Precision tau physics

Precise measurements of the lepton properties provide stringent tests of the Standard Model and accurate determinations of its parameters. We overview the present status of tau physics, highlighting the most recent developments, and discuss the prospects for future improvements. The leptonic decays of the tau lepton probe the structure of the weak currents and the universality of their couplings to the W boson. The universality of the leptonic Z couplings has also been tested through Z -> l(+)l(-) decays. The hadronic tau decay modes constitute an ideal tool for studying low-energy effects of the strong interaction in very clean conditions. Accurate determinations of the QCD coupling and the Cabibbo mixing V-us have been obtained with tau data. The large mass of the tau opens the possibility to study many kinematically-allowed exclusive decay modes and extract relevant dynamical information. Violations of flavour and CP conservation laws can also be searched for with tau decays. Related subjects such as μdecays, the electron and muon anomalous magnetic moments, neutrino mixing and B-meson decays into tau leptons are briefly covered. Being one the fermions most strongly coupled to the scalar sector, the tau lepton is playing now a very important role at the LHC as a tool to test the Higgs properties and search for new physics at higher scales

Energetics and carrier transport in doped Si/SiO2 quantum dots.

In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltages, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells