Low temperature magnetoresistance of dirty thin films and quantum wires near a parallel-field-tuned superconducting quantum phase transition

We study the low temperature magnetoresistance of dirty thin films and quantum wires close to a quantum phase transition from a superconducting to normal state, induced by applying a parallel magnetic field. We find that the different corrections (Aslamazov-Larkin, density of states and Maki-Thompson) to the normal state conductivity, coming from the superconducting pair fluctuations, are of the same order at zero temperature. There are three regimes at finite temperatures. In the "quantum" regime, which essentially shows a zero-temperature-like behavior we find a negative magnetoresistance. Since in the "classical" regime the correction is positive, we predict a non-monotonic magnetoresistance at higher temperatures.Comment: Proceedings for SCES conference (2004

Surfactant Free Synthesis and Study of Vanadium Pentoxide Nanostructure

The varied oxidation state and layered structure are two importance features of vanadium pentoxide which makes it more special. Here, vanadium pentoxide nanostructure has been synthesized by a surfactant free and ecofriendly method using ammonium vanadate as a precursor salt. Synthesized nanostructure were characterized using X-ray diffraction method (XRD), Energy Dispersive X-Ray Analysis (EDAX), Scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR) and UV-Visible spectroscopy to study its structural, compositional, morphology, vibrational modes and optical behavior. XRD and FTIR confirm the orthorhombic phase of the vanadium pentoxide with a layered structure of irregular plates as observed from the SEM micrograph. Moreover, the band gap of material is 2.13 eV as evaluated from UV-Visible data

A rat model against chemotherapy plus radiation-induced oral mucositis

AbstractObjectivesPresent study was aimed at developing an experimental model of oral mucositis in rats using a combination of chemotherapeutic agent and radiation.Study designFemale Wistar rats (150–200g) were divided into 3 groups (n=6). Rats in group 1 (normal control) and group 2 (mucositis control) were treated with vehicle. Rats in group 3 were treated with l-glutamine (1g/kg, p.o.; 15days) before and after mucositis induction. Oral mucositis was induced by busulfan (6mg/kg, p.o.; 4days) and the tongue exposed to infrared (IR) radiation of intensity 40mV/cm2 for 5 s on the 1st, 4th and 10th days of challenge using a tail flick apparatus. Parameters monitored were body weight, food intake, blood count and survival. Oral mucositis score (OMS) was recorded daily. Histological changes of the irradiated tongue were assessed by hematoxylin and eosin staining.ResultsBusulfan and IR radiation significantly reduced body weight and food intake of the mucositis control group as compared to normal control. Clear ulceration of the tongue reflected in the OMS. Histopathology of the tongue revealed intense lymphocytic infiltration, decreased thickness of squamous epithelial cell layer, decrease in number of blood vessels, and necrosis of cells along with pseudo-membrane formation in the mucositis control group. These findings suggested that oral mucositis was successfully induced and treatment with l-glutamine partially reversed these conditions.ConclusionOral mucositis was established successfully in rats by the combination of chemotherapeutic agent and IR radiation. This may be a useful model for screening drugs in the treatment of oral mucositis

Deposition and Characterization of Indium Selenide Thin Films for Opto-electronic Devices

Amongst all the III-VI semiconductors, ones that crystallize with a layered structure have gained special interest due to its significant usage in photovoltaic devices. III-VI layered semiconductor such as InSe has low density of dangling bonds on its surface therefore it is considered as vital material for the fabrication of opto-electronic devices like photo sensor, solar cell etc. In present work, InSe thin films were fabricated through a simple and facile drop-casting method, where the thin films were drop-casted between two silver paste electrodes on a glass substrate. The structural, surface morphological, compositional, electrical and optical properties of the prepared films were obsrved by XRD, SEM, EDAX, high precision digital multi-meter and UV-visible spectroscopy, respectively. XRD analysis of the prepared film shows the existence of nano-crystalline nature with monoclinic crystal structure of InSe. SEM images show good continuity of InSe film. InSe thin films are n-type with bandgap of 1.8 eV and their electrical conductivity is in the order of 10 – 10 S/cm that makes them appropriate for using as an absorber layer in the solar cell

Fermi-edge singularities in linear and non-linear ultrafast spectroscopy

We discuss Fermi-edge singularity effects on the linear and nonlinear transient response of an electron gas in a doped semiconductor. We use a bosonization scheme to describe the low energy excitations, which allows to compute the time and temperature dependence of the response functions. Coherent control of the energy absorption at resonance is analyzed in the linear regime. It is shown that a phase-shift appears in the coherent control oscillations, which is not present in the excitonic case. The nonlinear response is calculated analytically and used to predict that four wave-mixing experiments would present a Fermi-edge singularity when the exciting energy is varied. A new dephasing mechanism is predicted in doped samples that depends linearly on temperature and is produced by the low-energy bosonic excitations in the conduction band.Comment: long version; 9 pages, 4 figure

Coupled free-carrier and exciton relaxation in optically excited semiconductors

The energy relaxation of coupled free-carrier and exciton populations in semiconductors after low-density ultrafast optical excitation is studied through a kinetic approach. The set of semiclassical Boltzmann equations, usually written for electron and hole populations only, is complemented by an additional equation for the exciton distribution. The equations are coupled by reaction terms describing phonon-mediated exciton binding and dissociation. All the other relevant scattering mechanisms, such as carrier-carrier, carrier-phonon, and exciton-phonon interactions, are also included. The resulting system of rate equations in reciprocal space is solved by an extended ensemble Monte Carlo method. As a first application, we show results for the dynamics of bulk GaAs in the range from 1 to ∼200 ps after photoexcitation. The build-up of an exciton population and its sensitivity to the excitation conditions are discussed in detail. As a consequence of the pronounced energy dependence of the LO-phonon-assisted transition probabilities between free-pair states and excitons, it is found that the efficiency of the exciton-formation process and the temporal evolution of the resulting population are sensitive to the excitation energy. We discuss the effects on luminescence experiments

A CHIME/FRB Study of Burst Rate and Morphological Evolution of the Periodically Repeating FRB 20180916B

FRB 20180916B is a repeating fast radio burst (FRB) with a 16.3 day periodicity in its activity. In this study, we present morphological properties of 60 FRB 20180916B bursts detected by CHIME/FRB between 2018 August and 2021 December. We recorded raw voltage data for 45 of these bursts, enabling microseconds time resolution in some cases. We studied variation of spectro-temporal properties with time and activity phase. We find that the variation in dispersion measure (DM) is ≲1 pc cm−3 and that there is burst-to-burst variation in scattering time estimates ranging from ∼0.16 to over 2 ms, with no discernible trend with activity phase for either property. Furthermore, we find no DM and scattering variability corresponding to the recent change in rotation measure from the source, which has implications for the immediate environment of the source. We find that FRB 20180916B has thus far shown no epochs of heightened activity as have been seen in other active repeaters by CHIME/FRB, with its burst count consistent with originating from a Poissonian process. We also observe no change in the value of the activity period over the duration of our observations and set a 1σ upper limit of 1.5 × 10−4 day day−1 on the absolute period derivative. Finally, we discuss constraints on progenitor models yielded by our results, noting that our upper limits on changes in scattering and DM as a function of phase do not support models invoking a massive binary companion star as the origin of the 16.3 day periodicity.</p

Measurement of the polarisation of W bosons produced with large transverse momentum in pp collisions at sqrt(s) = 7 TeV with the ATLAS experiment

This paper describes an analysis of the angular distribution of W->enu and W->munu decays, using data from pp collisions at sqrt(s) = 7 TeV recorded with the ATLAS detector at the LHC in 2010, corresponding to an integrated luminosity of about 35 pb^-1. Using the decay lepton transverse momentum and the missing transverse energy, the W decay angular distribution projected onto the transverse plane is obtained and analysed in terms of helicity fractions f0, fL and fR over two ranges of W transverse momentum (ptw): 35 < ptw < 50 GeV and ptw > 50 GeV. Good agreement is found with theoretical predictions. For ptw > 50 GeV, the values of f0 and fL-fR, averaged over charge and lepton flavour, are measured to be : f0 = 0.127 +/- 0.030 +/- 0.108 and fL-fR = 0.252 +/- 0.017 +/- 0.030, where the first uncertainties are statistical, and the second include all systematic effects.Comment: 19 pages plus author list (34 pages total), 9 figures, 11 tables, revised author list, matches European Journal of Physics C versio

Observation of a new chi_b state in radiative transitions to Upsilon(1S) and Upsilon(2S) at ATLAS

The chi_b(nP) quarkonium states are produced in proton-proton collisions at the Large Hadron Collider (LHC) at sqrt(s) = 7 TeV and recorded by the ATLAS detector. Using a data sample corresponding to an integrated luminosity of 4.4 fb^-1, these states are reconstructed through their radiative decays to Upsilon(1S,2S) with Upsilon->mu+mu-. In addition to the mass peaks corresponding to the decay modes chi_b(1P,2P)->Upsilon(1S)gamma, a new structure centered at a mass of 10.530+/-0.005 (stat.)+/-0.009 (syst.) GeV is also observed, in both the Upsilon(1S)gamma and Upsilon(2S)gamma decay modes. This is interpreted as the chi_b(3P) system.Comment: 5 pages plus author list (18 pages total), 2 figures, 1 table, corrected author list, matches final version in Physical Review Letter

Search for displaced vertices arising from decays of new heavy particles in 7 TeV pp collisions at ATLAS

We present the results of a search for new, heavy particles that decay at a significant distance from their production point into a final state containing charged hadrons in association with a high-momentum muon. The search is conducted in a pp-collision data sample with a center-of-mass energy of 7 TeV and an integrated luminosity of 33 pb^-1 collected in 2010 by the ATLAS detector operating at the Large Hadron Collider. Production of such particles is expected in various scenarios of physics beyond the standard model. We observe no signal and place limits on the production cross-section of supersymmetric particles in an R-parity-violating scenario as a function of the neutralino lifetime. Limits are presented for different squark and neutralino masses, enabling extension of the limits to a variety of other models.Comment: 8 pages plus author list (20 pages total), 8 figures, 1 table, final version to appear in Physics Letters