Matériaux et Dispositifs optoélectroniques pour la génération et la détection de signaux THz impulsionnels par photocommutation à 1,55 m

Le sujet de la thèse a porté sur la mise au point, la caractérisation et l'utilisation de matériaux semi-conducteurs, au sein desquels les porteurs libres ont un temps de vie extrêmement brefs (picoseconde ou sub-picoseconde), pour réaliser des antennes photoconductrices émettrices ou détectrices de rayonnement électromagnétique térahertz (THz). Contrairement au semi-conducteur LTG-GaAs (low temperature grown GaAs) à la technologie bien dominée et aux performances exceptionnelles lorsque photo-excité par des impulsions lasers de longueurs d'onde typiquement inférieures à 0,8 m, le travail portait ici sur des matériaux permettant l'emploi de lasers dont les longueurs d'onde sont celles des télécommunications optiques, à savoir aux alentours de 1,5 m. L'intérêt est de bénéficier de la technologie mature de ces lasers, et du coût relativement modique des composants pour les télécommunications optiques. Pour réaliser des antennes THz performantes et efficaces, le matériau semi-conducteur doit présenter plusieurs qualités : vie des porteurs libres très courte, grande mobilité des porteurs, haute résistivité hors éclairement, et bonne structure cristallographique pour éviter les claquages électriques. Pour obtenir une courte durée de vie, on introduit un grand nombre de pièges dans le semi-conducteur, qui capturent efficacement les électrons libres. Pour les matériaux de type InGaAs employés à 1,5 m, le problème est que le niveau en énergie de ces pièges, par exemple pour les matériaux épitaxiés à basse température, est très proche de la bande de conduction du semi-conducteur. Cela est équivalent à un dopage n du matériau, ce qui en diminue fortement sa résistivité hors éclairement. Plusieurs solutions ont été apportées par différents laboratoires : compensation par dopage p pour les matériaux épitaxiés à basse température, bombardement ionique, implantation ionique, ou même structures à couches alternées où la photo-génération et la recombinaison des porteurs libres se produisent à des endroits différents. Le but du travail de thèse était de fabriquer des matériaux préparés suivant ces différentes techniques, de les caractériser et de comparer leurs performances pour l'optoélectronique THz. Les semi-conducteurs à étudier étaient de type InGaAs comme déjà publiés par la concurrence, l'originalité de thèse portant sur la comparaison de ces différents matériaux et si possible leur optimisation,. Au cours de ce travail de thèse, de nombreuses couches d'InGaAs ont été épitaxiées, en faisant varier les paramètres de dépôt, et des antennes THz ont été fabriquées. Les couches ont été caractérisées du point de vue cristallographique, ainsi que pour la conductivité électrique DC (mesures 4 pointes, mobilité Hall ), les propriétés d'absorption optique (spectroscopie visible et IR), la durée de vie des porteurs par mesure optique pompe-sonde. Pour les couches épitaxiées à basse température, l'influence d'un recuit thermique ainsi que du dopage en béryllium ont été étudiés. Dans le cas de couches bombardées ou implantées, plusieurs ions ont été utilisés, le brome, le fer et l'hydrogène. Les relations entre la cartographie des défauts structuraux et/ou des ions implantés et les propriétés électriques et de dynamique des porteurs ont été examinées en détail. Ces études permettent de comprendre le type de défauts qui piègent les porteurs dans ces matériaux, ainsi que leur formation lors du processus de fabrication et de traitement des couches. Finalement les meilleures couches fabriquées présentent des performances comparables à celles publiées par ailleurs. Les derniers travaux de thèse ont permis d'obtenir les premiers signaux de rayonnement THz générés par une antenne fabriquée avec l'InGaAs optimisé.The subject of the thesis focused on the development, characterization and use of semiconductor materials, in which the free carriers have a very short lifetime (picosecond or sub-picosecond) to produce photoconductive antennas emitting and detecting electromagnetic terahertz (THz) radiation. Unlike semiconductor LTG-GaAs (low temperature grown GaAs) which is a well-dominated technology and present exceptional performances when photoexcited by typically less than 0.8 micron wavelength laser pulses, the work focused on here materials for the use of lasers whose wavelengths are those of the optical communication, namely around 1.5 microns. The interest is to benefit from the mature technology of these lasers, and relatively low cost components for optical telecommunications. To achieve effective and efficient THz antennas, the semiconductor material must have several qualities : lifetime of free carriers very short, high carrier mobility, high resistivity outside lighting, and good crystallographic structure to prevent electrical breakdown. For a short lifetime, a large number of traps are introduced into the semiconductor, which effectively capture the free electrons. For InGaAs materials used at 1.5 microns, the problem is that the energy level of the traps, for example, the epitaxial material at low temperature is very close to the conduction band of the semiconductor. This is equivalent to an n-doped material, what greatly reduces its resistivity outside illumination. Several solutions have been made by different laboratories : compensation for the p-doped epitaxial materials at low temperature, ion bombardment, ion implantation, or even alternating layer structures where photo-generation and recombination of free carriers occur in different places. The aim of the thesis was to produce materials prepared using these techniques to characterize and compare their performance to THz optoelectronics. The studied InGaAs-based semiconductors were as previously published by the competition, the originality of the thesis was on the comparison of these different materials and if possible their optimization. During this work, many of InGaAs layers were grown epitaxially by varying the deposition parameters, and THz antennas were fabricated. The layers were characterized from the crystallographic point of view, as well as the DC electrical conductivity (measures 4 points, Hall mobility ... ), the optical absorption properties (visible and IR spectroscopy ), the lifetime of carriers by optical pump-probe measurement. For low temperature epitaxial layers, the influences of thermal and doping beryllium annealing were studied. In the case of shelled or implanted layers, several ions were used, bromine, iron and hydrogen. The relationship between the mapping of structural defects of the implanted ions and electrical and carrier dynamics properties were discussed in detail. These studies allow us to understand the type of defects that trap carriers in these materials, as well as training in the process of manufacturing and processing layers. Finally the best layers are made comparable to those published elsewhere performance. The last study allowed to achieve the first signals of THz radiation generated by InGaAs-based optimized antenna.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates

International audienceWe have investigated the effect of misorientated InP001 substrates on the optical properties of InAs quantum islands QIs grown by molecular-beam epitaxy in the Stranski-Krastanow regime. Detailed temperature-dependent photoluminescence PL, excitation density PL, and polarization of photoluminescence PPL are studied. PPL shows a high degree of linear polarization near 40% for the nominally oriented substrate n and for the substrate with 2° off miscut angle toward the 110 direction (2° F), while it is near 15% for the substrate with 2° off miscut angle towards 010 direction (2° B), indicating the growth of InAs quantum wires on nominal and 2° F substrates and of InAs quantum dots on 2° B substrate. These island shapes are confirmed by morphological investigations performed by atomic force microscopy. The integrated PL intensity remains very strong at room temperature, as much as 36% of that at 8 K, indicating a strong spatial localization of the carriers in the InAs QIs grown on InP001

Reversible Al Propagation in Si x Ge 1-x Nanowires

While reversibility is a fundamental concept in thermodynamics, most reactions are not readily reversible, especially in solid state physics. For example, thermal diffusion is a widely known concept, used among others to inject dopant atoms into the substitutional positions in the matrix and improve the device properties. Typically, such a diffusion process will create a concentration gradient extending over increasingly large regions, without possibility to reverse this effect. On the other hand, while the bottom up growth of semiconducting nanowires is interesting, it can still be difficult to fabricate axial heterostructures with high control. In this paper, we report a reversible thermal diffusion process occurring in the solid-state exchange reaction between an Al metal pad and a SixGe1-x alloy nanowire observed by in-situ transmission electron microscopy. The thermally assisted reaction results in the creation of a Si-rich region sandwiched between the reacted Al and unreacted SixGe1-x part, forming an axial Al/Si/SixGe1-x heterostructure. Upon heating or (slow) cooling, the Al metal can repeatably move in and out of the SixGe1-x alloy nanowire while maintaining the rod-like geometry and crystallinity, allowing to fabricate and contact nanowire heterostructures in a reversible way in a single process step, compatible with current Si based technology. This interesting system is promising for various applications, such as phase change memories in an all crystalline system with integrated contacts, as well as Si/SixGe1-x/Si heterostructures for near-infrared sensing applications

Prevalence of Lipid Abnormalities and Cholesterol Target Value Attainment in Patients with Stable and Acute Coronary Heart Disease in the United Arab Emirates

Background: Careful management of lipid abnormalities in patients with coronary heart disease (CHD) or an acute coronary syndrome (ACS) can reduce the risk of recurrent cardiovascular events. The extent of hyperlipidemia in these very high-risk patients in the United Arab Emirates (UAE), along with the treatment strategies employed, is not clear. Methods: The Dyslipidemia International Study II was a multinational observational analysis carried out from 2012 to 2014. Patients were enrolled if they had either stable CHD or an ACS. Patient characteristics, lipid levels, and use of lipid-lowering therapy (LLT) were recorded at enrollment. For the ACS patients, the LLT used during the 4 months\u27 follow-up period was documented, as were any cardiovascular events. Results: A total of 416 patients were recruited from two centers in the UAE, 216 with stable CHD and 200 hospitalized with an ACS. Comorbidities and cardiovascular risk factors were extremely common. A low-density lipoprotein cholesterol level of \u3c70 mg/dl, recommended for patients at very high cardiovascular risk, was attained by 39.3% of the LLT-treated CHD patients and 33.3% of the LLT-treated ACS patients at enrollment. The mean atorvastatin-equivalent daily statin dose was 29 ± 15 mg for the CHD patients, with 13.7% additionally using ezetimibe. For the ACS patients, the daily dosage was 23 ± 13 mg at admission, rising to 39 ± 12 mg by the end of the 4-month follow-up. The use of nonstatin agents was extremely low in this group. Conclusions: Despite LLT being widely used, hyperlipidemia was found to be prevalent in ACS and CHD patients in the UAE. Treatment strategies need to be significantly improved to reduce the rate of cardiovascular events in these very high-risk patients

Estimation of the economic impact of a bluetongue serotype 4 outbreak in Tunisia

IntroductionSince 1999, Tunisia has experienced multiple occurrences of Bluetongue (BT) outbreaks, leading to numerous reported cases of infection and mortality in flocks. The re-emergence of the disease in 2020 caused substantial economic losses in cattle, attributed to the incursion of serotype BTV-4.MethodsTo evaluate the economic impact of the recent BT episode, we conducted a retrospective study on outbreaks that occurred in Tunisia between August and November 2020, focusing on the impact at the owner’s level and its effects on both small ruminants and cattle. A total of 234 ruminant farms (sheep, cattle, and mixed) were randomly selected across Tunisian governorates and included in the study to estimate both the direct and indirect costs of these outbreaks.ResultsTotal costs were calculated as the sum of losses and expenditures resulting from the BT outbreaks. At the animal level, total losses were estimated to range between 116.280 and 207.086 TND for one infected ewe (€33.721 and 60.055). For one lactating cow, costs varied between 2,590.724 and 3,171.107 TND (€751.310 and 919.621). In cattle, exposure to BTV led to a daily unit milk yield decrease of 12.50 to 14.66 L over an average period of 5 months. Diseased sheep experienced weight loss ranging between 4 and 10 kg during the BT outbreaks. The total mean cost of the 2020 BT outbreak in Tunisian investigated farms was estimated at 1,935 million TND (million €561.15) (range: 1,489 and 2,474 million TND; 431.81 and million €717.46). The most influential costs of the total BT outbreaks were the decrease in milk yield, mortality, and veterinary treatment.DiscussionThis study gives valuable insights on the economic impact of the incursion of a new serotype of BT in a naive population in Tunisia. Considering the substantial costs incurred, it is imperative that this disease receives increased attention from stakeholders, including animal owners, veterinary services, practitioners, and decision-makers

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these techniques. Nevertheless, Au could deteriorate the electric properties of SC and the use of other metal catalysts will be mandatory if NW are to be designed for innovating electronic. First, this article's focus will be on SiGe NW's growth using Au catalyst. The authors managed to grow SiGe NW between 350 and 400°C. Ge concentration (x) in Si1-xGex NW has been successfully varied by modifying the gas flow ratio: R = GeH4/(SiH4 + GeH4). Characterization (by Raman spectroscopy and XRD) revealed concentrations varying from 0.2 to 0.46 on NW grown at 375°C, with R varying from 0.05 to 0.15. Second, the results of Si NW growths by CVD using alternatives catalysts such as platinum-, palladium- and nickel-silicides are presented. This study, carried out on a LPCVD furnace, aimed at defining Si NW growth conditions when using such catalysts. Since the growth temperatures investigated are lower than the eutectic temperatures of these Si-metal alloys, VSS growth is expected and observed. Different temperatures and HCl flow rates have been tested with the aim of minimizing 2D growth which induces an important tapering of the NW. Finally, mechanical characterization of single NW has been carried out using an AFM method developed at the LTM. It consists in measuring the deflection of an AFM tip while performing approach-retract curves at various positions along the length of a cantilevered NW. This approach allows the measurement of as-grown single NW's Young modulus and spring constant, and alleviates uncertainties inherent in single point measurement

Diabesity in the Arabian Gulf: Challenges and Opportunities

Diabesity (diabetes associated with obesity) is a major global and local public health concern, which has almost reached an epidemic order of magnitude in the countries of the Arabian Gulf and worldwide. We sought to review the lifestyle trends in this region and to highlight the challenges and opportunities that health care professionals face and attempt to address and correct them. In this regard, we aimed to review the regional data and widely held expert opinions in the Arabian Gulf and provide a thematic review of the size of the problem of diabesity and its risk factors, challenges, and opportunities. We also wished to delineate the barriers to health promotion, disease prevention, and identify social customs contributing to these challenges. Lastly, we wished to address specific problems with particular relevance to the region such as minimal exercise and unhealthy nutrition, concerns during pregnancy, the subject of childhood obesity, the impact of Ramadan fasting, and the expanding role of bariatric surgery. Finally, general recommendations for prevention, evidence-based, and culturally competent management strategies are presented to be considered at the levels of the individual, community, and policymakers

Surgical site infection after gastrointestinal surgery in high-income, middle-income, and low-income countries: a prospective, international, multicentre cohort study

Background: Surgical site infection (SSI) is one of the most common infections associated with health care, but its importance as a global health priority is not fully understood. We quantified the burden of SSI after gastrointestinal surgery in countries in all parts of the world. Methods: This international, prospective, multicentre cohort study included consecutive patients undergoing elective or emergency gastrointestinal resection within 2-week time periods at any health-care facility in any country. Countries with participating centres were stratified into high-income, middle-income, and low-income groups according to the UN's Human Development Index (HDI). Data variables from the GlobalSurg 1 study and other studies that have been found to affect the likelihood of SSI were entered into risk adjustment models. The primary outcome measure was the 30-day SSI incidence (defined by US Centers for Disease Control and Prevention criteria for superficial and deep incisional SSI). Relationships with explanatory variables were examined using Bayesian multilevel logistic regression models. This trial is registered with ClinicalTrials.gov, number NCT02662231. Findings: Between Jan 4, 2016, and July 31, 2016, 13 265 records were submitted for analysis. 12 539 patients from 343 hospitals in 66 countries were included. 7339 (58·5%) patient were from high-HDI countries (193 hospitals in 30 countries), 3918 (31·2%) patients were from middle-HDI countries (82 hospitals in 18 countries), and 1282 (10·2%) patients were from low-HDI countries (68 hospitals in 18 countries). In total, 1538 (12·3%) patients had SSI within 30 days of surgery. The incidence of SSI varied between countries with high (691 [9·4%] of 7339 patients), middle (549 [14·0%] of 3918 patients), and low (298 [23·2%] of 1282) HDI (p < 0·001). The highest SSI incidence in each HDI group was after dirty surgery (102 [17·8%] of 574 patients in high-HDI countries; 74 [31·4%] of 236 patients in middle-HDI countries; 72 [39·8%] of 181 patients in low-HDI countries). Following risk factor adjustment, patients in low-HDI countries were at greatest risk of SSI (adjusted odds ratio 1·60, 95% credible interval 1·05–2·37; p=0·030). 132 (21·6%) of 610 patients with an SSI and a microbiology culture result had an infection that was resistant to the prophylactic antibiotic used. Resistant infections were detected in 49 (16·6%) of 295 patients in high-HDI countries, in 37 (19·8%) of 187 patients in middle-HDI countries, and in 46 (35·9%) of 128 patients in low-HDI countries (p < 0·001). Interpretation: Countries with a low HDI carry a disproportionately greater burden of SSI than countries with a middle or high HDI and might have higher rates of antibiotic resistance. In view of WHO recommendations on SSI prevention that highlight the absence of high-quality interventional research, urgent, pragmatic, randomised trials based in LMICs are needed to assess measures aiming to reduce this preventable complication

Global economic burden of unmet surgical need for appendicitis

Background: There is a substantial gap in provision of adequate surgical care in many low-and middle-income countries. This study aimed to identify the economic burden of unmet surgical need for the common condition of appendicitis. Methods: Data on the incidence of appendicitis from 170 countries and two different approaches were used to estimate numbers of patients who do not receive surgery: as a fixed proportion of the total unmet surgical need per country (approach 1); and based on country income status (approach 2). Indirect costs with current levels of access and local quality, and those if quality were at the standards of high-income countries, were estimated. A human capital approach was applied, focusing on the economic burden resulting from premature death and absenteeism. Results: Excess mortality was 4185 per 100 000 cases of appendicitis using approach 1 and 3448 per 100 000 using approach 2. The economic burden of continuing current levels of access and local quality was US $92 492 million using approach 1 and$73 141 million using approach 2. The economic burden of not providing surgical care to the standards of high-income countries was $95 004 million using approach 1 and$75 666 million using approach 2. The largest share of these costs resulted from premature death (97.7 per cent) and lack of access (97.0 per cent) in contrast to lack of quality. Conclusion: For a comparatively non-complex emergency condition such as appendicitis, increasing access to care should be prioritized. Although improving quality of care should not be neglected, increasing provision of care at current standards could reduce societal costs substantially