137 research outputs found

    PHOENEXS: System for Angle- and Spin-Resolved Photoemission at BESSY II

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    Article addresses overall performance, technical features and sample preparation facilities of movable endstation PHOENEXS at BESSY II which is used for spin- and angle-resolved photoemission

    Evidence for topological band inversion of the phase change material Ge2Sb2Te5

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    We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed upper bulk valence band shows a minimum at Gamma-bar being 0.3 eV below the Fermi level E_F and a circular Fermi contour around Gamma-bar with a dispersing diameter of 0.27-0.36 Anstroms^-1. This is in agreement with density functional theory calculations of the Petrov stacking sequence in the cubic phase which exhibits a topological surface state. The topologically trivial cubic KH stacking shows a valence band maximum at Gamma in line with all previous calculations of the hexagonal stable phase exhibiting the valence band maximum at Gamma for a trivial Z_2 topological invariant nu_0 and away from Gamma for non-trivial nu_0. Scanning tunneling spectroscopy exhibits a band gap of 0.4 eV around E_F

    One-dimensional electronic structure of phosphorene chains

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    Phosphorene, a 2D allotrope of phosphorus, is technologically very appealing because of its semiconducting properties and narrow band gap. Further reduction of the phosphorene dimensionality may spawn exotic properties of its electronic structure, including lateral quantum confinement and topological edge states. Phosphorene atomic chains self-assembled on Ag(111) have recently been characterized structurally but were found by angle-resolved photoemission (ARPES) to be electronically 2D. We show that these chains, although aligned equiprobably to three directions of the Ag(111) surface, can be characterized by ARPES because the three rotational variants are separated in the angular domain. The dispersion of the phosphorus band measured along and perpendicular to the chains reveals pronounced electronic confinement resulting in a 1D band, flat and dispersionless perpendicular to the chain direction in momentum space. Our density functional theory calculations reproduce the 1D band for the experimentally determined structure of P/Ag(111). We predict a semiconductor-to-metal phase transition upon increasing the density of the chain array so that a 2D structure would be metallic

    2D layered transport properties from topological insulator Bi2_2Se3_3 single crystals and micro flakes

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    Low-field magnetotransport measurements of topological insulators such as Bi2_2Se3_3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities (∌1019\sim10^{19} cm−3^{-3}) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi2_2Se3_3 single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.Comment: Sci. Rep. (2016

    Suppression of nematicity by tensile strain in multilayer FeSe/SrTiO3_3 films

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    The nematicity in multilayer FeSe/SrTiO3_3 films has been previously suggested to be enhanced with decreasing film thickness. Motivated by this, there have been many discussions about the competing relation between nematicity and superconductivity. However, the criterion for determining the nematicity strength in FeSe remains highly debated. The understanding of nematicity and its relation to superconductivity in FeSe films is therefore still controversial. Here, we fabricate multilayer FeSe/SrTiO3_3 films using molecular beam epitaxy and study the nematic properties by combining angle-resolved photoemission spectroscopy, nuclear magnetic resonance, and scanning tunneling microscopy experiments. We unambiguously demonstrate that, near the interface, the nematicity is suppressed by the SrTiO3_3-induced tensile strain; in the bulk region further away from the interface, the strength of nematicity recovers to the bulk value. Our results not only solve the controversy about the nematicity in multilayer FeSe films, but also offer valuable insights into the relationship between nematicity and superconductivity.Comment: 23 pages, 4 figure

    Electrical Transport Properties of Vanadium‐Doped Bi2Te2.4Se0.6

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    Vanadium‐doped Bi2–xTe2.4Se0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle‐resolved photoemission spectroscopy (ARPES) measurements shows gapless topological surface states for both vanadium concentrations. The Van‐der‐Pauw resistivity, the Hall charge carrier density, and the mobility in the temperature range from 0.3 to 300 K are strongly dependent on vanadium concentration, with carrier densities as low as 1.5 × 1016 cm−3 and mobilities as high as 570 cm2 V−1s−1. As expected for transport in gapless topological surface states, the resistivity, carrier density, and mobility are constant below 10 K. The magnetoresistance shows weak antilocalization for both vanadium concentrations in the same temperature range. The weak antilocalization is analyzed with the Hikami–Larkin–Nagaoka model, which yields phase‐coherence lengths of up to 250 nm for x = 0.015.Deutsche Forschungsgemeinschaft http://dx.doi.org/10.13039/501100001659Helmholtz-Gemeinschaft http://dx.doi.org/10.13039/501100001656Peer Reviewe

    Observation of Quantum-Tunneling Modulated Spin Texture in Ultrathin Topological Insulator Bi2Se3 Films

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    Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunneling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We observe strongly binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultra-thin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model which captures this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device.Comment: To appear in Nature Communications (2014); Expanded version of http://arxiv.org/abs/1307.548
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