A Complementary Resistive Switch-based Crossbar Array Adder

Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable interconnects, large-scale look-up tables or for sequential logic operations. However, without additional selector devices these approaches are not suited for use in large scale nanocrossbar memory arrays, which is the preferred architecture for ReRAM devices due to the minimum area consumption. To overcome this issue for the sequential logic approach, we recently introduced a novel concept, which is suited for passive crossbar arrays using complementary resistive switches (CRSs). CRS cells offer two high resistive storage states, and thus, parasitic sneak currents are efficiently avoided. However, until now the CRS-based logic-in-memory approach was only shown to be able to perform basic Boolean logic operations using a single CRS cell. In this paper, we introduce two multi-bit adder schemes using the CRS-based logic-in-memory approach. We proof the concepts by means of SPICE simulations using a dynamical memristive device model of a ReRAM cell. Finally, we show the advantages of our novel adder concept in terms of step count and number of devices in comparison to a recently published adder approach, which applies the conventional ReRAM-based sequential logic concept introduced by Borghetti et al.Comment: 12 pages, accepted for IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS), issue on Computing in Emerging Technologie

Insulator-to-metal transition of SrTiO3:Nb single crystal surfaces induced by Ar+ bombardment

In this paper, the effect of Ar+ bombardment of SrTiO3:Nb surface layers is investigated on the macro- and nanoscale using surface-sensitive methods. After bombardment, the stoichiometry and electronic structure are changed distinctly leading to an insulator-to-metal transition related to the change of the Ti "d" electron from d0 to d1 and d2. During bombardment, conducting islands are formed on the surface. The induced metallic state is not stable and can be reversed due to a redox process by external oxidation and even by self-reoxidation upon heating the sample to temperatures of 300{\deg}C.Comment: 4 pages, 4 figure

Lorentz and Polarization Correction for the Buerger Precession Method

In a previous publication it was shown that in the precession method the angular velocity with which the reciprocal lattice moves through the sphere of reflection is not constant and equal to the angular velocity of precession, but rather varies with the position of the precession axis, It attains its maximum or minimum value whenever this axis passes, respectively, through a vertical or a horizontal plane

Resistive Switching Assisted by Noise

We extend results by Stotland and Di Ventra on the phenomenon of resistive switching aided by noise. We further the analysis of the mechanism underlying the beneficial role of noise and study the EPIR (Electrical Pulse Induced Resistance) ratio dependence with noise power. In the case of internal noise we find an optimal range where the EPIR ratio is both maximized and independent of the preceding resistive state. However, when external noise is considered no beneficial effect is observed.Comment: To be published in "Theory and Applications of Nonlinear Dynamics: Model and Design of Complex Systems", Proceedings of ICAND 2012 (Springer, 2013

RETURN ON INVESTMENT IN SOCIAL NETWORKS

This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories. In a brief introduction, the basic switching mechanism of ECM cells is described and the historical development is sketched. In a second part, the full spectra of materials and material combinations used for memory device prototypes and for dedicated studies are presented. In a third part, the specific thermodynamics and kinetics of nanosized electrochemical cells are described. The overlapping of the space charge layers is found to be most relevant for the cell properties at rest. The major factors determining the functionality of the ECM cells are the electrode reaction and the transport kinetics. Depending on electrode and/or electrolyte material electron transfer, electro-crystallization or slow diffusion under strong electric fields can be rate determining. In the fourth part, the major device characteristics of ECM cells are explained. Emphasis is placed on switching speed, forming and SET/RESET voltage, R(ON) to R(OFF) ratio, endurance and retention, and scaling potentials. In the last part, circuit design aspects of ECM arrays are discussed, including the pros and cons of active and passive arrays. In the case of passive arrays, the fundamental sneak path problem is described and as well as a possible solution by two anti-serial (complementary) interconnected resistive switches per cell. Furthermore, the prospects of ECM with regard to further scalability and the ability for multi-bit data storage are addressed

Electrical current distribution across a metal-insulator-metal structure during bistable switching

Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.Comment: 8 pages, 7 figures, submitted to J. Appl. Phy

The Lorentz Factor for the Buerger Precession Method

The Lorentz factor for the Buerger precession method is derived. It turns out that the angular velocity of the motion of the reciprocal lattice through the sphere of reflection is not uniform as hitherto accepted. The Lorentz factor thus depends explicitly on all three cylindrical coordinates ξ, ζ, τ of the reciprocal lattice point under consideration and not on only as ξ and ζ