Optimization of the melt and quench behavior of phase-change RF switch to improve power handling

International audienceThis paper presents two methods to improve the reliability and the melting/quench behavior of phase change materials (PCM) used in radiofrequency (RF) switches. Results show benefits of the addition of an aluminum nitride heat spreading layer and the reduction of the distance between the substrate and the PCM. The reduction of the PCM cooling time shown in simulations and the power handling improvement observed in measurements on series structures support our proposed designs of GeTe based switches with RF gaps lengths over 4µm, allowing the power handling going to reach 31dBm in both ON and OFF states

RF Performance of Large Germanium Telluride Switches for Power Application

International audienceThis paper reports the integration and characterization of germanium telluride (GeTe) phase-change material (PCM)-based RF switches in series configuration with a 89 μm wide PCM element to address sub-6G power handling requirements. Switching conditions using indirect heating, as well as small- and large-signal measurements are performed in this work. Devices handle power up to 37 dBm and 29 dBm respectively in ON- and OFF-state at 915 MHz. These results estimate for the first time the performances of such wide GeTe switches compatible with cellular applications and investigate technological improvement guidelines