Experimental evidence of transition between dynamical and kinematical diffraction regimes in ion-implanted Si observed through X-ray multiple-beam diffraction mappings

CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOFUNDAÇÃO DE AMPARO À PESQUISA E AO DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO DO MARANHÃO - FAPEMAIn this paper, the dependence of a Laue diffraction streak on the crystalline perfection of Xe-implanted Si(001) substrates is presented, based on the observation in the X-ray multiple diffraction (XRMD) mappings, as an experimental evidence of the transition between dynamical and kinematical diffraction regimes. A direct observation of the implanted region by transmission electron microscopy revealed an amorphous Si layer, which recrystallizes into a heavily twinned and faulted microstructure after thermal treatment at 800 degrees C. Besides the lattice damages, the annealing induces the formation of Xe bubbles. Both singularly affect the XRMD pattern, primarily the fourfold streaks profile of the (000)(002)(1 (1) over bar(1) over bar)(1 (1) over bar3) four-beam simultaneous case when compared with the pristine Si pattern, highlighting the intra-and inter-block diffractions and the role played by the primary extinction effect. Such features provide information on the dominant diffraction regime. The findings are also discussed and compared to the conventional reciprocal space mappings via the asymmetric Si(113) reflection. Published by AIP Publishing.In this paper, the dependence of a Laue diffraction streak on the crystalline perfection of Xe-implanted Si(001) substrates is presented, based on the observation in the X-ray multiple diffraction (XRMD) mappings, as an experimental evidence of the transition between dynamical and kinematical diffraction regimes. A direct observation of the implanted region by transmission electron microscopy revealed an amorphous Si layer, which recrystallizes into a heavily twinned and faulted microstructure after thermal treatment at 800 degrees C. Besides the lattice damages, the annealing induces the formation of Xe bubbles. Both singularly affect the XRMD pattern, primarily the fourfold streaks profile of the (000)(002)(1 (1) over bar(1) over bar)(1 (1) over bar3) four-beam simultaneous case when compared with the pristine Si pattern, highlighting the intra-and inter-block diffractions and the role played by the primary extinction effect. Such features provide information on the dominant diffraction regime. The findings are also discussed and compared to the conventional reciprocal space mappings via the asymmetric Si(113) reflection.1091415CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOFUNDAÇÃO DE AMPARO À PESQUISA E AO DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO DO MARANHÃO - FAPEMACNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOFUNDAÇÃO DE AMPARO À PESQUISA E AO DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO DO MARANHÃO - FAPEMASem informaçãoSem informaçãoSem informaçãoThe authors would like to thank the financial support of the Brazilian agencies CNPq, FAPESP, FAPEMA, the LNLS (XRD2 beamline) staff and Sérgio Morelhão for useful discussions

Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi2 nanoparticles

Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2 nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using omega:phi mappings of the (111) and (111) Bragg-surface diffraction peaks. the nanoparticles, synthesized by ion-beam-induced epitaxial crystallization of Fe+-implanted Si(001), were observed to have different orientations and morphologies (sphere-and plate-like nanoparticles) within the implanted/recrystallized region. the results show that the shape of the synthesized material singularly affects the surrounding Si lattice. the lattice strain distribution elucidated by the nonconventional X-ray Bragg-surface diffraction technique clearly exhibits an anisotropic effect, predominantly caused by plate-shaped nanoparticles. This type of refined detection reflects a key application of the method, which could be used to allow discrimination of strains in distorted semiconductor substrate layers.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)FAPEMACoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)UNIFESP, Inst Ciencia & Tecnol ICT, BR-12231280 Sao Jose Dos Campos, SP, BrazilUniv Fed Maranhao, Dept Fis CCET, BR-65085580 Sao Luis, MA, BrazilUniv Fed Maranhao, CCSST, BR-65900410 Imperatriz, MA, BrazilUniv Fed Rio Grande do Sul, Inst Fis, Programa Posgrad Ciencias Mat PGCIMAT, BR-91501970 Porto Alegre, RS, BrazilCEA, Leti Minatec Campus, F-38054 Grenoble, FranceUniv Estadual Campinas, Inst Fis Gleb Wataghin IFGW, BR-13083859 Campinas, SP, BrazilUNIFESP, Inst Ciencia & Tecnol ICT, BR-12231280 Sao Jose Dos Campos, SP, BrazilCAPES: 2358-09-3Web of Scienc

Effect of Basic Promoters on Porous Supported Alumina Catalysts for Acetins Production

A facile strategy for the design of porous supports was obtained by modifying the sol-gel method followed by the wet impregnation technique. In this respect, herein, the acidity of the γ-Al2O3 phase was modulated by adding basic MgO, La2O3 or ZnO promoters to form binary supported catalysts. The Ni and Co dispersion on the supports associated with their tunable acidity and morphologies resulted in highly porous supported alumina-based catalysts. The physicochemical properties of the solids were comprehensively investigated by XRD, textural properties, Raman and FTIR spectroscopy, SEM-EDS, TEM, EPR and XPS analyses. The catalytic performances in the esterification of glycerol in the presence of acetic acid (EG) for the acetins production were evaluated. The highly dispersed NiO and Co3O4 active species on binary porous supports produced synergistic effects appearing to be the reason for the activity of the solids in the EG reaction. Under the optimized reaction conditions, NiCo/MgO-Al2O3 was found to be a robust solid with superior catalytic performance and improved stability in four reaction cycles with 65.0% of glycerol conversion with an exclusive selectivity of 53% for triacetin. The presence of Co2+/Co3+ and Ni2+ strongly interacting with the spinel γ-Al2O3 and MgAl2O4 phases, the latter having a large number of lattice oxygen species, was considered another active component besides those of Ni and Co in the esterification of glycerol.This work is supported by Funcap (Grant n° PS1-0186-00346.01.00/21). Financial assistance received from Ministerio de Ciencia e Innovación, Junta de Andalucía and FEDER is also thankfully acknowledged for funding project n° PID2021-126235OB-C32, UMA18-FEDERJA-126 and P20_00375. Partial funding for open access charge: Universidad de Málag

Bodily crises in skilled performance: Considering the need for artistic habits

Empirical evidence demonstrates that performing artists are confronted by a variety of ‘bodily crises’ (e.g., injury, attrition of habits induced by ageing) over the course of their careers (Wainwright, Williams, & Turner, 2005). Such crises may present a serious threat to the embodied subject. Unfortunately, many prominent theories of skill acquisition (e.g., Fitts & Posner, 1967) appear to evacuate the body from performance by suggesting that any form of conscious processing (i.e., paying conscious attention to one's action during motor skill execution) will disrupt habitual behaviour. As a result, few researchers have considered how performers might tackle bodily anomalies. In the current paper, we seek to address this issue by discussing a variety of the ‘crises’ that confront the performing body. We start by discussing a number of disciplinary practices that may contribute to these crises. Next, we argue that habitual movements must be open to ‘acts of creativity’ in order to maintain a productive relationship between the performing body and the environment. Then we consider what this ‘creative action’ might involve and discuss a number of approaches (e.g., mindfulness, somaesthetic awareness) that could maintain and improve one's movement proficiency. Here, our argument draws on Dewey's (1922) pragmatist philosophy and his belief that ‘intelligent habit’ was required to help people to improve their movement functioning. Finally, we consider the implications of our argument for current conceptualisations of ‘habitual’ movement and recommend that researchers explore the adaptive and flexible capacity of the performing body

Nanoestruturas luminescentes ß-FeSi 2 produzidas pela técnica de implantação e irradiação iônica : caracterização estrutural e óptica

Neste trabalho, apresentamos um estudo sistemático das propriedades estruturais e ópticas de nanopartículas FeSi2, sintetizadas em matriz SiO2/Si por implantação iônica, seguida de cristalização epitaxial induzida por feixe de íons (IBIEC) e tratamentos térmicos em atmosfera 95 % N2 - 5 % H2. A cada etapa do processo de síntese, a formação e crescimento de nanopartículas FeSi2, bem como a produção de defeitos, foi caracterizada estruturalmente e correlacionada com as propriedades de emissão de luz. Para fins de interpretação dos resultados, um conjunto de amostras contendo Ni foi sintetizado nas mesmas condições experimentais que as amostras de Fe e suas propriedades estruturais e ópticas também foram estudadas. Através do processo de recristalização IBIEC obtivemos importantes informações sobre as propriedades vibracionais da fase metálica γ-FeSi2 e sua metaestabilidade quando formada a baixa concentração de Fe. Em particular, a transição desta fase via temperatura de recozimento para a fase semicondutora β-FeSi2 foi investigada detalhadamente. A natureza do gap fundamental de energia do composto semicondutor também foi avaliada. Em experimentos em função da temperatura de tratamento térmico, observou-se que concomitantemente à formação e crescimento de nanopartículas semicondutoras, existe uma complexa evolução de defeitos opticamente ativos. De acordo com a temperatura de recozimento, bandas de fotoluminescência (PL) na região espectral do infravermelho próximo (0.7 eV - 0.9 eV) com diferentes intensidades e morfologias foram detectadas a 2 K. Baseado nos resultados das caracterizações estruturais e ópticas do sistema SiO2/Si + nanopartículas FeSi2, juntamente com resultados PL experimentais comparativos da formação do composto metálico NiSi2, as origens físicas das distintas luminescências observadas foram discriminadas em termos de emissões intrínsecas do semicondutor β-FeSi2 e de específicos tipos de defeitos na matriz de Silício que atuam como centros de recombinação radiativa.In this work, we present a systematic study of the structural and optical properties of FeSi2 nanoparticles, synthesized in SiO2/Si matrix by ion implantation, followed by ion beam induced epitaxial crystallization (IBIEC) and several thermal treatments under 95 % N2 - 5 % H2 atmosphere. Each step of the syntheses process, the formation and growth of the FeSi2 nanoparticles, as well as the damage production, were structurally characterized and correlated with their light emission properties. For purposes of interpreting the results, a set of samples containing Ni was synthesized in the same experimental conditions that the Fe samples and their structural and optical properties were also studied. Through IBIEC recrystallization process, important informations were obtained about vibrational properties of the metallic γ-FeSi2 phase and its metastability when formed at low Fe concentration. In particular, the phase transition from γ-FeSi2 to semiconducting β-FeSi2 via annealing treatment was investigated in detail. Furthermore, the nature of the energy fundamental gap of the semiconductor compound was also evaluated. Thermal treatment experiments at different temperatures showed that concomitantly to the formation and growth of the semiconducting nanoparticles, there is a complex evolution of the optically active defects. According to the annealing temperature, photoluminescence (PL) bands in the near-infrared spectral region (0.7 eV - 0.9 eV) with different intensities and morphologies were detected at 2 K. Based on the structural and optical characterization results of the SiO2/Si + FeSi2 nanoparticles, combined with the comparative experimental PL results of the metallic NiSi2 compound formation, the physical origin of the distinct observed luminescence were discriminated in terms of intrinsic emissions of the semiconducting β-FeSi2 and specific types of defects in the Si matrix, that acts as radiative recombination centers

Nanoestruturas luminescentes ß-FeSi 2 produzidas pela técnica de implantação e irradiação iônica : caracterização estrutural e óptica

Neste trabalho, apresentamos um estudo sistemático das propriedades estruturais e ópticas de nanopartículas FeSi2, sintetizadas em matriz SiO2/Si por implantação iônica, seguida de cristalização epitaxial induzida por feixe de íons (IBIEC) e tratamentos térmicos em atmosfera 95 % N2 - 5 % H2. A cada etapa do processo de síntese, a formação e crescimento de nanopartículas FeSi2, bem como a produção de defeitos, foi caracterizada estruturalmente e correlacionada com as propriedades de emissão de luz. Para fins de interpretação dos resultados, um conjunto de amostras contendo Ni foi sintetizado nas mesmas condições experimentais que as amostras de Fe e suas propriedades estruturais e ópticas também foram estudadas. Através do processo de recristalização IBIEC obtivemos importantes informações sobre as propriedades vibracionais da fase metálica γ-FeSi2 e sua metaestabilidade quando formada a baixa concentração de Fe. Em particular, a transição desta fase via temperatura de recozimento para a fase semicondutora β-FeSi2 foi investigada detalhadamente. A natureza do gap fundamental de energia do composto semicondutor também foi avaliada. Em experimentos em função da temperatura de tratamento térmico, observou-se que concomitantemente à formação e crescimento de nanopartículas semicondutoras, existe uma complexa evolução de defeitos opticamente ativos. De acordo com a temperatura de recozimento, bandas de fotoluminescência (PL) na região espectral do infravermelho próximo (0.7 eV - 0.9 eV) com diferentes intensidades e morfologias foram detectadas a 2 K. Baseado nos resultados das caracterizações estruturais e ópticas do sistema SiO2/Si + nanopartículas FeSi2, juntamente com resultados PL experimentais comparativos da formação do composto metálico NiSi2, as origens físicas das distintas luminescências observadas foram discriminadas em termos de emissões intrínsecas do semicondutor β-FeSi2 e de específicos tipos de defeitos na matriz de Silício que atuam como centros de recombinação radiativa.In this work, we present a systematic study of the structural and optical properties of FeSi2 nanoparticles, synthesized in SiO2/Si matrix by ion implantation, followed by ion beam induced epitaxial crystallization (IBIEC) and several thermal treatments under 95 % N2 - 5 % H2 atmosphere. Each step of the syntheses process, the formation and growth of the FeSi2 nanoparticles, as well as the damage production, were structurally characterized and correlated with their light emission properties. For purposes of interpreting the results, a set of samples containing Ni was synthesized in the same experimental conditions that the Fe samples and their structural and optical properties were also studied. Through IBIEC recrystallization process, important informations were obtained about vibrational properties of the metallic γ-FeSi2 phase and its metastability when formed at low Fe concentration. In particular, the phase transition from γ-FeSi2 to semiconducting β-FeSi2 via annealing treatment was investigated in detail. Furthermore, the nature of the energy fundamental gap of the semiconductor compound was also evaluated. Thermal treatment experiments at different temperatures showed that concomitantly to the formation and growth of the semiconducting nanoparticles, there is a complex evolution of the optically active defects. According to the annealing temperature, photoluminescence (PL) bands in the near-infrared spectral region (0.7 eV - 0.9 eV) with different intensities and morphologies were detected at 2 K. Based on the structural and optical characterization results of the SiO2/Si + FeSi2 nanoparticles, combined with the comparative experimental PL results of the metallic NiSi2 compound formation, the physical origin of the distinct observed luminescence were discriminated in terms of intrinsic emissions of the semiconducting β-FeSi2 and specific types of defects in the Si matrix, that acts as radiative recombination centers