Nivel de conocimientos y prevención de complicaciones de diabetes mellitus tipo II en internos de enfermería de una Universidad de Lima, 2015

El principal objetivo de esta investigación es determinar la relación entre el nivel de conocimientos y el nivel de prevención de complicaciones de diabetes mellitus tipo II en internos de enfermería de una universidad de Lima, 2015. La investigación realizada fue de enfoque cuantitativo, de tipo básico, con un diseño no experimental, transeccional correlacional. La población estuvo conformada por 25 estudiantes internistas hospitalarios de enfermería de una universidad de Lima, 2015, durante el periodo académico 2015-I, y la muestra fue causal constituida por los 25 sujetos. Se empleó como técnica de recolección de datos la técnica de evaluación educativa, que hizo uso de dos instrumentos denominados prueba pedagógica o test de rendimiento: Una prueba sobre el nivel de conocimientos de diabetes mellitus tipo II, y otro prueba sobre el nivel de prevención de complicaciones de diabetes mellitus tipo II. La validez de contenido de ambos cuestionarios fue a través de Juicio de Expertos con un resultado de suficiente y la confiabilidad de sus instrumentos fue fuerte, realizados mediante la Kuder Richardson 20, cuyo valor fue 0.788 para la prueba sobre el nivel de conocimientos de diabetes mellitus tipo II (20 ítems) y 0.728 para la prueba sobre el nivel de prevención de complicaciones de diabetes mellitus tipo II (20 ítems). Los resultados de la investigación nos permitieron concluir que: Existe relación significativa entre el nivel de conocimientos y el nivel de prevención de complicaciones de diabetes mellitus tipo II en internos de enfermería de una universidad de Lima, 2015, con un nivel de significancia de 0.05 y Rho de Spearman = 0.903 y p-valor = 0.000 < 0.05. (Correlación positiva muy fuerte).Universidad Nacional de Educación Enrique Guzmán y Valle.Tesi

Hole spin relaxation in intrinsic and pp-type bulk GaAs

We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence and the nonpolar hole-optical-phonon interaction, both of which are demonstrated to be of great importance to the hole spin relaxation. The relative contributions of the D'yakonov-Perel' and Elliott-Yafet mechanisms on hole spin relaxation are also analyzed. In our calculation, the screening constant, playing an important role in the hole spin relaxation, is treated with the random phase approximation. In intrinsic GaAs, our result shows good agreement with the experiment data at room temperature, where the hole spin relaxation is demonstrated to be dominated by the Elliott-Yafet mechanism. We also find that the hole spin relaxation strongly depends on the temperature and predict a valley in the density dependence of the hole spin relaxation time at low temperature due to the hole-electron scattering. In $p$-type GaAs, we predict a peak in the spin relaxation time against the hole density at low temperature, which originates from the distinct behaviors of the screening in the degenerate and nondegenerate regimes. The competition between the screening and the momentum exchange during scattering events can also lead to a valley in the density dependence of the hole spin relaxation time in the low density regime. At high temperature, the effect of the screening is suppressed due to the small screening constant. Moreover, we predict a nonmonotonic dependence of the hole spin relaxation time on temperature associated with the screening together with the hole-phonon scattering. Finally, we find that the D'yakonov-Perel' mechanism can markedly contribute to the .... (omitted due to the limit of space)Comment: 11 pages, 7 figures, Phys. Rev. B, in pres

Spin relaxation in nn-type ZnO quantum wells

We perform an investigation on the spin relaxation for $n$-type ZnO (0001) quantum wells by numerically solving the kinetic spin Bloch equations with all the relevant scattering explicitly included. We show the temperature and electron density dependence of the spin relaxation time under various conditions such as impurity density, well width, and external electric field. We find a peak in the temperature dependence of the spin relaxation time at low impurity density. This peak can survive even at 100 K, much higher than the prediction and measurement value in GaAs. There also exhibits a peak in the electron density dependence at low temperature. These two peaks originate from the nonmonotonic temperature and electron density dependence of the Coulomb scattering. The spin relaxation time can reach the order of nanosecond at low temperature and high impurity density.Comment: 6 pages, 4 figure

Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells

Hole spin relaxation in [001] strained asymmetric Si/Si$_{0.7}$Ge$_{0.3}$ (Ge/Si$_{0.3}$Ge$_{0.7}$) quantum wells is investigated in the situation with only the lowest hole subband being relevant. The effective Hamiltonian of the lowest hole subband is obtained by the subband L\"owdin perturbation method in the framework of the six-band Luttinger ${\bf k}\cdot{\bf p}$ model, with sufficient basis functions included. The lowest hole subband in Si/SiGe quantum wells is light-hole like with the Rashba spin-orbit coupling term depending on momentum both linearly and cubically, while that in Ge/SiGe quantum wells is a heavy hole state with the Rashba spin-orbit coupling term depending on momentum only cubically. The hole spin relaxation is investigated by means of the fully microscopic kinetic spin Bloch equation approach, with all the relevant scatterings considered. It is found that the hole-phonon scattering is very weak, which makes the hole-hole Coulomb scattering become very important. The hole system in Si/SiGe quantum wells is generally in the strong scattering limit, while that in Ge/SiGe quantum wells can be in either the strong or the weak scattering limit. The Coulomb scattering leads to a peak in both the temperature and hole density dependences of spin relaxation time in Si/SiGe quantum wells, located around the crossover between the degenerate and nondegenerate regimes. Nevertheless, the Coulomb scattering leads to not only a peak but also a valley in the temperature dependence of spin relaxation time in Ge/SiGe quantum wells.... (The remaining is omitted due to the limit of space).Comment: 12 pages, 11 figures, PRB in pres

Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach

Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron--nonmagnetic-impurity, electron-phonon, electron-electron, electron-hole, and electron-hole exchange (the Bir-Aronov-Pikus mechanism) scatterings are explicitly included. The Elliot-Yafet mechanism is also fully incorporated. This approach offers a way toward thorough understanding of electron spin relaxation both near and far away from the equilibrium in the metallic regime. The dependence of the spin relaxation time on electron density, temperature, initial spin polarization, photo-excitation density, and hole density are studied thoroughly with the underlying physics analyzed. In contrast to the previous investigations in the literature, we find that: (i) In $n$-type materials, the Elliot-Yafet mechanism is {\em less} important than the D'yakonov-Perel' mechanism, even for the narrow band-gap semiconductors such as InSb and InAs. (ii) The density dependence of the spin relaxation time is nonmonotonic and we predict a {\em peak} in the metallic regime in both $n$-type and intrinsic materials. (iii) In intrinsic materials, the Bir-Aronov-Pikus mechanism is found to be negligible compared with the D'yakonov-Perel' mechanism. We also predict a peak in the temperature dependence of spin relaxation time which is due to the nonmonotonic temperature dependence of the electron-electron Coulomb scattering in intrinsic materials with small initial spin polarization. (iv) In $p$-type III-V semiconductors, ...... (the remaining is omitted here due to the limit of space)Comment: 25 pages, 17 figure

Spin dynamics in semiconductors

This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports