Technologies for 3D Heterogeneous Integration

3D-Integration is a promising technology towards higher interconnect densities and shorter wiring lengths between multiple chip stacks, thus achieving a very high performance level combined with low power consumption. This technology also offers the possibility to build up systems with high complexity just by combining devices of different technologies. For ultra thin silicon is the base of this integration technology, the fundamental processing steps will be described, as well as appropriate handling concepts. Three main concepts for 3D integration have been developed at IZM. The approach with the greatest flexibility called Inter Chip Via - Solid Liquid Interdiffusion (ICV-SLID) is introduced. This is a chip-to-wafer stacking technology which combines the advantages of the Inter Chip Via (ICV) process and the solid-liquid-interdiffusion technique (SLID) of copper and tin. The fully modular ICV-SLID concept allows the formation of multiple device stacks. A test chip was designed and the total process sequence of the ICV-SLID technology for the realization of a three-layer chip-to-wafer stack was demonstrated. The proposed wafer-level 3D integration concept has the potential for low cost fabrication of multi-layer high-performance 3D-SoCs and is well suited as a replacement for embedded technologies based on monolithic integration. To address yield issues a wafer-level chip-scale handling is presented as well, to select known-good dies and work on them with wafer-level process sequences before joining them to integrated stacks.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838

Channel Characterization for Chip-scale Wireless Communications within Computing Packages

Wireless Network-on-Chip (WNoC) appears as a promising alternative to conventional interconnect fabrics for chip-scale communications. WNoC takes advantage of an overlaid network composed by a set of millimeter-wave antennas to reduce latency and increase throughput in the communication between cores. Similarly, wireless inter-chip communication has been also proposed to improve the information transfer between processors, memory, and accelerators in multi-chip settings. However, the wireless channel remains largely unknown in both scenarios, especially in the presence of realistic chip packages. This work addresses the issue by accurately modeling flip-chip packages and investigating the propagation both its interior and its surroundings. Through parametric studies, package configurations that minimize path loss are obtained and the trade-offs observed when applying such optimizations are discussed. Single-chip and multi-chip architectures are compared in terms of the path loss exponent, confirming that the amount of bulk silicon found in the pathway between transmitter and receiver is the main determinant of losses.Comment: To be presented 12th IEEE/ACM International Symposium on Networks-on-Chip (NOCS 2018); Torino, Italy; October 201

On signalling over through-silicon via (TSV) interconnects in 3-D integrated circuits.

This paper discusses signal integrity (SI) issues and signalling techniques for Through Silicon Via (TSV) interconnects in 3-D Integrated Circuits (ICs). Field-solver extracted parasitics of TSVs have been employed in Spice simulations to investigate the effect of each parasitic component on performance metrics such as delay and crosstalk and identify a reduced-order electrical model that captures all relevant effects. We show that in dense TSV structures voltage-mode (VM) signalling does not lend itself to achieving high data-rates, and that current-mode (CM) signalling is more effective for high throughput signalling as well as jitter reduction. Data rates, energy consumption and coupled noise for the different signalling modes are extracted

Nature-Inspired Interconnects for Self-Assembled Large-Scale Network-on-Chip Designs

Future nano-scale electronics built up from an Avogadro number of components needs efficient, highly scalable, and robust means of communication in order to be competitive with traditional silicon approaches. In recent years, the Networks-on-Chip (NoC) paradigm emerged as a promising solution to interconnect challenges in silicon-based electronics. Current NoC architectures are either highly regular or fully customized, both of which represent implausible assumptions for emerging bottom-up self-assembled molecular electronics that are generally assumed to have a high degree of irregularity and imperfection. Here, we pragmatically and experimentally investigate important design trade-offs and properties of an irregular, abstract, yet physically plausible 3D small-world interconnect fabric that is inspired by modern network-on-chip paradigms. We vary the framework's key parameters, such as the connectivity, the number of switch nodes, the distribution of long- versus short-range connections, and measure the network's relevant communication characteristics. We further explore the robustness against link failures and the ability and efficiency to solve a simple toy problem, the synchronization task. The results confirm that (1) computation in irregular assemblies is a promising and disruptive computing paradigm for self-assembled nano-scale electronics and (2) that 3D small-world interconnect fabrics with a power-law decaying distribution of shortcut lengths are physically plausible and have major advantages over local 2D and 3D regular topologies

R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging

This report reviews current trends in the R&D of semiconductor pixellated sensors for vertex tracking and radiation imaging. It identifies requirements of future HEP experiments at colliders, needed technological breakthroughs and highlights the relation to radiation detection and imaging applications in other fields of science.Comment: 17 pages, 2 figures, submitted to the European Strategy Preparatory Grou

Through-silicon-via-aware prediction and physical design for multi-granularity 3D integrated circuits

The main objective of this research is to predict the wirelength, area, delay, and power of multi-granularity three-dimensional integrated circuits (3D ICs), to develop physical design methodologies and algorithms for the design of multi-granularity 3D ICs, and to investigate the impact of through-silicon vias (TSVs) on the quality of 3D ICs. This dissertation supports these objectives by addressing six research topics. The first pertains to analytical models that predict the interconnects of multi-granularity 3D ICs, and the second focuses on the development of analytical models of the capacitive coupling of TSVs. The third and the fourth topics present design methodologies and algorithms for the design of gate- and block-level 3D ICs, and the fifth topic pertains to the impact of TSVs on the quality of 3D ICs. The final topic addresses topography variation in 3D ICs. The first section of this dissertation presents TSV-aware interconnect prediction models for multi-granularity 3D ICs. As previous interconnect prediction models for 3D ICs did not take TSV area into account, they were not capable of predicting many important characteristics of 3D ICs related to TSVs. This section will present several previous interconnect prediction models that have been improved so that the area occupied by TSVs is taken into account. The new models show numerous important predictions such as the existence of the number of TSVs minimizing wirelength. The second section presents fast estimation of capacitive coupling of TSVs and wires. Since TSV-to-TSV and TSV-to-wire coupling capacitance is dependent on their relative locations, fast estimation of the coupling capacitance of a TSV is essential for the timing optimization of 3D ICs. Simulation results show that the analytical models presented in this section are sufficiently accurate for use at various design steps that require the computation of TSV capacitance. The third and fourth sections present design methodologies and algorithms for gate- and block-level 3D ICs. One of the biggest differences in the design of 2D and 3D ICs is that the latter requires TSV insertion. Since no widely-accepted design methodology designates when, where, and how TSVs are inserted, this work develops and presents several design methodologies for gate- and block-level 3D ICs and physical design algorithms supporting them. Simulation results based on GDSII-level layouts validate the design methodologies and present evidence of their effectiveness. The fifth section explores the impact of TSVs on the quality of 3D ICs. As TSVs become smaller, devices are shrinking, too. Since the relative size of TSVs and devices is more critical to the quality of 3D ICs than the absolute size of TSVs and devices, TSVs and devices should be taken into account in the study of the impact of TSVs on the quality of 3D ICs. In this section, current and future TSVs and devices are combined to produce 3D IC layouts and the impact of TSVs on the quality of 3D ICs is investigated. The final section investigates topography variation in 3D ICs. Since landing pads fabricated in the bottommost metal layer are attached to TSVs, they are larger than TSVs, so they could result in serious topography variation. Therefore, topography variation, especially in the bottommost metal layer, is investigated and two layout optimization techniques are applied to a global placement algorithm that minimizes the topography variation of the bottommost metal layer of 3D ICs.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Lee, Hsien-Hsin Sean; Committee Member: Mukhopadhyay, Saiba

Energy challenges for ICT

The energy consumption from the expanding use of information and communications technology (ICT) is unsustainable with present drivers, and it will impact heavily on the future climate change. However, ICT devices have the potential to contribute signi - cantly to the reduction of CO2 emission and enhance resource e ciency in other sectors, e.g., transportation (through intelligent transportation and advanced driver assistance systems and self-driving vehicles), heating (through smart building control), and manu- facturing (through digital automation based on smart autonomous sensors). To address the energy sustainability of ICT and capture the full potential of ICT in resource e - ciency, a multidisciplinary ICT-energy community needs to be brought together cover- ing devices, microarchitectures, ultra large-scale integration (ULSI), high-performance computing (HPC), energy harvesting, energy storage, system design, embedded sys- tems, e cient electronics, static analysis, and computation. In this chapter, we introduce challenges and opportunities in this emerging eld and a common framework to strive towards energy-sustainable ICT

Modeling of thermally induced skew variations in clock distribution network

Clock distribution network is sensitive to large thermal gradients on the die as the performance of both clock buffers and interconnects are affected by temperature. A robust clock network design relies on the accurate analysis of clock skew subject to temperature variations. In this work, we address the problem of thermally induced clock skew modeling in nanometer CMOS technologies. The complex thermal behavior of both buffers and interconnects are taken into account. In addition, our characterization of the temperature effect on buffers and interconnects provides valuable insight to designers about the potential impact of thermal variations on clock networks. The use of industrial standard data format in the interface allows our tool to be easily integrated into existing design flow