Window Layers for Silicon Heterojunction Solar Cells:Properties and Impact on Device Performance

Currently, crystalline silicon (c-Si) wafer-based solar cells dominate the photovoltaic market (80-90%). In this thesis we concentrate on silicon heterojunction (SHJ) solar cells that--in contrast to diffused homojunction cells--rely on the application of amorphous silicon (a-Si:H) thin films. Unlike standard homojunction devices, which are typically limited by their highly recombination-active semiconductor-to-metal contacts, SHJ devices exhibit excellent surface passivation enabled by intrinsic and doped a-Si:H films. These a-Si:H layers, however, entail drawbacks for optical performance and carrier transport, two topics that will be addressed in this work. To this end we investigate non-traditional materials for SHJ devices, with the goal of replacing the a-Si:H or the transparent electrodes. These materials include microcrystalline silicon (uc-Si:H) and organic semiconductors for contact formation; amorphous silicon suboxides (a-SiOx:H) for surface passivation; and transparent electrodes applied by atomic layer deposition (ALD) as protective layers against subsequent processing steps. Along with the optical and electrical properties of these materials, we study the impact on device performance associated with their deposition. For this we test the devices under standard testing conditions (25 °C) and at elevated temperatures closer to those encountered in the field. For the investigations on uc-Si:H layers, we vary process parameters (including temperature, pressure, power, excitation frequency and hydrogen dilution) as well as pre-treatments, gas variations and nucleation layers. We assess the suitability of these approaches for SHJ solar cells and apply selected measures in devices. Thereby we demonstrate a gain in short-circuit current density in the range of 0.5-1 mA.cm-2 and good fill factor values of up to 79.2% using either n- and p-type uc-Si:H layers. Furthermore, with the goal of reducing optical losses, we test wide-bandgap a-SiOx:H layers for passivation. In terms of current gain without negative side effects on transport, we argue that these layers are best applied to the electron-collecting contact--put at the front of the device--as their application to the hole-collecting contact introduces a transport barrier for holes. This barrier deteriorates the device performance at 25 °C, but shows a beneficial effect on the temperature coefficient of the device, yielding coefficients as low as -0.1%/°C. In some cases--compared to standard devices--devices with a-SiOx:H layers exhibit superior performance at elevated temperatures, which can be of interest in warmer climates. In parallel to these main topic we also study aluminium-doped zinc oxide (ZnO:Al) layers deposited by ALD as a protective layer against sputter-induced damage and organic semiconductors as transparent electrodes for the hole-collecting contact. In both cases we observe a gain in terms of surface passivation, which indicates that these materials may be beneficial for the contact formation in future device structures. In addition to these material-related investigations, we unravel the temperature-dependence of each individual cell parameter and present a brief comparison of state-of-the-art technologies and their respective temperature dependence

Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

In amorphous/crystalline silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous silicon films by wider bandgap amorphous silicon oxide layers. In this article, we use stacks of intrinsic amorphous silicon and amorphous silicon oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm2 due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit voltages can be maintained, thanks to good interface passivation. However, we find that the gain in current is more than offset by losses in fill factor. Aided by device simulations, we link these losses to impeded carrier collection fundamentally caused by the increased valence band offset at the amorphous/crystalline interface. Despite this, carrier extraction can be improved by raising the temperature; we find that cells with amorphous silicon oxide window layers show an even lower temperature coefficient than reference heterojunction solar cells (-0.1%/K relative drop in efficiency, compared to -0.3%/K). Hence, even though cells with oxide layers do not outperform cells with the standard design at room temperature, at higher temperatures—which are closer to the real working conditions encountered in the field—they show superior performance in both experiment and simulation

Silicon heterojunction solar cells on n- and p-type wafers with efficiencies above 20%

A systematic comparison of front- and rear-emitter silicon heterojunction solar cells produced on nand p-type wafers was performed, in order to investigate their potential and limitations for high efficiencies. Cells on p-type wafers suffer from reduced minority carrier lifetime in the low-carrier-injection range, mainly due to the asymmetry in interface defect capture cross sections. This leads to slightly lower fill factors than for n-type cells. However, these losses can be minimized by using high-quality passivation layers. High Vocs were obtained on both types of FZ wafers: up to 735 mV on n- and 726 mV on p-type. The best Voc measured on CZ p-type wafers was only 692 mV, whereas it reached 732 mV on CZ n-type. The highest aperture-area certified efficiencies obtained on 4 cm2 cells were 22.14% (Voc=727 mV, FF=78.4%) and 21.38% (Voc=722 mV, FF=77.1%) on n- and p-type FZ wafers, respectively, demonstrating that heterojunction schemes can perform almost as well on high-quality p-type as on ntype wafers. To our knowledge, this is the highest efficiency for a full silicon heterojunction solar cell on a p-type wafer, and the highest Voc on any p-type crystalline silicon device with reasonable FF

21% efficiency silicon heterojunction solar cells produced with very high frequency PECVD

Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ plasma diagnostics and ex-situ film characterization, we show that the best a-Si:H films for passivation are produced from deposition regimes close to the amorphous-to-crystalline transition. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells. 4 cm2 solar cells were produced with fully industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21%

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. Based on our findings, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells

Optimasi Portofolio Resiko Menggunakan Model Markowitz MVO Dikaitkan dengan Keterbatasan Manusia dalam Memprediksi Masa Depan dalam Perspektif Al-Qur`an

Risk portfolio on modern finance has become increasingly technical, requiring the use of sophisticated mathematical tools in both research and practice. Since companies cannot insure themselves completely against risk, as human incompetence in predicting the future precisely that written in Al-Quran surah Luqman verse 34, they have to manage it to yield an optimal portfolio. The objective here is to minimize the variance among all portfolios, or alternatively, to maximize expected return among all portfolios that has at least a certain expected return. Furthermore, this study focuses on optimizing risk portfolio so called Markowitz MVO (Mean-Variance Optimization). Some theoretical frameworks for analysis are arithmetic mean, geometric mean, variance, covariance, linear programming, and quadratic programming. Moreover, finding a minimum variance portfolio produces a convex quadratic programming, that is minimizing the objective function ðð¥with constraintsð ð 𥠥 ðandð´ð¥ = ð. The outcome of this research is the solution of optimal risk portofolio in some investments that could be finished smoothly using MATLAB R2007b software together with its graphic analysis

Impacts of the Tropical Pacific/Indian Oceans on the Seasonal Cycle of the West African Monsoon

The current consensus is that drought has developed in the Sahel during the second half of the twentieth century as a result of remote effects of oceanic anomalies amplified by local land–atmosphere interactions. This paper focuses on the impacts of oceanic anomalies upon West African climate and specifically aims to identify those from SST anomalies in the Pacific/Indian Oceans during spring and summer seasons, when they were significant. Idealized sensitivity experiments are performed with four atmospheric general circulation models (AGCMs). The prescribed SST patterns used in the AGCMs are based on the leading mode of covariability between SST anomalies over the Pacific/Indian Oceans and summer rainfall over West Africa. The results show that such oceanic anomalies in the Pacific/Indian Ocean lead to a northward shift of an anomalous dry belt from the Gulf of Guinea to the Sahel as the season advances. In the Sahel, the magnitude of rainfall anomalies is comparable to that obtained by other authors using SST anomalies confined to the proximity of the Atlantic Ocean. The mechanism connecting the Pacific/Indian SST anomalies with West African rainfall has a strong seasonal cycle. In spring (May and June), anomalous subsidence develops over both the Maritime Continent and the equatorial Atlantic in response to the enhanced equatorial heating. Precipitation increases over continental West Africa in association with stronger zonal convergence of moisture. In addition, precipitation decreases over the Gulf of Guinea. During the monsoon peak (July and August), the SST anomalies move westward over the equatorial Pacific and the two regions where subsidence occurred earlier in the seasons merge over West Africa. The monsoon weakens and rainfall decreases over the Sahel, especially in August.Peer reviewe

Measurement of the Splitting Function in &ITpp &ITand Pb-Pb Collisions at root&ITsNN&IT=5.02 TeV

Data from heavy ion collisions suggest that the evolution of a parton shower is modified by interactions with the color charges in the dense partonic medium created in these collisions, but it is not known where in the shower evolution the modifications occur. The momentum ratio of the two leading partons, resolved as subjets, provides information about the parton shower evolution. This substructure observable, known as the splitting function, reflects the process of a parton splitting into two other partons and has been measured for jets with transverse momentum between 140 and 500 GeV, in pp and PbPb collisions at a center-of-mass energy of 5.02 TeV per nucleon pair. In central PbPb collisions, the splitting function indicates a more unbalanced momentum ratio, compared to peripheral PbPb and pp collisions.. The measurements are compared to various predictions from event generators and analytical calculations.Peer reviewe

Measurement of nuclear modification factors of gamma(1S)), gamma(2S), and gamma(3S) mesons in PbPb collisions at root s(NN)=5.02 TeV

The cross sections for ϒ(1S), ϒ(2S), and ϒ(3S) production in lead-lead (PbPb) and proton-proton (pp) collisions at √sNN = 5.02 TeV have been measured using the CMS detector at the LHC. The nuclear modification factors, RAA, derived from the PbPb-to-pp ratio of yields for each state, are studied as functions of meson rapidity and transverse momentum, as well as PbPb collision centrality. The yields of all three states are found to be significantly suppressed, and compatible with a sequential ordering of the suppression, RAA(ϒ(1S)) > RAA(ϒ(2S)) > RAA(ϒ(3S)). The suppression of ϒ(1S) is larger than that seen at √sNN = 2.76 TeV, although the two are compatible within uncertainties. The upper limit on the RAA of ϒ(3S) integrated over pT, rapidity and centrality is 0.096 at 95% confidence level, which is the strongest suppression observed for a quarkonium state in heavy ion collisions to date. © 2019 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/). Funded by SCOAP3.Peer reviewe

Electroweak production of two jets in association with a Z boson in proton-proton collisions root s =13 TeV

A measurement of the electroweak (EW) production of two jets in association with a Z boson in proton-proton collisions at root s = 13 TeV is presented, based on data recorded in 2016 by the CMS experiment at the LHC corresponding to an integrated luminosity of 35.9 fb(-1). The measurement is performed in the lljj final state with l including electrons and muons, and the jets j corresponding to the quarks produced in the hard interaction. The measured cross section in a kinematic region defined by invariant masses m(ll) > 50 GeV, m(jj) > 120 GeV, and transverse momenta P-Tj > 25 GeV is sigma(EW) (lljj) = 534 +/- 20 (stat) fb (syst) fb, in agreement with leading-order standard model predictions. The final state is also used to perform a search for anomalous trilinear gauge couplings. No evidence is found and limits on anomalous trilinear gauge couplings associated with dimension-six operators are given in the framework of an effective field theory. The corresponding 95% confidence level intervals are -2.6 <cwww/Lambda(2) <2.6 TeV-2 and -8.4 <cw/Lambda(2) <10.1 TeV-2. The additional jet activity of events in a signal-enriched region is also studied, and the measurements are in agreement with predictions.Peer reviewe