Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm

Silicon (Si) has been scaled below 10 nm in multigate and silicon-on-insulator (SOI) device technologies, but clearly Si thickness cannot be reduced indefinitely, as we will run out of atoms eventually. As thickness approaches 5 nm, surfaces and interfaces will significantly impact the electrical behavior of Si, and surface physics cannot be discounted. Below that, bulk material properties will be altered considerably in the few-monolayer limit. One of the most basic defining properties of a semiconductor is its conductivity. To improve conductivity, while inducing a channel by appropriate biasing, it is necessary to define an accurate impurity doping strategy to reduce parasitic resistance. In this paper, we investigated the changing electrical conductivity of SOI films as a function of the Si thickness, in the range of 3–66 nm. SOI films were ex situ doped using three different approaches: liquid/vapor phase monolayer doping of phosphorus using allyldiphenylphosphine, gas-phase doping of arsenic using arsine (AsH3), and room-temperature beam-line ion implantation of phosphorus. The circular transfer length method and micro-four-point probe measurements were used to determine the resistivity of the Si films, mitigating the contribution from contact resistance. The resistivity of the Si films was observed to increase with decreasing Si film thickness below 20 nm, with a dramatic increase observed for a Si thickness at 4.5 nm. This may drastically impact the number of parallel conduction paths (i.e., nanowires) required in gate-all-around devices. Density functional theory modeling indicates that the surface of the Si film with a thickness of 4.5 nm is energetically more favorable for the dopant atom compared to the core of the film

Operationalizing marketable blue carbon

The global carbon sequestration and avoided emissions potentially achieved via blue carbon is high (∼3% of annual global greenhouse gas emissions); however, it is limited by multidisciplinary and interacting uncertainties spanning the social, governance, financial, and technological dimensions. We compiled a transdisciplinary team of experts to elucidate these challenges and identify a way forward. Key actions to enhance blue carbon as a natural climate solution include improving policy and legal arrangements to ensure equitable sharing of benefits; improving stewardship by incorporating indigenous knowledge and values; clarifying property rights; improving financial approaches and accounting tools to incorporate co-benefits; developing technological solutions for measuring blue carbon sequestration at low cost; and resolving knowledge gaps regarding blue carbon cycles. Implementing these actions and operationalizing blue carbon will achieve measurable changes to atmospheric greenhouse gas concentrations, provide multiple co-benefits, and address national obligations associated with international agreements

Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

The advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to <20 nm are extracted for monolayer doping and beam-line ion implantation. Despite introducing significant crystal damage, P beam-line ion implantation beats allyldiphenylphosphine (ADP) P monolayer doping with a SiO2 cap in terms of lower Si resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Limitations in ADP P monolayer doping with a SiO2 cap are due to the difficulties in dopant incorporation, as it is based on in-diffusion, and P atoms must overcome a potential barrier on the Si surface

The state of the Martian climate

60°N was +2.0°C, relative to the 1981–2010 average value (Fig. 5.1). This marks a new high for the record. The average annual surface air temperature (SAT) anomaly for 2016 for land stations north of starting in 1900, and is a significant increase over the previous highest value of +1.2°C, which was observed in 2007, 2011, and 2015. Average global annual temperatures also showed record values in 2015 and 2016. Currently, the Arctic is warming at more than twice the rate of lower latitudes

Bose-Einstein Correlations of Three Charged Pions in Hadronic Z^0 Decays

Bose-Einstein Correlations (BEC) of three identical charged pions were studied in 4 x 10^6 hadronic Z^0 decays recorded with the OPAL detector at LEP. The genuine three-pion correlations, corrected for the Coulomb effect, were separated from the known two-pion correlations by a new subtraction procedure. A significant genuine three-pion BEC enhancement near threshold was observed having an emitter source radius of r_3 = 0.580 +/- 0.004 (stat.) +/- 0.029 (syst.) fm and a strength of \lambda_3 = 0.504 +/- 0.010 (stat.) +/- 0.041 (syst.). The Coulomb correction was found to increase the \lambda_3 value by \~9% and to reduce r_3 by ~6%. The measured \lambda_3 corresponds to a value of 0.707 +/- 0.014 (stat.) +/- 0.078 (syst.) when one takes into account the three-pion sample purity. A relation between the two-pion and the three-pion source parameters is discussed.Comment: 19 pages, LaTeX, 5 eps figures included, accepted by Eur. Phys. J.

Search for Higgs Bosons in e+e- Collisions at 183 GeV

The data collected by the OPAL experiment at sqrts=183 GeV were used to search for Higgs bosons which are predicted by the Standard Model and various extensions, such as general models with two Higgs field doublets and the Minimal Supersymmetric Standard Model (MSSM). The data correspond to an integrated luminosity of approximately 54pb-1. None of the searches for neutral and charged Higgs bosons have revealed an excess of events beyond the expected background. This negative outcome, in combination with similar results from searches at lower energies, leads to new limits for the Higgs boson masses and other model parameters. In particular, the 95% confidence level lower limit for the mass of the Standard Model Higgs boson is 88.3 GeV. Charged Higgs bosons can be excluded for masses up to 59.5 GeV. In the MSSM, mh > 70.5 GeV and mA > 72.0 GeV are obtained for tan{beta}>1, no and maximal scalar top mixing and soft SUSY-breaking masses of 1 TeV. The range 0.8 < tanb < 1.9 is excluded for minimal scalar top mixing and m{top} < 175 GeV. More general scans of the MSSM parameter space are also considered.Comment: 49 pages. LaTeX, including 33 eps figures, submitted to European Physical Journal

A Measurement of the Product Branching Ratio f(b->Lambda_b).BR(Lambda_b->Lambda X) in Z0 Decays

The product branching ratio, f(b->Lambda_b).BR(Lambda_b->Lambda X), where Lambda_b denotes any weakly-decaying b-baryon, has been measured using the OPAL detector at LEP. Lambda_b are selected by the presence of energetic Lambda particles in bottom events tagged by the presence of displaced secondary vertices. A fit to the momenta of the Lambda particles separates signal from B meson and fragmentation backgrounds. The measured product branching ratio is f(b->Lambda_b).BR(Lambda_b->Lambda X) = (2.67+-0.38(stat)+0.67-0.60(sys))% Combined with a previous OPAL measurement, one obtains f(b->Lambda_b).BR(Lambda_b->Lambda X) = (3.50+-0.32(stat)+-0.35(sys))%.Comment: 16 pages, LaTeX, 3 eps figs included, submitted to the European Physical Journal

Search for a Technicolor omega_T Particle in Events with a Photon and a b-quark Jet at CDF

If the Technicolor omega_T particle exists, a likely decay mode is omega_T -> gamma pi_T, followed by pi_T -> bb-bar, yielding the signature gamma bb-bar. We have searched 85 pb^-1 of data collected by the CDF experiment at the Fermilab Tevatron for events with a photon and two jets, where one of the jets must contain a secondary vertex implying the presence of a b quark. We find no excess of events above standard model expectations. We express the result of an exclusion region in the M_omega_T - M_pi_T mass plane.Comment: 14 pages, 2 figures. Available from the CDF server (PS with figs): http://www-cdf.fnal.gov/physics/pub98/cdf4674_omega_t_prl_4.ps FERMILAB-PUB-98/321-