as functions of transverse momentum pt(Lambda(b)) and rapidity abs(y(Lambda(b))) in pp collisions at sqrt(s) = 7 TeV using data collected by the CMS experiment at the LHC. The measurements are based on Lambda(b) decays reconstructed in the exclusive final state J/Psi Lambda, with the subsequent decays J/Psi to an opposite-sign muon pair and Lambda to proton pion, using a data sample corresponding to an integrated luminosity of 1.9 inverse femtobarns. The product of the cross section times the branching ratio for Lambda(b) to J/Psi Lambda versus pt(Lambda(b)) falls faster than that of b mesons. The measured value of the cross section times the branching ratio for pt(Lambda(b)) > 10 GeV and abs(y(Lambda(b))) < 2.0 is 1.06 +/- 0.06 +/- 0.12 nb, and the integrated cross section ratio for anti-Lambda(b)/Lambda(b) is 1.02 +/- 0.07 +/- 0.09, where the uncertainties are statistical and systematic, respectively.Comment: Submitted to Physics Letters