Selective Etching of LPCVD Si3N4 Over Si02 Using SF6

A Si3N4 etch process using a Plasmatherm 2406 etcher and SF6 was determined. RS1/Discover was used to design an experiment which varied SF6 flow rate, power, and pressure. ~ maximum nitride etch rate of 1300 ~/min. was obtained with a corresponding nitride to oxide selectivity of 2:1. Selectivities as high as 6:1 were obtained but with nitride - etch rates of less than 100 ~/min. ~n acceptable baseline process, having a nitride to oxide selectivity of 3.24:1 with a nitride etch rate of greater than 850 A/mm was established

Conference of Microelectronic Research 1990

https://scholarworks.rit.edu/meec_archive/1003/thumbnail.jp

Future media internet in 2017: vision, use cases and scenarios

This deliverable presents the developing vision of FLAME within the Future Media Internet (FMI). The FLAME FMI vision is described through use cases and scenarios for novel and high value media services to consumers and their combination with innovative infrastructure and network services. The vision addresses the changing nature of participation in content production workflows as well as demands for increasingly personalised, interactive, mobile and localised experiences. This deliverable describes scenarios and media service use cases, which leverage the content delivery optimizations provided by FLAME