Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (V$_o$) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two V$_o$ states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient indicating a clear role of atmospheric O$_2$ on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs

Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks

A microscopic picture for the progressive leakage current growth in electrically stressed HfxSi1−xON/SiON gate stacks in metal-oxide-semiconductor transistors based on the physics of mesoscopic conductors is proposed. The breakdown spot is modeled as a nanoconstriction connecting two electron reservoirs. We show that after eliminating the tunnelingcurrent component that flows through the nondamaged device area, the postbreakdown conductance exhibits levels of the order of the quantum unit 2e2/h, where e is the electron charge and h the Planck's constant, as is expected for atomic-sized contacts. Similarities and differences with previous studied systems are discussed

Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibited remarkable diode behavior and good rectifying character with low leakage current under reverse bias. The presence of the ZnO interlayer film significantly reduced the parasitic and leakage currents across the barrier, improved the quality of the heterostructure, made the energy band between AZO and Cu2O layers smoother, and eliminated the possibility of interface recombination, leading to much longer electron lifetime

Light harvesting with Ge quantum dots embedded in SiO2or Si3N4

Germanium quantum dots (QDs) embedded in SiO2or in Si3N4have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850°C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 3-9 nm range in the SiO2matrix, or in the 1-2 nm range in the Si3N4matrix, as measured by transmission electron microscopy. Thus, Si3N4matrix hosts Ge QDs at higher density and more closely spaced than SiO2matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si3N4matrix in comparison with those in the SiO2host. Light absorption by Ge QDs is shown to be more effective in Si3N4matrix, due to the optical bandgap (0.9-1.6 eV) being lower than in SiO2matrix (1.2-2.2 eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si3N4matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices. © 2014 AIP Publishing LLC

Single hadron response measurement and calorimeter jet energy scale uncertainty with the ATLAS detector at the LHC

The uncertainty on the calorimeter energy response to jets of particles is derived for the ATLAS experiment at the Large Hadron Collider (LHC). First, the calorimeter response to single isolated charged hadrons is measured and compared to the Monte Carlo simulation using proton-proton collisions at centre-of-mass energies of sqrt(s) = 900 GeV and 7 TeV collected during 2009 and 2010. Then, using the decay of K_s and Lambda particles, the calorimeter response to specific types of particles (positively and negatively charged pions, protons, and anti-protons) is measured and compared to the Monte Carlo predictions. Finally, the jet energy scale uncertainty is determined by propagating the response uncertainty for single charged and neutral particles to jets. The response uncertainty is 2-5% for central isolated hadrons and 1-3% for the final calorimeter jet energy scale.Comment: 24 pages plus author list (36 pages total), 23 figures, 1 table, submitted to European Physical Journal

Standalone vertex finding in the ATLAS muon spectrometer

A dedicated reconstruction algorithm to find decay vertices in the ATLAS muon spectrometer is presented. The algorithm searches the region just upstream of or inside the muon spectrometer volume for multi-particle vertices that originate from the decay of particles with long decay paths. The performance of the algorithm is evaluated using both a sample of simulated Higgs boson events, in which the Higgs boson decays to long-lived neutral particles that in turn decay to bbar b final states, and pp collision data at √s = 7 TeV collected with the ATLAS detector at the LHC during 2011

Measurements of Higgs boson production and couplings in diboson final states with the ATLAS detector at the LHC

Measurements are presented of production properties and couplings of the recently discovered Higgs boson using the decays into boson pairs, H →γ γ, H → Z Z∗ →4l and H →W W∗ →lνlν. The results are based on the complete pp collision data sample recorded by the ATLAS experiment at the CERN Large Hadron Collider at centre-of-mass energies of √s = 7 TeV and √s = 8 TeV, corresponding to an integrated luminosity of about 25 fb−1. Evidence for Higgs boson production through vector-boson fusion is reported. Results of combined fits probing Higgs boson couplings to fermions and bosons, as well as anomalous contributions to loop-induced production and decay modes, are presented. All measurements are consistent with expectations for the Standard Model Higgs boson

Measurement of the top quark-pair production cross section with ATLAS in pp collisions at \sqrt{s}=7\TeV

A measurement of the production cross-section for top quark pairs(\ttbar) in $pp$ collisions at \sqrt{s}=7 \TeV is presented using data recorded with the ATLAS detector at the Large Hadron Collider. Events are selected in two different topologies: single lepton (electron $e$ or muon $\mu$) with large missing transverse energy and at least four jets, and dilepton ($ee$, $\mu\mu$ or $e\mu$) with large missing transverse energy and at least two jets. In a data sample of 2.9 pb-1, 37 candidate events are observed in the single-lepton topology and 9 events in the dilepton topology. The corresponding expected backgrounds from non-\ttbar Standard Model processes are estimated using data-driven methods and determined to be $12.2 \pm 3.9$ events and $2.5 \pm 0.6$ events, respectively. The kinematic properties of the selected events are consistent with SM \ttbar production. The inclusive top quark pair production cross-section is measured to be \sigmattbar=145 \pm 31 ^{+42}_{-27} pb where the first uncertainty is statistical and the second systematic. The measurement agrees with perturbative QCD calculations.Comment: 30 pages plus author list (50 pages total), 9 figures, 11 tables, CERN-PH number and final journal adde