Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (V$_o$) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two V$_o$ states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient indicating a clear role of atmospheric O$_2$ on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs

Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks

A microscopic picture for the progressive leakage current growth in electrically stressed HfxSi1−xON/SiON gate stacks in metal-oxide-semiconductor transistors based on the physics of mesoscopic conductors is proposed. The breakdown spot is modeled as a nanoconstriction connecting two electron reservoirs. We show that after eliminating the tunnelingcurrent component that flows through the nondamaged device area, the postbreakdown conductance exhibits levels of the order of the quantum unit 2e2/h, where e is the electron charge and h the Planck's constant, as is expected for atomic-sized contacts. Similarities and differences with previous studied systems are discussed

Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibited remarkable diode behavior and good rectifying character with low leakage current under reverse bias. The presence of the ZnO interlayer film significantly reduced the parasitic and leakage currents across the barrier, improved the quality of the heterostructure, made the energy band between AZO and Cu2O layers smoother, and eliminated the possibility of interface recombination, leading to much longer electron lifetime

PERSISTENCE OF PH+/CD34+ CELLS IN CHRONIC MYELOID LEUKEMIA PATIENTS IN PROLONGED COMPLETE CYTOGENETIC REMISSION FOLLOWING IMATINIB MESYLATE TREATMENT

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A partial consequence account of truthlikeness

Popper\u2019s original definition of truthlikeness relied on a central insight: that truthlikeness combines truth and information, in the sense that a proposition is closer to the truth the more true consequences and the less false consequences it entails. As intuitively compelling as this definition may be, it is untenable, as proved long ago; still, one can arguably rely on Popper\u2019s intuition to provide an adequate account of truthlikeness. To this aim, we mobilize some classical work on partial entailment in defining a new measure of truthlikeness which satisfies a number of desiderata. The resulting account has some interesting and surprising connections with other accounts on the market, thus shedding new light on current attempts of systematizing different approaches to verisimilitude

Light harvesting with Ge quantum dots embedded in SiO2or Si3N4

Germanium quantum dots (QDs) embedded in SiO2or in Si3N4have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850°C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 3-9 nm range in the SiO2matrix, or in the 1-2 nm range in the Si3N4matrix, as measured by transmission electron microscopy. Thus, Si3N4matrix hosts Ge QDs at higher density and more closely spaced than SiO2matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si3N4matrix in comparison with those in the SiO2host. Light absorption by Ge QDs is shown to be more effective in Si3N4matrix, due to the optical bandgap (0.9-1.6 eV) being lower than in SiO2matrix (1.2-2.2 eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si3N4matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices. © 2014 AIP Publishing LLC

Expected Performance of the ATLAS Experiment - Detector, Trigger and Physics

A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance of b-tagging and the trigger. The physics potential for a variety of interesting physics processes, within the Standard Model and beyond, is examined. The study comprises a series of notes based on simulations of the detector and physics processes, with particular emphasis given to the data expected from the first years of operation of the LHC at CERN

Single hadron response measurement and calorimeter jet energy scale uncertainty with the ATLAS detector at the LHC

The uncertainty on the calorimeter energy response to jets of particles is derived for the ATLAS experiment at the Large Hadron Collider (LHC). First, the calorimeter response to single isolated charged hadrons is measured and compared to the Monte Carlo simulation using proton-proton collisions at centre-of-mass energies of sqrt(s) = 900 GeV and 7 TeV collected during 2009 and 2010. Then, using the decay of K_s and Lambda particles, the calorimeter response to specific types of particles (positively and negatively charged pions, protons, and anti-protons) is measured and compared to the Monte Carlo predictions. Finally, the jet energy scale uncertainty is determined by propagating the response uncertainty for single charged and neutral particles to jets. The response uncertainty is 2-5% for central isolated hadrons and 1-3% for the final calorimeter jet energy scale.Comment: 24 pages plus author list (36 pages total), 23 figures, 1 table, submitted to European Physical Journal