Column ratio mapping: a processing technique for atomic resolution high angle annular dark field(HAADF) images

An image processing technique is presented for atomic resolution high-angle annular dark-field (HAADF) images that have been acquired using scanning transmission electron microscopy (STEM). This technique is termed column ratio mapping and involves the automated process of measuring atomic column intensity ratios in high-resolution HAADF images. This technique was developed to provide a fuller analysis of HAADF images than the usual method of drawing single intensity line profiles across a few areas of interest. For instance, column ratio mapping reveals the compositional distribution across the whole HAADF image and allows a statistical analysis and an estimation of errors. This has proven to be a very valuable technique as it can provide a more detailed assessment of the sharpness of interfacial structures from HAADF images. The technique of column ratio mapping is described in terms of a [1 1 0]-oriented zinc-blende structured AlAs/GaAs superlattice using the 1 Å-scale resolution capability of the aberration-corrected SuperSTEM 1 instrument

Experimental evaluation of interfaces using atomic-resolution high angle annular dark field (HAADF) imaging

Aberration-corrected highangleannulardarkfield (HAADF) imaging in scanning transmission electron microscopy (STEM) can now be performed at atomic-resolution. This is an important tool for the characterisation of the latest semiconductor devices that require individual layers to be grown to an accuracy of a few atomic layers. However, the actual quantification of interfacial sharpness at the atomic-scale can be a complicated matter. For instance, it is not clear how the use of the total, atomic column or background HAADF signals can affect the measured sharpness or individual layer widths. Moreover, a reliable and consistent method of measurement is necessary. To highlight these issues, two types of AlAs/GaAs interfaces were studied in-depth by atomic-resolutionHAADFimaging. A method of analysis was developed in order to map the various HAADF signals across an image and to reliably determine interfacial sharpness. The results demonstrated that the level of perceived interfacial sharpness can vary significantly with specimen thickness and the choice of HAADF signal. Individual layer widths were also shown to have some dependence on the choice of HAADF signal. Hence, it is crucial to have an awareness of which part of the HAADF signal is chosen for analysis along with possible specimen thickness effects for future HAADF studies performed at the scale of a few atomic layers

Spectroscopic imaging of single atoms within a bulk solid

The ability to localize, identify and measure the electronic environment of individual atoms will provide fundamental insights into many issues in materials science, physics and nanotechnology. We demonstrate, using an aberration-corrected scanning transmission microscope, the spectroscopic imaging of single La atoms inside CaTiO3. Dynamical simulations confirm that the spectroscopic information is spatially confined around the scattering atom. Furthermore we show how the depth of the atom within the crystal may be estimated.Comment: 4 pages and 3 figures. Accepted in Phys.Rev.Let

Atomic Configuration of Nitrogen Doped Single-Walled Carbon Nanotubes

Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically-resolved electron energy-loss spectroscopy to detect individual nitrogen dopants in single-walled carbon nanotubes and compared with first principles calculations. We demonstrate that nitrogen doping occurs as single atoms in different bonding configurations: graphitic-like and pyrrolic-like substitutional nitrogen neighbouring local lattice distortion such as Stone-Thrower-Wales defects. The stability under the electron beam of these nanotubes has been studied in two extreme cases of nitrogen incorporation content and configuration. These findings provide key information for the applications of these nanostructures.Comment: 25 pages, 13 figure

Buckling Testing and Analysis of Honeycomb Sandwich Panel Arc Segments of a Full-Scale Fairing Barrel: Comparison of In- and Out-of-Autoclave Facesheet Configurations

Four honeycomb sandwich panels, representing 1/16th arc segments of a 10-m diameter barrel section of the Heavy Lift Launch Vehicle, were manufactured and tested under the NASA Composites for Exploration and the NASA Constellation Ares V programs. Two configurations were chosen for the panels: 6-ply facesheets with 1.125 in. honeycomb core and 8-ply facesheets with 1.0 in. honeycomb core. Additionally, two separate carbon fiber/epoxy material systems were chosen for the facesheets: in-autoclave IM7/977-3 and out-of-autoclave T40-800b/5320-1. Smaller 3 ft. by 5 ft. panels were cut from the 1/16th barrel sections and tested under compressive loading. Furthermore, linear eigenvalue and geometrically nonlinear finite element analyses were performed to predict the compressive response of each 3 ft. by 5 ft. panel. To improve the robustness of the geometrically nonlinear finite element model, measured surface imperfections were included in the geometry of the model. Both the linear and nonlinear models yielded good qualitative and quantitative predictions. Additionally, it was correctly predicted that the panel would fail in buckling prior to failing in strength. Furthermore, several imperfection studies were performed to investigate the influence of geometric imperfections, fiber angle misalignments, and three-dimensional effects on the compressive response of the panel

Effects of epitaxial strain on the growth mechanism of YBa2Cu3O7-x thin films in [YBa2Cu3O7-x / PrBa2Cu3O7-x] superlattices

We report on the growth mechanism of YBa2Cu3O7-x (YBCO). Our study is based on the analysis of ultrathin, YBa2Cu3O7-x layers in c-axis oriented YBa2Cu3O7-x / PrBa2Cu3O7-x superlattices. We have found that the release of epitaxial strain in very thin YBCO layers triggers a change in the dimensionality of the growth mode. Ultrathin, epitaxially strained, YBCO layers with thickness below 3 unit cells grow in a block by block two dimensional mode coherent over large lateral distances. Meanwhile, when thickness increases, and the strain relaxes, layer growth turns into three dimensional, resulting in rougher layers and interfaces.Comment: 10 pages + 9 figures, accepted in Phys. Rev.

Electron microscopy of quantum dots

This brief review describes the different types of semiconductor quantum dost systems, their main applications and which types of microscopy methods are used to characterize them. Emphasis is put on the need for a comprehensive investigation of their size distribution, microstructure, chemical composition, strain state and electronic properties, all of which influence the optical properties and can be measured by different types of imaging, diffraction and spectroscopy methods in an electron microscope