Influence of Carbon Nanotubes Dispersion on Thermal Properties of Copper-Carbon Nanotubes (CNTs) Composite Materials

In this present work, two methods for dispersing carbon nanotubes into the copper matrix were tested: a Solid Route process where CNTs are simply mixed with the copper powder and a Liquid Route process where CNTs are dispersed in a copper salt solution and then mixed with the metallic copper powder. Powders are sintered by uni-axial hot pressing process under vacuum atmosphere at 650°C and thermal conductivities of composite materials were measured using the laser flash method. Results are compared with a theoretical model of Nan et al. which enables to predict the thermal conductivity of materials containing CNTs. Comparison of experimental and theoretical results tends to prove that CNTs are 2D-randomly dispersed in a plane perpendicular to the pressing direction during uni-axial hot pressing process. Moreover, an increase of +7% of the thermal conductivity is shown for the composite material containing 1 vol. % of CNTs into the copper matrix

Fabrication of a hydrogenated amorphous silicon detector in 3-d geometry and preliminary test on planar prototypes

Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety of substrates. Devices employing a-Si:H technologies have been used to detect many different kinds of radiation, namely, minimum ionizing particles (MIPs), X-rays, neutrons, and ions, as well as low-energy protons and alphas. However, the detection of MIPs using planar a-Si:H diodes has proven difficult due to their unsatisfactory S/N ratio arising from a combination of high leakage current, high capacitance, and limited charge collection efficiency (50% at best for a 30 µm planar diode). To overcome these limitations, the 3D-SiAm collaboration proposes employing a 3D detector geometry. The use of vertical electrodes allows for a small collection distance to be maintained while preserving a large detector thickness for charge generation. The depletion voltage in this configuration can be kept below 400 V with a consequent reduction in the leakage current. In this paper, following a detailed description of the fabrication process, the results of the tests performed on the planar p-i-n structures made with ion implantation of the dopants and with carrier selective contacts are illustrated