Bingham sealing and application in vacuum clamping

Vacuum clamping is extensively used in shell machining. In this paper a Bingham Sealing (BS) is presented and formulized based on Bingham plastic performance. The sealing capability of BS is evaluated in various cases. A new Bingham plastic is developed and the yield stress is measured. The performances of "O"ring sealing and BS with the developed Bingham plastic are compared to the static experiment. In this experiment the same vacuum is achieved and the distortion of the blade with BS is better than that with "O" ring sealing

Fabrication of Highly Ordered Nanoparticle Arrays Using Thin Porous Alumina Masks

Highly ordered nanoparticle arrays have been successfully fabricated by our group recently using ultra-thin porous alumina membranes as masks in the evaporation process. The sizes of the nanoparticles can be adjusted from 5-10 nm to 200 nm while the spacing between adjacent particles can also be adjusted from several nanometers to about twice the size of a nanoparticle. The configuration of the nanoparticles can be adjusted by changing the height of the alumina masks and the evaporation direction. Due to the high pore regularity and good controllability of the particle size and spacing, this method is useful for the ordered growth of nanocrystals. Different kinds of nanoparticle arrays have been prepared on silicon wafer including semiconductors (e.g., germanium) and metals (e.g., nickel). The germanium nanoparticle arrays have potential applications in memory devices while the nickel catalyst nanoparticle arrays can be used for the growth of ordered carbon nanotubes.Singapore-MIT Alliance (SMA

Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals

A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was fabricated on a p-type Si substrate. The MIS device was rapid thermal annealed at 1000°C. Capacitance-voltage (C-V) measurements showed that, after rapid thermal annealing at 1000°C for 300s in Ar, the trilayer device exhibited charge storage property. The charge storage effect was not observed in a device with a bilayer structure without the Ge middle layer. With increasing rapid thermal annealing time from 0 to 400s, the width of the C-V hysteresis of the trilayer device increased significantly from 1.5V to ~11V, indicating that the charge storage capability was enhanced with increasing annealing time. High-resolution transmission electron microscopy results confirmed that with increasing annealing time, the 2.4nm amorphous middle Ge layer crystallized gradually. More Ge nanocrystals were formed and the crystallinity of the Ge layer improved as the annealing time was increased. When the measurement temperature was increased from –50°C to 150°C, the width of the hysteresis of the MIS device reduced from ~10V to ~6V. This means that the charge storage capability of the trilayer structure decreases with increasing measurement temperature. This is due to the fact that the leakage current in the trilayer structure increases with increasing measurement temperature.Singapore-MIT Alliance (SMA

Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness

The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer metal-insulator-semiconductor device was studied. We found that the RTO and the capping oxide layers were not totally effective in confining the Ge nanocrystals in the middle layer when a pure Ge middle layer was used for the formation of nanocrystals. From the transmission electron microscopy and secondary ion mass spectroscopy results, a significant diffusion of Ge atoms through the RTO and into the silicon (Si) substrate was observed when the RTO layer thickness was reduced to 2.5 nm. This resulted in no (or very few) nanocrystals formed in the system. For devices with a Ge+SiO₂ co-sputtered middle layer (i.e., lower Ge concentration), a higher charge storage capability was obtained than with devices with a thinner RTO layer, and the charge retention time was found to be less than in devices with a thicker RTO layer.Singapore-MIT Alliance (SMA

Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices

A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation (RTO), followed by a layer of Ge+SiO₂ of varying thickness (6 - 20 nm) deposited using the radio frequency (r.f.) co-sputtering technique and a SiO₂ cap layer (50nm) deposited using r.f. sputtering, was investigated. It was verified using TEM that germanium nanocrystals of sizes ranging from 6 – 20 nm were successfully fabricated after thermal annealing of the tri-layer structure under suitable conditions. The nanocrystals were found to be well confined by the RTO SiO₂ and the cap SiO₂ under specific annealing conditions. The electrical properties of the tri-layer structure have been characterized using MOS capacitor test devices. A significant hysteresis can be observed from the C-V measurements and this suggests the charge storage capability of the nanocrystals. The proposed technique has the potential for fabricating memory devices with controllable nanocrystals sizes.Singapore-MIT Alliance (SMA

Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device

A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon dioxide (SiO₂) layer grown using rapid thermal oxidation (RTO), followed by a layer of Ge+SiO₂ of varying thickness (3 - 6 nm) deposited using a radio frequency (rf) co-sputtering technique, and a capping SiO₂ layer (50nm) deposited using rf sputtering is investigated. It was verified that the size of germanium (Ge) nanocrystals in the vertical z-direction in the trilayer memory device was controlled by varying the thickness of the middle (cosputtered Ge+SiO₂) layer. From analyses using transmission electron microscopy and capacitance-voltage measurements, we deduced that both electrons and holes are most likely stored within the nanocrystals in the middle layer of the trilayer structure rather than at the interfaces of the nanocrystals with the oxide matrix.Singapore-MIT Alliance (SMA

Search for heavy resonances decaying to two Higgs bosons in final states containing four b quarks

A search is presented for narrow heavy resonances X decaying into pairs of Higgs bosons (H) in proton-proton collisions collected by the CMS experiment at the LHC at root s = 8 TeV. The data correspond to an integrated luminosity of 19.7 fb(-1). The search considers HH resonances with masses between 1 and 3 TeV, having final states of two b quark pairs. Each Higgs boson is produced with large momentum, and the hadronization products of the pair of b quarks can usually be reconstructed as single large jets. The background from multijet and t (t) over bar events is significantly reduced by applying requirements related to the flavor of the jet, its mass, and its substructure. The signal would be identified as a peak on top of the dijet invariant mass spectrum of the remaining background events. No evidence is observed for such a signal. Upper limits obtained at 95 confidence level for the product of the production cross section and branching fraction sigma(gg -> X) B(X -> HH -> b (b) over barb (b) over bar) range from 10 to 1.5 fb for the mass of X from 1.15 to 2.0 TeV, significantly extending previous searches. For a warped extra dimension theory with amass scale Lambda(R) = 1 TeV, the data exclude radion scalar masses between 1.15 and 1.55 TeV

Measurement of the top quark mass using charged particles in pp collisions at root s=8 TeV

Peer reviewe

SHEAR WAVE ELASTOGRAPHY AS A NON-INVASIVE MARKER OF RENAL FIBROSIS IN NATIVE DIABETIC KIDNEY DISEASE

Nephrology Dialysis Transplantation35suppl 3522-52

GOING TO WAR ON COVID19: MOBILIZING AN ACADEMIC NEPHROLOGY GROUP PRACTICE

10.1111/nep.13753Nephrolog