Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor

Gain switching of monolithic 1.3 μm InAs/GaAs quantum dot lasers on silicon

© 1983-2012 IEEE. We report the first demonstration of gain-switched optical pulses generated by continuous-wave 1.3 μm InAs/GaAs quantum dot (QD) broad-area lasers directly grown on silicon. The shortest observed pulses have typical durations between 175 and 200 ps with peak output powers of up to 66 mW. By varying the drive current pulsewidth and amplitude systematically, we find that the peak optical power is maximized through sufficiently long high-amplitude drive pulses, whereas shorter drive pulses with high amplitudes yield the narrowest achievable pulses. A three-level rate equation travelling-wave model is used for the simulation of our results in order to gain a first insight into the underlying physics and the laser parameters responsible for the observed behavior. The simulations indicate that a limited gain from the InAs QDs and a very high gain compression factor are the main factors contributing to the increased pulsewidth. As the optical spectra of the tested broad-area QD laser give a clear evidence of multitransverse-mode operation, the laser's dynamic response could be additionally limited by transversal variations of the gain, carrier density, and photon density over the 50 μm wide laser waveguide

Understanding the bandwidth limitations in monolithic 1.3 μm InAs/GaAs quantum dot lasers on silicon

In this paper, we present measurements and simulations of the small-signal modulation response of monolithic continuous-wave 1.3 μm InAs/GaAs quantum dot (QD) narrow ridge-waveguide lasers on a silicon substrate. The 2.5 mm-long lasers investigated demonstrate 3dB modulation bandwidths of 1.6 GHz, D-factors of 0.3 GHz/mA1/2, modulation current efficiencies of 0.4 GHz/mA1/2, and K-factors of 2.4 ns and 3.7 ns. Since the devices under test are not designed for high-speed operation due to their long length and hence long photon lifetime, the modulation response curves are used as a fitting template for numerical simulations with spatiotemporal resolution to gain insight into the underlying laser physics. The obtained parameter set is used to unveil the true potential of the laser material in an optimized device geometry by modeling the small-signal response at different cavity lengths, mirror reflectivities, and for different numbers of QD layers. The simulations predict a maximum 3dB modulation bandwidth of 5 GHz to 7 GHz for a 0.75 mm-long cavity with 99 % and 60 % high-reflection coatings and ten QD layers. Modeling the impact of dislocations on the dynamic performance qualitatively reveals that enhanced non-radiative recombination in the wetting layer leaves the modulation bandwidth of QD lasers on silicon almost unaffected, while dislocation-induced optical loss does not pose a problem, as long as sufficient gain is provided by the QD active region.UK EPSRC Grant, No. EP/J012904/1 & EP/J012815/1 Qualcomm Inc. studentship Royal Academy of Engineering, Reference No. RF201617/16/2

Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

We report the first demonstration of gain-switched optical pulses generated by continuous-wave 1.3 μm InAs/GaAs quantum dot (QD) broad-area lasers directly grown on silicon. The shortest observed pulses have typical durations between 175 and 200 ps with peak output powers of up to 66 mW. By varying the drive current pulsewidth and amplitude systematically, we find that the peak optical power is maximized through sufficiently long high-amplitude drive pulses, whereas shorter drive pulses with high amplitudes yield the narrowest achievable pulses. A three-level rate equation travelling-wave model is used for the simulation of our results in order to gain a first insight into the underlying physics and the laser parameters responsible for the observed behavior. The simulations indicate that a limited gain from the InAs QDs and a very high gain compression factor are the main factors contributing to the increased pulsewidth. As the optical spectra of the tested broad-area QD laser give a clear evidence of multitransverse-mode operation, the laser's dynamic response could be additionally limited by transversal variations of the gain, carrier density, and photon density over the 50 μm wide laser waveguide

Small-Signal Modulation and Analysis of Monolithic 1.3μm InAs/GaAs Quantum Dot Lasers on Silicon

The first small-signal modulation experiments with monolithic single transverse mode InAs/GaAs lasers on Si demonstrate a 3dB bandwidth of 1.6 GHz. By fitting the modulation response curves, we extract high-speed laser parameters allowing an insight into the intrinsic laser dynamics

Ultrafast nonlocal control of spontaneous emission

Solid-state cavity quantum electrodynamics systems will form scalable nodes of future quantum networks, allowing the storage, processing and retrieval of quantum bits, where a real-time control of the radiative interaction in the cavity is required to achieve high efficiency. We demonstrate here the dynamic molding of the vacuum field in a coupled-cavity system to achieve the ultrafast nonlocal modulation of spontaneous emission of quantum dots in photonic crystal cavities, on a timescale of ~200 ps, much faster than their natural radiative lifetimes. This opens the way to the ultrafast control of semiconductor-based cavity quantum electrodynamics systems for application in quantum interfaces and to a new class of ultrafast lasers based on nano-photonic cavities.Comment: 15 pages, 4 figure

Performance of the CMS Cathode Strip Chambers with Cosmic Rays

The Cathode Strip Chambers (CSCs) constitute the primary muon tracking device in the CMS endcaps. Their performance has been evaluated using data taken during a cosmic ray run in fall 2008. Measured noise levels are low, with the number of noisy channels well below 1%. Coordinate resolution was measured for all types of chambers, and fall in the range 47 microns to 243 microns. The efficiencies for local charged track triggers, for hit and for segments reconstruction were measured, and are above 99%. The timing resolution per layer is approximately 5 ns

CMS Data Processing Workflows during an Extended Cosmic Ray Run

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Aligning the CMS Muon Chambers with the Muon Alignment System during an Extended Cosmic Ray Run

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