Novel Memory Structures in QCA Nano Technology

Quantum-dot Cellular Automata (QCA) is a new emerging technology for designing electronic circuits in nanoscale. QCA technology comes to overcome the CMOS limitation and to be a good alternative as it can work in ultra-high-speed. QCA brought researchers attention due to many features such as low power consumption, small feature size in addition to high frequency. Designing circuits in QCA technology with minimum costs such as cells count and the area is very important. This paper presents novel structures of D-latch and D-Flip Flop with the lower area and cell count. The proposed Flip-Flop has SET and RESET ability. The proposed latch and Flip-Flop have lower complexity compared with counterparts in terms of cell counts by 32% and 26% respectively. The proposed circuits are designed and simulated in QCADesigner software

Analysis of IP Based Implementation of Adders and Multipliers in Submicron and Deep Submicron Technologies

Datapath is at the heart of the microprocessor whose performance is a key factor which determines the performance of the processor. Adders and multipliers are the key elements in the datapath which usually are a measure of the performance of the datapath. So, with scaling of MOS transistors down into the deep submicron regime, it is necessary to investigate the performance of these key elements at such small device sizes. This thesis focuses on investigating the performance of existing architectures of adders and multipliers in the submicron and deep submicron technologies at the physical implementation level. Also, an effort has been made to investigate the performance of pipelined implementations of these architectures. Verilog HDL instantiations of adders and multipliers that are available with the DesignWare Building Block IP of Synopsys have been utilized in this thesis. The entire process of the design right from synthesis of the design down to power analysis of the design has been carried out using various EDA tools and has been automated using scripts written in TCL.School of Electrical & Computer Engineerin

Nanoscale resistive switching memory devices: a review

In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I–V behaviour and the underlying physical switching mechanisms. By means of the most important representative devices, the current state of electrical performance characteristics is illuminated in-depth. Moreover, the ability of resistive switching devices to be integrated into state-of-the-art CMOS circuits under the additional consideration with a suitable selector device for memory array operation is assessed. From this analysis, and by factoring in the maturity of the different concepts, a ranking methodology for application of the nanoscale resistive switching memory devices in the memory landscape is derived. Finally, the suitability of the different device concepts for beyond pure memory applications, such as brain inspired and neuromorphic computational or logic in memory applications that strive to overcome the vanNeumann bottleneck, is discussed

Circuit Optimisation using Device Layout Motifs

Circuit designers face great challenges as CMOS devices continue to scale to nano dimensions, in particular, stochastic variability caused by the physical properties of transistors. Stochastic variability is an undesired and uncertain component caused by fundamental phenomena associated with device structure evolution, which cannot be avoided during the manufacturing process. In order to examine the problem of variability at atomic levels, the 'Motif' concept, defined as a set of repeating patterns of fundamental geometrical forms used as design units, is proposed to capture the presence of statistical variability and improve the device/circuit layout regularity. A set of 3D motifs with stochastic variability are investigated and performed by technology computer aided design simulations. The statistical motifs compact model is used to bridge between device technology and circuit design. The statistical variability information is transferred into motifs' compact model in order to facilitate variation-aware circuit designs. The uniform motif compact model extraction is performed by a novel two-step evolutionary algorithm. The proposed extraction method overcomes the drawbacks of conventional extraction methods of poor convergence without good initial conditions and the difficulty of simulating multi-objective optimisations. After uniform motif compact models are obtained, the statistical variability information is injected into these compact models to generate the final motif statistical variability model. The thesis also considers the influence of different choices of motif for each device on circuit performance and its statistical variability characteristics. A set of basic logic gates is constructed using different motif choices. Results show that circuit performance and variability mitigation can benefit from specific motif permutations. A multi-stage optimisation methodology is introduced, in which the processes of optimisation are divided into several stages. Benchmark circuits show the efficacy of the proposed methods. The results presented in this thesis indicate that the proposed methods are able to provide circuit performance improvements and are able to create circuits that are more robust against variability

New Logic Synthesis As Nanotechnology Enabler (invited paper)

Nanoelectronics comprises a variety of devices whose electrical properties are more complex as compared to CMOS, thus enabling new computational paradigms. The potentially large space for innovation has to be explored in the search for technologies that can support large-scale and high- performance circuit design. Within this space, we analyze a set of emerging technologies characterized by a similar computational abstraction at the design level, i.e., a binary comparator or a majority voter. We demonstrate that new logic synthesis techniques, natively supporting this abstraction, are the technology enablers. We describe models and data-structures for logic design using emerging technologies and we show results of applying new synthesis algorithms and tools. We conclude that new logic synthesis methods are required to both evaluate emerging technologies and to achieve the best results in terms of area, power and performance

New Data Structures and Algorithms for Logic Synthesis and Verification

The strong interaction between Electronic Design Automation (EDA) tools and Complementary Metal-Oxide Semiconductor (CMOS) technology contributed substantially to the advancement of modern digital electronics. The continuous downscaling of CMOS Field Effect Transistor (FET) dimensions enabled the semiconductor industry to fabricate digital systems with higher circuit density at reduced costs. To keep pace with technology, EDA tools are challenged to handle both digital designs with growing functionality and device models of increasing complexity. Nevertheless, whereas the downscaling of CMOS technology is requiring more complex physical design models, the logic abstraction of a transistor as a switch has not changed even with the introduction of 3D FinFET technology. As a consequence, modern EDA tools are fine tuned for CMOS technology and the underlying design methodologies are based on CMOS logic primitives, i.e., negative unate logic functions. While it is clear that CMOS logic primitives will be the ultimate building blocks for digital systems in the next ten years, no evidence is provided that CMOS logic primitives are also the optimal basis for EDA software. In EDA, the efficiency of methods and tools is measured by different metrics such as (i) the result quality, for example the performance of a digital circuit, (ii) the runtime and (iii) the memory footprint on the host computer. With the aim to optimize these metrics, the accordance to a specific logic model is no longer important. Indeed, the key to the success of an EDA technique is the expressive power of the logic primitives handling and solving the problem, which determines the capability to reach better metrics. In this thesis, we investigate new logic primitives for electronic design automation tools. We improve the efficiency of logic representation, manipulation and optimization tasks by taking advantage of majority and biconditional logic primitives. We develop synthesis tools exploiting the majority and biconditional expressiveness. Our tools show strong results as compared to state-of-the-art academic and commercial synthesis tools. Indeed, we produce the best results for several public benchmarks. On top of the enhanced synthesis power, our methods are the natural and native logic abstraction for circuit design in emerging nanotechnologies, where majority and biconditional logic are the primitive gates for physical implementation. We accelerate formal methods by (i) studying properties of logic circuits and (ii) developing new frameworks for logic reasoning engines. We prove non-trivial dualities for the property checking problem in logic circuits. Our findings enable sensible speed-ups in solving circuit satisfiability. We develop an alternative Boolean satisfiability framework based on majority functions. We prove that the general problem is still intractable but we show practical restrictions that can be solved efficiently. Finally, we focus on reversible logic where we propose a new equivalence checking approach. We exploit the invertibility of computation and the functionality of reversible gates in the formulation of the problem. This enables one order of magnitude speed up, as compared to the state-of-the-art solution. We argue that new approaches to solve EDA problems are necessary, as we have reached a point of technology where keeping pace with design goals is tougher than ever

AI/ML Algorithms and Applications in VLSI Design and Technology

An evident challenge ahead for the integrated circuit (IC) industry in the nanometer regime is the investigation and development of methods that can reduce the design complexity ensuing from growing process variations and curtail the turnaround time of chip manufacturing. Conventional methodologies employed for such tasks are largely manual; thus, time-consuming and resource-intensive. In contrast, the unique learning strategies of artificial intelligence (AI) provide numerous exciting automated approaches for handling complex and data-intensive tasks in very-large-scale integration (VLSI) design and testing. Employing AI and machine learning (ML) algorithms in VLSI design and manufacturing reduces the time and effort for understanding and processing the data within and across different abstraction levels via automated learning algorithms. It, in turn, improves the IC yield and reduces the manufacturing turnaround time. This paper thoroughly reviews the AI/ML automated approaches introduced in the past towards VLSI design and manufacturing. Moreover, we discuss the scope of AI/ML applications in the future at various abstraction levels to revolutionize the field of VLSI design, aiming for high-speed, highly intelligent, and efficient implementations

Towards Oxide Electronics:a Roadmap

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. With all these innovations and efforts, the transistor size is approaching the natural limitations of materials in the near future. The circuits are expected to compute in a more efficient way. From this perspective, new device concepts are desirable to exploit additional functionality. On the other hand, with the continuously increased device density on the chips, reducing the power consumption has become a key concern in IC design. To overcome the limitations of Complementary Metal-Oxide-Semiconductor (CMOS) technology in computing efficiency and power reduction, this thesis introduces the multiple- independent-gate Field-Effect Transistors (FETs) with silicon nanowires and FinFET structures. The device not only has the capability of polarity control, but also provides dual-threshold- voltage and steep-subthreshold-slope operations for power reduction in circuit design. By independently modulating the Schottky junctions between metallic source/drain and semiconductor channel, the dual-threshold-voltage characteristics with controllable polarity are achieved in a single device. This property is demonstrated in both experiments and simulations. Thanks to the compact implementation of logic functions, circuit-level benchmarking shows promising performance with a configurable dual-threshold-voltage physical design, which is suitable for low-power applications. This thesis also experimentally demonstrates the steep-subthreshold-slope operation in the multiple-independent-gate FETs. Based on a positive feedback induced by weak impact ionization, the measured characteristics of the device achieve a steep subthreshold slope of 6 mV/dec over 5 decades of current. High Ion/Ioff ratio and low leakage current are also simultaneously obtained with a good reliability. Based on a physical analysis of the device operation, feasible improvements are suggested to further enhance the performance. A physics-based surface potential and drain current model is also derived for the polarity-controllable Silicon Nanowire FETs (SiNWFETs). By solving the carrier transport at Schottky junctions and in the channel, the core model captures the operation with independent gate control. It can serve as the core framework for developing a complete compact model by integrating advanced physical effects. To summarize, multiple-independent-gate SiNWFETs and FinFETs are extensively studied in terms of fabrication, modeling, and simulation. The proposed device concept expands the family of polarity-controllable FETs. In addition to the enhanced logic functionality, the polarity-controllable SiNWFETs and FinFETs with the dual-threshold-voltage and steep-subthreshold-slope operation can be promising candidates for future IC design towards low-power applications

Miniaturized Transistors, Volume II

In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before