5,559 research outputs found

    Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter

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    GaN device as one potential power electronics device has been gained much attention recently. One of the power conversion systems, ANPC inverter using GaN HEMT is potentially considered to be prospective usage of low loss and high efficiency. In this work, we demonstrate one optimised PWM scheme aims at balancing the device electro-thermal stress based on Parma PWM to control 3-Level ANPC GaN inverter. The method is to decrease the loss for switches account for the large loss and increase the loss for switches with less thermal stress initially. The simulation and experimental results prove the effectiveness of the optimised PWM in controlling the loss distribution

    Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter

    Get PDF
    GaN device as one potential power electronics device has been gained much attention recently. One of the power conversion systems, ANPC inverter using GaN HEMT is potentially considered to be prospective usage of low loss and high efficiency. In this work, we demonstrate one optimised PWM scheme aims at balancing the device electro-thermal stress based on Parma PWM to control 3-Level ANPC GaN inverter. The method is to decrease the loss for switches account for the large loss and increase the loss for switches with less thermal stress initially. The simulation and experimental results prove the effectiveness of the optimised PWM in controlling the loss distribution

    SiC power MOSFETs performance, robustness and technology maturity

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    Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespread use in the field, the transistors need to be thoroughly investigated and later validated for robustness and longer term stability and reliability. This paper proposes a review of commercial SiC power MOSFETs state-of-the-art characteristics and discusses trends and needs for further technology improvements, as well as device design and engineering advancements to meet the increasing demands of power electronics

    Constraints on the χ_(c1) versus χ_(c2) polarizations in proton-proton collisions at √s = 8 TeV

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    The polarizations of promptly produced χ_(c1) and χ_(c2) mesons are studied using data collected by the CMS experiment at the LHC, in proton-proton collisions at √s=8  TeV. The χ_c states are reconstructed via their radiative decays χ_c → J/ψγ, with the photons being measured through conversions to e⁺e⁻, which allows the two states to be well resolved. The polarizations are measured in the helicity frame, through the analysis of the χ_(c2) to χ_(c1) yield ratio as a function of the polar or azimuthal angle of the positive muon emitted in the J/ψ → μ⁺μ⁻ decay, in three bins of J/ψ transverse momentum. While no differences are seen between the two states in terms of azimuthal decay angle distributions, they are observed to have significantly different polar anisotropies. The measurement favors a scenario where at least one of the two states is strongly polarized along the helicity quantization axis, in agreement with nonrelativistic quantum chromodynamics predictions. This is the first measurement of significantly polarized quarkonia produced at high transverse momentum

    Combined search for the quarks of a sequential fourth generation

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    Results are presented from a search for a fourth generation of quarks produced singly or in pairs in a data set corresponding to an integrated luminosity of 5 inverse femtobarns recorded by the CMS experiment at the LHC in 2011. A novel strategy has been developed for a combined search for quarks of the up and down type in decay channels with at least one isolated muon or electron. Limits on the mass of the fourth-generation quarks and the relevant Cabibbo-Kobayashi-Maskawa matrix elements are derived in the context of a simple extension of the standard model with a sequential fourth generation of fermions. The existence of mass-degenerate fourth-generation quarks with masses below 685 GeV is excluded at 95% confidence level for minimal off-diagonal mixing between the third- and the fourth-generation quarks. With a mass difference of 25 GeV between the quark masses, the obtained limit on the masses of the fourth-generation quarks shifts by about +/- 20 GeV. These results significantly reduce the allowed parameter space for a fourth generation of fermions.Comment: Replaced with published version. Added journal reference and DO

    Measurement of the t t-bar production cross section in the dilepton channel in pp collisions at sqrt(s) = 7 TeV

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    The t t-bar production cross section (sigma[t t-bar]) is measured in proton-proton collisions at sqrt(s) = 7 TeV in data collected by the CMS experiment, corresponding to an integrated luminosity of 2.3 inverse femtobarns. The measurement is performed in events with two leptons (electrons or muons) in the final state, at least two jets identified as jets originating from b quarks, and the presence of an imbalance in transverse momentum. The measured value of sigma[t t-bar] for a top-quark mass of 172.5 GeV is 161.9 +/- 2.5 (stat.) +5.1/-5.0 (syst.) +/- 3.6(lumi.) pb, consistent with the prediction of the standard model.Comment: Replaced with published version. Included journal reference and DO
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