Temple building on the Egyptian margins: the geopolitical issues behind Seti II and Ramesses IX’s activity at Amheida

Middle Eastern Studie

Apport de la modélisation bayésienne par ChronoModel à la datation de la tombe de Gunsa

International audienc

Study of Oxidation Mechanisms in Ge-rich GeSbTe: Structural Evolution in Temperature and N Doping Impact

International audienc

The ecological significance of manipulative parasites

The diversity of ways in which host manipulation by parasites interferes with ecological and evolutionary processes governing biotic interactions has been recently documented, and indicates that manipulative parasites are full participants in the functioning of ecosystems. Phenotypic alterations in parasitised hosts modify host population ecology, apparent competition processes, food web structure and energy and nutrient flow between habitats, as well as favouring habitat creation. As is usually the case in ecology, these phenomena can be greatly amplified by a series of secondary consequences (cascade effects). Here we review the ecological relevance of manipulative parasites in ecosystems and propose directions for further research

Oxidation Process in Ge-Rich GeSbTe Alloy for Phase-Change Memory: Mechanism, Kinetic and N-Doping Influence

International audienc

Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

International audienc

Elaboration Strategies for Topographically Selective Deposition (TSD) on 3D structures

International audienc

In-situ stripping of native SiO2 for Area Selective Deposition (ASD) of TiN during Plasma Atomic Layer Deposition (PEALD)

International audienc

Surface Oxidation phenomena in Ge-rich GeSbTe alloys and N doping influence for Phase-Change Memory applications

International audienc

Structural defects improve the memristive characteristics of epitaxial La0.8_{0.8}Sr0.2_{0.2}MnO3−δ_ {3-\delta} based devices

International audienceInterface-type valence change memories (VCMs) are exciting candidates for multilevel storage in resistive random access memories (RRAM) and as artificial synapses for neuromorphic computing. Several materials have been proposed as VCM candidates and, depending on the materials and electrodes of choice, different switching mechanisms take place leading to the change in resistance. Here, the focus is on La$_{0.8}$Sr$_{0.2}$MnO$_ {3-\delta}$ (LSM) perovskite and, particularly, the role of its nanostructure on the memristive device performance. The nanostructural details of the layers are modified by growing LSM epitaxial thin films on different substrates, i.e., SrTiO$_3$ (STO) and LaAlO$_3$ (LAO), by metal-organic chemical vapor deposition (MOCVD). An interfacetype memristive response is observed using Ti as active electrode and Pt as inert electrode. The modifications in the nanostructure of LSM (strain and dislocations) determine the memristive performance, leading to differences in cycle to cycle reproducibility and multilevel capabilities by the modification of the LSM’s oxygen migration properties. The results show that nanostructure engineering is a promising approach for optimizing the performance of memristive devices, an approach which can also be extended and applied to other nanoionic electrochemical devices