Electrical activation of carbon in GaAs : implantation temperature effects

Carbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at 80 K compared to those implanted at RT or 300 °C, attaining a maximum hole concentration of 231019 cm23. The redistribution of the C profile during rapid thermal annealing at temperatures from 700 to 950 °C for 10 s was found negligible, independently of the implantation temperature. Similar improvements in the electrical properties were also verified in samples implanted at 80 K with a lower energy of 60 keV. We consider that despite the light mass of C ions, the reduced dynamic annealing at 80 K allows the accumulation of an abundance of As vacancies, which assist the C activation as a p-type dopant

Search for top squark pair production using dilepton final states in pp collision data collected at root s=13TeV

A search is presented for supersymmetric partners of the top quark (top squarks) in final states with two oppositely charged leptons (electrons or muons), jets identified as originating from bquarks, and missing transverse momentum. The search uses data from proton-proton collisions at root s = 13 TeV collected with the CMS detector, corresponding to an integrated luminosity of 137 fb(-1). Hypothetical signal events are efficiently separated from the dominant top quark pair production background with requirements on the significance of the missing transverse momentum and on transverse mass variables. No significant deviation is observed from the expected background. Exclusion limits are set in the context of simplified supersymmetric models with pair-produced lightest top squarks. For top squarks decaying exclusively to a top quark and a lightest neutralino, lower limits are placed at 95% confidence level on the masses of the top squark and the neutralino up to 925 and 450 GeV, respectively. If the decay proceeds via an intermediate chargino, the corresponding lower limits on the mass of the lightest top squark are set up to 850 GeV for neutralino masses below 420 GeV. For top squarks undergoing a cascade decay through charginos and sleptons, the mass limits reach up to 1.4 TeV and 900 GeV respectively for the top squark and the lightest neutralino.Peer reviewe

Bose-Einstein correlations of charged hadrons in proton-proton collisions at s\sqrt s = 13 TeV

Bose-Einstein correlations of charged hadrons are measured over a broad multiplicity range, from a few particles up to about 250 reconstructed charged hadrons in proton-proton collisions at $\sqrt{s}$ = 13 TeV. The results are based on data collected using the CMS detector at the LHC during runs with a special low-pileup configuration. Three analysis techniques with different degrees of dependence on simulations are used to remove the non-Bose-Einstein background from the correlation functions. All three methods give consistent results. The measured lengths of homogeneity are studied as functions of particle multiplicity as well as average pair transverse momentum and mass. The results are compared with data from both CMS and ATLAS at $\sqrt{s}$ = 7 TeV, as well as with theoretical predictions.[graphic not available: see fulltext]Bose-Einstein correlations of charged hadrons are measured over a broad multiplicity range, from a few particles up to about 250 reconstructed charged hadrons in proton-proton collisions at $\sqrt{s} =$ 13 TeV. The results are based on data collected using the CMS detector at the LHC during runs with a special low-pileup configuration. Three analysis techniques with different degrees of dependence on simulations are used to remove the non-Bose-Einstein background from the correlation functions. All three methods give consistent results. The measured lengths of homogeneity are studied as functions of particle multiplicity as well as average pair transverse momentum and mass. The results are compared with data from both CMS and ATLAS at $\sqrt{s} =$ 7 TeV, as well as with theoretical predictions

Performance of the CMS muon trigger system in proton-proton collisions at √s = 13 TeV

The muon trigger system of the CMS experiment uses a combination of hardware and software to identify events containing a muon. During Run 2 (covering 2015-2018) the LHC achieved instantaneous luminosities as high as 2 × 10 cm s while delivering proton-proton collisions at √s = 13 TeV. The challenge for the trigger system of the CMS experiment is to reduce the registered event rate from about 40 MHz to about 1 kHz. Significant improvements important for the success of the CMS physics program have been made to the muon trigger system via improved muon reconstruction and identification algorithms since the end of Run 1 and throughout the Run 2 data-taking period. The new algorithms maintain the acceptance of the muon triggers at the same or even lower rate throughout the data-taking period despite the increasing number of additional proton-proton interactions in each LHC bunch crossing. In this paper, the algorithms used in 2015 and 2016 and their improvements throughout 2017 and 2018 are described. Measurements of the CMS muon trigger performance for this data-taking period are presented, including efficiencies, transverse momentum resolution, trigger rates, and the purity of the selected muon sample. This paper focuses on the single- and double-muon triggers with the lowest sustainable transverse momentum thresholds used by CMS. The efficiency is measured in a transverse momentum range from 8 to several hundred GeV

Search for top squark production in fully hadronic final states in proton-proton collisions at root s=13 TeV

A search for production of the supersymmetric partners of the top quark, top squarks, is presented. The search is based on proton-proton collision events containing multiple jets, no leptons, and large transverse momentum imbalance. The data were collected with the CMS detector at the CERN LHC at a center-of-mass energy of 13 TeV, and correspond to an integrated luminosity of 137 fb(-1). The targeted signal production scenarios are direct and gluino-mediated top squark production, including scenarios in which the top squark and neutralino masses are nearly degenerate. The search utilizes novel algorithms based on deep neural networks that identify hadronically decaying top quarks and W bosons, which are expected in many of the targeted signal models. No statistically significant excess of events is observed relative to the expectation from the standard model, and limits on the top squark production cross section are obtained in the context of simplified supersymmetric models for various production and decay modes. Exclusion limits as high as 1310 GeVare established at the 95% confidence level on the mass of the top squark for direct top squark production models, and as high as 2260 GeV on the mass of the gluino for gluino-mediated top squark production models. These results represent a significant improvement over the results of previous searches for supersymmetry by CMS in the same final state.Peer reviewe

Electrical isolation in GaAs by light ion irradiation : the role of antisite defects

The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning of the irradiation, Rs increases with the accumulation of the dose. After reaching '109 V/h, Rs saturates, forming a plateau. This plateau is succeeded by a decreasing of Rs with the increase of the dose, denoting that conduction via damage-related mechanisms is taking place. The threshold dose to convert the conductive layer to a highly resistive one at room temperature or at 100 °C is found to scale with the inverse of the estimated number of displaced lattice atoms along the depth of the doped layer. Antisite defects formed by the replacement collisions are invoked to play the major role in isolation formation in GaAs by virtue of their lower sensitivity to dynamic annealing compared to other point defects

Thermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ions

The stability of the electrical isolation in n-type GaAs layers irradiated with ions of different mass is compared. The irradiations were performed with proper doses of 1H+, 4He+, or 11B+ ions to create specific damage concentration level which lead to: (i) the trapping of practically all the carriers (Rs ≈108 Ω/), (ii) the onset of hopping conduction (Rs ≈108 Ω/), and (iii) a significant hopping conduction (Rs ≈106 Ω/). Irrespectively of the ion mass, the temperature range for which the isolation is preserved, i.e., Rs>108 Ω/, extends up to 200 or ≈ 600 °C, respectively, for the cases (i) and (ii). In case (iii), this range comprises temperatures from ≈ 400 to 650 °C. Annealing stages at 200 and 400 °C recover in a great extent the conductivity and improve the carrier mobility in low dose irradiated samples [case (i)]. In samples irradiated to higher doses [cases (ii) and (iii)], the conductivity recovers in a single stage

Electrical isolation in GaAs by light ion irradiation : the role of antisite defects

The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning of the irradiation, Rs increases with the accumulation of the dose. After reaching '109 V/h, Rs saturates, forming a plateau. This plateau is succeeded by a decreasing of Rs with the increase of the dose, denoting that conduction via damage-related mechanisms is taking place. The threshold dose to convert the conductive layer to a highly resistive one at room temperature or at 100 °C is found to scale with the inverse of the estimated number of displaced lattice atoms along the depth of the doped layer. Antisite defects formed by the replacement collisions are invoked to play the major role in isolation formation in GaAs by virtue of their lower sensitivity to dynamic annealing compared to other point defects

Thermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ions

The stability of the electrical isolation in n-type GaAs layers irradiated with ions of different mass is compared. The irradiations were performed with proper doses of 1H+, 4He+, or 11B+ ions to create specific damage concentration level which lead to: (i) the trapping of practically all the carriers (Rs ≈108 Ω/), (ii) the onset of hopping conduction (Rs ≈108 Ω/), and (iii) a significant hopping conduction (Rs ≈106 Ω/). Irrespectively of the ion mass, the temperature range for which the isolation is preserved, i.e., Rs>108 Ω/, extends up to 200 or ≈ 600 °C, respectively, for the cases (i) and (ii). In case (iii), this range comprises temperatures from ≈ 400 to 650 °C. Annealing stages at 200 and 400 °C recover in a great extent the conductivity and improve the carrier mobility in low dose irradiated samples [case (i)]. In samples irradiated to higher doses [cases (ii) and (iii)], the conductivity recovers in a single stage