210 research outputs found
Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers
The room-temperature effective mobilities of pseudomorphic Si/Si0.64Ge0.36/Si p-metal-oxidesemiconductor field effect transistors are reported. The peak mobility in the buried SiGe channel increases with silicon cap thickness. It is argued that SiO2/Si interface roughness is a major source of scattering in these devices, which is attenuated for thicker silicon caps. It is also suggested that segregated Ge in the silicon cap interferes with the oxidation process, leading to increased SiO2/Si interface roughness in the case of thin silicon caps
Interfacial engineering of semiconductor–superconductor junctions for high performance micro-coolers
The control of electronic and thermal transport through material interfaces is crucial for numerous micro and nanoelectronics applications and quantum devices. Here we report on the engineering of the electro-thermal properties of semiconductor-superconductor (Sm-S) electronic cooler junctions by a nanoscale insulating tunnel barrier introduced between the Sm and S electrodes. Unexpectedly, such an interface barrier does not increase the junction resistance but strongly reduces the detrimental sub-gap leakage current. These features are key to achieving high cooling power tunnel junction refrigerators, and we demonstrate unparalleled performance in silicon-based Sm-S electron cooler devices with orders of magnitudes improvement in the cooling power in comparison to previous works. By adapting the junctions in strain-engineered silicon coolers we also demonstrate efficient electron temperature reduction from 300 mK to below 100 mK. Investigations on junctions with different interface quality indicate that the previously unexplained sub-gap leakage current is strongly influenced by the Sm-S interface states. These states often dictate the junction electrical resistance through the well-known Fermi level pinning effect and, therefore, superconductivity could be generally used to probe and optimize metal-semiconductor contact behaviour
Incentives, inequality and taxation:The Meade Committee Report on the Structure and Reform of Direct Taxation (1978)
Low frequency noise in Si and Si/SiGe/Si PMOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2
Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise
The characterization of the distant blazar GB6 J1239+0443 from flaring and low activity periods
In 2008 AGILE and Fermi detected gamma-ray flaring activity from the
unidentified EGRET source 3EG J1236+0457, recently associated with a flat
spectrum radio quasar GB6 J1239+0443 at z=1.762. The optical counterpart of the
gamma-ray source underwent a flux enhancement of a factor 15-30 in 6 years, and
of ~10 in six months. We interpret this flare-up in terms of a transition from
an accretion-disk dominated emission to a synchrotron-jet dominated one. We
analysed a Sloan Digital Sky Survey (SDSS) archival optical spectrum taken
during a period of low radio and optical activity of the source. We estimated
the mass of the central black hole using the width of the CIV emission line. In
our work, we have also investigated SDSS archival optical photometric data and
UV GALEX observations to estimate the thermal-disk emission contribution of GB6
J1239+0443. Our analysis of the gamma-ray data taken during the flaring
episodes indicates a flat gamma-ray spectrum, with an extension of up to 15
GeV, with no statistically-relevant sign of absorption from the broad line
region, suggesting that the blazar-zone is located beyond the broad line
region. This result is confirmed by the modeling of the broad-band spectral
energy distribution (well constrained by the available multiwavelength data) of
the flaring activity periods and by the accretion disk luminosity and black
hole mass estimated by us using archival data.Comment: 30 pages, 7 figures, 4 tables MNRAS Accepted on 2012 June 1
Identification of markers associated with global changes in DNA methylation regulation in cancers
The Physics of the B Factories
This work is on the Physics of the B Factories. Part A of this book contains a brief description of the SLAC and KEK B Factories as well as their detectors, BaBar and Belle, and data taking related issues. Part B discusses tools and methods used by the experiments in order to obtain results. The results themselves can be found in Part C
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