Implantation and Activation of Phosphorus in Amorphous and Crystalline Germanium Layers

We have investigated phosphorus implantation and activation in amorphous and crystalline Ge layers, deposited on Si substrates. The structure of the Ge layer has only limited influence on the dopant profile and diffusion after annealing. Surprisingly, crystalline Ge layers show better electrical results after implantation and dopant activation. For the amorphous layer, the solid phase epitaxy process is influenced in the neighborhood of P, leading to point defects, which inhibit electrical activation. This result implies that when a crystalline Ge layer is amorphized during implantation of high doses, the dopant activation can be significantly reduced. Reduced temperature ramping improves activation of P in amorphous Ge layers

Geolocation with respect to persona privacy for the Allergy Diary app - a MASK study

Background: Collecting data on the localization of users is a key issue for the MASK (Mobile Airways Sentinel network: the Allergy Diary) App. Data anonymization is a method of sanitization for privacy. The European Commission's Article 29 Working Party stated that geolocation information is personal data. To assess geolocation using the MASK method and to compare two anonymization methods in the MASK database to find an optimal privacy method. Methods: Geolocation was studied for all people who used the Allergy Diary App from December 2015 to November 2017 and who reported medical outcomes. Two different anonymization methods have been evaluated: Noise addition (randomization) and k-anonymity (generalization). Results: Ninety-three thousand one hundred and sixteen days of VAS were collected from 8535 users and 54,500 (58. 5%) were geolocalized, corresponding to 5428 users. Noise addition was found to be less accurate than k-anonymity using MASK data to protect the users' life privacy. Discussion: k-anonymity is an acceptable method for the anonymization of MASK data and results can be used for other databases.Peer reviewe

Control of Flowering in Strawberries

Strawberries (Fragaria sp.) are small perennial plants capable of both sexual reproduction through seeds and clonal reproduction via runners. Because vegetative and generative developmental programs are tightly connected, the control of flowering is presented here in the context of the yearly growth cycle. The rosette crown of strawberry consists of a stem with short internodes produced from the apical meristem. Each node harbors one trifoliate leaf and an axillary bud. The fate of axillary buds is dictated by environmental conditions; high temperatures and long days (LDs) promote axillary bud development into runners, whereas cool temperature and short days (SDs) favor the formation of branch crowns. SDs and cool temperature also promote flowering; under these conditions, the main shoot apical meristem is converted into a terminal inflorescence, and vegetative growth is continued from the uppermost axillary branch crown. The environmental factors that regulate vegetative and generative development in strawberries have been reasonably well characterized and are reviewed in the first two chapters. The genetic basis of the physiological responses in strawberries is much less clear. To provide a point of reference for the flowering pathways described in strawberries so far, a short review on the molecular mechanisms controlling flowering in the model plant Arabidopsis is given. The last two chapters will then describe the current knowledge on the molecular mechanisms controlling the physiological responses in strawberries.Peer reviewe

Ohmic contact formation on n-type Ge

Severe Fermi level pinning at the interface between n-Ge and a metal, leads to the formation of a Schottky barrier, almost independent on the metal work function. Therefore it seems impossible to form metal Ohmic contacts on moderately, n-type doped Ge layers. For p-type Ge the Fermi level pinning works opposite: all metal contacts show Ohmic behavior. This fixed behavior can be altered by the introduction of a thin Ge3N4 layer. Ge3N4 seems effective in reducing Fermi level pinning and therefore allows the formation of Ohmic contacts on n-type Ge and a rectifying contact on p-type Ge

Influence of Mineral Nutrients on Strawberry Fruit Quality and Their Accumulation in Plants Organs: A Review

none5mixedR. Nestby; F. Lieten; D. Pivot; C. Raynal Lacroix; M. TagliaviniR. Nestby; F. Lieten; D. Pivot; C. Raynal Lacroix; M. Tagliavin