45 research outputs found
Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors
A theory for longitudinal (T1) and transverse (T2) electron spin coherence
times in zincblende semiconductor quantum wells is developed based on a
non-perturbative nanostructure model solved in a fourteen-band restricted basis
set. Distinctly different dependences of coherence times on mobility,
quantization energy, and temperature are found from previous calculations.
Quantitative agreement between our calculations and measurements is found for
GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.Comment: 11 pages, 3 figure
Spin relaxation in (110) and (001) InAs/GaSb superlattices
We report an enhancement of the electron spin relaxation time (T1) in a (110)
InAs/GaSb superlattice by more than an order of magnitude (25 times) relative
to the corresponding (001) structure. The spin dynamics were measured using
polarization sensitive pump probe techniques and a mid-infrared, subpicosecond
PPLN OPO. Longer T1 times in (110) superlattices are attributed to the
suppression of the native interface asymmetry and bulk inversion asymmetry
contributions to the precessional D'yakonov Perel spin relaxation process.
Calculations using a nonperturbative 14-band nanostructure model give good
agreement with experiment and indicate that possible structural inversion
asymmetry contributions to T1 associated with compositional mixing at the
superlattice interfaces may limit the observed spin lifetime in (110)
superlattices. Our findings have implications for potential spintronics
applications using InAs/GaSb heterostructures.Comment: 4 pages, 2 figure
Intersubband spin-density excitations in quantum wells with Rashba spin splitting
In inversion-asymmetric semiconductors, spin-orbit coupling induces a
k-dependent spin splitting of valence and conduction bands, which is a
well-known cause for spin decoherence in bulk and heterostructures.
Manipulating nonequilibrium spin coherence in device applications thus requires
understanding how valence and conduction band spin splitting affects carrier
spin dynamics. This paper studies the relevance of this decoherence mechanism
for collective intersubband spin-density excitations (SDEs) in quantum wells. A
density-functional formalism for the linear spin-density matrix response is
presented that describes SDEs in the conduction band of quantum wells with
subbands that may be non-parabolic and spin-split due to bulk or structural
inversion asymmetry (Rashba effect). As an example, we consider a 40 nm
GaAs/AlGaAs quantum well, including Rashba spin splitting of the conduction
subbands. We find a coupling and wavevector-dependent splitting of the
longitudinal and transverse SDEs. However, decoherence of the SDEs is not
determined by subband spin splitting, due to collective effects arising from
dynamical exchange and correlation.Comment: 10 pages, 4 figure
Spin dynamics in semiconductors
This article reviews the current status of spin dynamics in semiconductors
which has achieved a lot of progress in the past years due to the fast growing
field of semiconductor spintronics. The primary focus is the theoretical and
experimental developments of spin relaxation and dephasing in both spin
precession in time domain and spin diffusion and transport in spacial domain. A
fully microscopic many-body investigation on spin dynamics based on the kinetic
spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published
in Physics Reports
Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and
manipulation of spin degrees of freedom in solid-state systems. This article
reviews the current status of this subject, including both recent advances and
well-established results. The primary focus is on the basic physical principles
underlying the generation of carrier spin polarization, spin dynamics, and
spin-polarized transport in semiconductors and metals. Spin transport differs
from charge transport in that spin is a nonconserved quantity in solids due to
spin-orbit and hyperfine coupling. The authors discuss in detail spin
decoherence mechanisms in metals and semiconductors. Various theories of spin
injection and spin-polarized transport are applied to hybrid structures
relevant to spin-based devices and fundamental studies of materials properties.
Experimental work is reviewed with the emphasis on projected applications, in
which external electric and magnetic fields and illumination by light will be
used to control spin and charge dynamics to create new functionalities not
feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes
from the published versio