Low-Voltage Circuit-Breaker Behavior under Overload Conditions

This article deals with temperature-rise of current path of modern low-voltage circuit-breaker with rotary contact system at overloads and subsequent experimental verification of selected model. The first part describes optimal setting of input conditions of simulation and mainly transient phenomena at contacts causing dynamic change of contact resistances due to change of total contact force, a new challenge to be solved in this contribution. The second part devotes laboratory measurement on prepared sample of the breaker for verification of transient simulation. These simulations are not only important for understanding of rotary system behavior under overloads, but forms an essential part of R & D process due to the speed-up of optimal current path design. In the end, both the financial costs and time effort could be decreased

Investigation of top mass measurements with the ATLAS detector at LHC

Several methods for the determination of the mass of the top quark with the ATLAS detector at the LHC are presented. All dominant decay channels of the top quark can be explored. The measurements are in most cases dominated by systematic uncertainties. New methods have been developed to control those related to the detector. The results indicate that a total error on the top mass at the level of 1 GeV should be achievable.Comment: 47 pages, 40 figure

Investigation and Numerical Simulation of a High-Current AC Circuit Breaker

The article is devoted to the study of the high-current AC circuit breaker. The results of the study are presented for various configurations of the arc divider. The study includes methods of spectral diagnostics and high-speed camera shooting synchronized with the electrical characteristics of the circuit breaker (current, voltage) in time. The obtained results allow to determine the composition of the plasma and dynamics of changes in the composition of the discharge in time. Calculation of the plasma composition and properties is made according to the obtained data, which makes it possible to take into account the products of circuit breaker materials ablation in numerical simulation. Non-stationary two-dimensional mathematical model with a moving mesh is developed. The obtained results allow to correct and verify the developed mathematical model of the circuit breaker operation. The evaluation of the arc divider influence is presented in the article

Rotating Gliding Arc: Innovative Source for VOC Remediation

The large-scale plasma treatment of waste gas in industrial or municipal conditions requires high efficiency of plasma conversion process at high processing speed, i.e., large volumetric flow. The integration of the plasma unit into existing systems puts demands on the pipe-system compatibility and minimal pressure drop due to adoption of plasma processing step. These conditions are met at the innovative rotating electrode gliding arc plasma unit described in this article. The system consists of propeller-shaped high voltage electrode inside grounded metallic tube. The design of HV electrode eliminates the pressure drop inside the air system, contrary the plasma unit itself is capable of driving the waste gas at volumetric flow up to 300 m3/hr for 20 cm pipe diameter. In the article the first results on pilot study of waste air treatment will be given for selected volatile organic compounds together with basic characteristic of the plasma unit used

Optical emission from Si O2 -embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study

© 2015 American Physical Society. We investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the optical emission of the Si NCs/SiO2. The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride (SRON)/SiO2 multilayers with 5- and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150°C, which resulted in the precipitation of Si NCs with an average size of 4.1 and 3.3 nm, respectively. From the pressure dependence of the Raman spectra we extract a phonon pressure coefficient of 8.5±0.3cm-1/GPa in both samples, notably higher than that of bulk Si(5.1cm-1/GPa). This result is ascribed to a strong pressure amplification effect due to the larger compressibility of the SiO2 matrix. In turn, the PL spectra exhibit two markedly different contributions: a higher-energy band that redshifts with pressure, and a lower-energy band which barely depends on pressure and which can be attributed to defect-related emission. The pressure coefficients of the higher-energy contribution are (-27±6) and (-35±8)meV/GPa for the Si NCs with a size of 4.1 and 3.3 nm, respectively. These values are sizably higher than those of bulk Si(-14meV/GPa). When the pressure amplification effect observed by Raman scattering is incorporated into the analysis of the PL spectra, it can be concluded that the pressure behavior of the high-energy PL band is consistent with that of the indirect transition of Si and, therefore, with the quantum-confined model for the emission of the Si NCs.Work supported by the European Community’s Seventh Framework Programme (FP7/2007-2013) under grant agreement No. 245977 (project NASCEnT). Financial support by the Spanish Government through projects LEOMIS (TEC2012-38540-C02-01) and MAT2012-38664-C02-02 is also acknowledgedPeer Reviewe

Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study

We investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the optical emission of the Si NCs/SiO2. The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride (SRON)/SiO2 multilayers with 5- and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150 °C, which resulted in the precipitation of Si NCswith an average size of 4.1 and 3.3 nm, respectively. From the pressure dependence of the Raman spectra we extract a phonon pressure coefficient of 8.5 ± 0.3 cm−1/GPa in both samples, notably higher than that of bulk Si (5.1 cm−1/GPa). This result is ascribed to a strong pressure amplification effect due to the larger compressibility of the SiO2 matrix. In turn, the PL spectra exhibit two markedly different contributions: a higher-energy band that redshifts with pressure, and a lower-energy band which barely depends on pressure and which can be attributed to defect-related emission. The pressure coefficients of the higher-energy contribution are (−27 ± 6) and (−35 ± 8) meV/GPa for the Si NCs with a size of 4.1 and 3.3 nm, respectively. These values are sizably higher than those of bulk Si (−14 meV/GPa). When the pressure amplification effect observed by Raman scattering is incorporated into the analysis of the PL spectra, it can be concluded that the pressure behavior of the high-energy PL band is consistent with that of the indirect transition of Si and, therefore, with the quantum-confined model for the emission of the Si NCs

Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects

Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger recombination. In addition, the holes should allow for a non-transient electrical current. However, on the bottom end of the nanoscale, both substitutional incorporation and ionization are subject to significant increase in their respective energies due to confinement and size effects. Nevertheless, successful B-doping of Si nanocrystals was reported for certain structural conditions. Here, we investigate B-doping for small, well-dispersed Si nanocrystals with low and moderate B-concentrations. While small amounts of B-atoms are incorporated into these nanocrystals, they hardly affect their optical or electrical properties. If the B-concentration exceeds ~1 at%, the luminescence quantum yield is significantly quenched, whereas electrical measurements do not reveal free carriers. This observation suggests a photoluminescence quenching mechanism based on B-induced defect states. By means of density functional theory calculations, we prove that B creates multiple states in the bandgap of Si and SiO2. We conclude that non-percolated ultra-small Si nanocrystals cannot be efficiently B-doped