Spectroscopic ellipsometry study of barrier width effect in self-organized InGaAs/GaAs QDs laser diodes

Molecular beam epitaxy (MBE) is used to grow InGaAs/GaAs quantum dots (QDs) laser diodes (LDs) with different barrier widths (5, 10 and 15 nm) at 580 ºC on GaAs substrates. Optical properties of the InGaAs/GaAs QDs LDs have been investigated by using the spectroscopic ellipsometry (SE) technique. A general oscillator optical model has been utilized to fit the experimental data in order to obtain the LD layer thicknesses, refractive index and absorption coefficient. The dielectric function, the energy band gap and the surface and volume energy loss functions are computed in the energy range 1-6 eV. The optical properties of the deposited InGaAs/GaAs QDs LDs are found to be affected by the barrier width, which give more insight into carriers dynamics and optical parameters in these devices. The refractive indices, the extinction coefficients and the dielectric constants of the LDs with barrier widths 15 and 10 nm are relatively larger than those of the LD with barrier width 5 nm. These indicate that optical properties of LDs with larger barrier widths (15 and 10 nm) will be improved. The interband transition energies in the three devices have calculated and identified. Two energy gaps at 1.04 and ~1.37 eV are obtained for all the heterostructures which indicates that fabricated LDs may be operating for a wavelength of 1.23 m at room temperature

Structural, EPR and optical properties of Zn

ZnO nanopowders with different 3d transition metal (TM) doping (TM = Mn, Fe, Co, Ni) were synthesized by a new protocol based on slow hydrolyse of zinc acetate dissolved in methanol and supercritical drying in ethyl alcohol. The prepared Zn1−xTMxO (x = 0.25) nanoparticles were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), differential scanning calorimetry (DSC), optical absorption and electron paramagnetic resonance spectroscopy (EPR). The results demonstrated that the TM dopant significantly affects the structural and magnetic properties of the samples. From the XRD spectra, the lattice parameters, average crystallite size and microstrain values were obtained. All ZnTMO nanoparticles show an expansion of the lattice parameters compared those of the bulk samples. Unit cell volume was minimized with Fe doping and increased as the atomic number of the dopant moved away from Fe. The XRD pattern indicates the formation of hexagonal wurtzite phase of ZnO for all the TM dopants. Electron microscopy characterization showed that the size of the Zn1−xTMxO particles is about 25 nm did not change significantly for the different dopants. Optical absorption measurements show that band gap energies of the TM-doped ZnO nanoparticles are around 3.2 eV. The Urbach energy of the ZnTMO nanopowders varies with the TM dopant. From magnetic measurements we observed the presence of room temperature ferromagnetic order in our TM-doped ZnO samples. EPR spectra confirm that TM ions were mainly incorporated as TM2+, occupying the Zn2+ sites in the wurtzite structure of ZnO. Room temperature ferromagnetic order was observed only in Ni- and Co-doped ZnO samples, whereas Mn- and Fe-doped powders showed only antiferromagnetic and paramagnetic interactions, respectively. The correlation between the structural and magnetic properties as a function of the TM dopant is discussed

Optical absorption of Zn(V,Al)O thin films studied by spectroscopic ellipsometry from 1 to 6 eV

Aerogel nanoparticles prepared with various Al concentrations were used as a target for the deposition of (V,Al) co-doped ZnO films by rf-magnetron sputtering on glass substrates. The influence of Al content on the structural and the optical properties of the Zn(V,Al)O films was investigated by X-ray diffraction and spectroscopic ellipsometry (SE). It is found that all films exhibit one high intensity (0 0 2) peak, indicating that they have c-axis preferred orientation due to self-texturing mechanism. SE measurements, used to determine the complex pseudo dielectric functions, were carried out at room temperature in the 1–6 eV photon energy region. The excitonic edge of the fundamental band gap (E0) transition in the imaginary part of the dielectric function of the Zn(V,Al)O films is observed around 3.5 eV and shows a dependence on the Al content. The E0 absorption edge of the Zn0.9−x V0.1AlxO alloys shows a blueshift from that of pure ZnO, reaching 389 meV for x = 0.02. This blueshift is interpreted by the Burstein-Moss effect. By analyzing the dielectric function, reduced effective mass m* of the Zn0.9−x V0.1AlxO alloy is extracted and shows good agreement with literature values

Isolation, Purification and Structural Characterestics of Chondroitin Sulfate from Smooth hound Cartilage: In vitro Anticoagulant and Antiproliferative Properties

Chondroitin sulfate was extracted from the cartilage of smooth hound (CSSH) and then purified by anion exchange chromatography. The structual characteristic of CSSH was evaluated by acetate cellulose electrophoresis, FTIR, 13C NMR and SAX-HPLC. Molecular weight of CSSH was average 68.78 KDa. Disaccharide analysis indicated that CSSH was predominately composed of monosulfated disaccharides in position 6 and 4 of the N-acetylgalactosamine (45.34% and 32.49%, respectively). CSSH was tested for in vitro anticoagulant activity using the three classical coagulation assays (activated partial thromboplastin time (aPTT), prothrombine time (TT) and thrombin time (PT) tests). The finding showed that CSSH prolonged significatively (p < 0.05), aPTT, TT and PT about 1.4, 3.44 and 1.21 fold, respectively, greater than that of the negative control at a concentration of 100 μg/ml. The CSSH caused a significant antiproliferative activity against HCT116 cell, which was 79% of cell proliferation inhibition at the concentration of 1000 μg/ml. Further, CSSH presented no toxicity against the normal cells and no hemolysis towards bovine erythrocytes for all concentrations tested. CSSH demonstrated hopeful antiproliferative and anticoagulant potential, which may be used as a novel and effective drug

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

Abstract This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsometry (SE), and picosecond time-resolved photoluminescence. Distinctive double-emission peaks are observed in the PL spectra of the sample. From the excitation power-dependent and temperature-dependent PL measurements, these emission peaks are associated with the ground-state transition from InAs QDs with two different size populations. Luminescence measurements were carried out as function of temperature in the range of 10–300 K by the PL technique. The low temperature PL has shown an abnormal emission which appeared at the low energy side and is attributed to the recombination through the deep levels. The PL peak energy presents an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the localized-state ensemble model to explain the usual photoluminescence behaviors. The quantitative study shows that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers. We have determined the localization depth and its effect on the application of the investigated heterostructure for photovoltaic cells. The model gives an overview to a possible amelioration of the InAs/InGaAs/GaAs QDs SCs properties based on the theoretical calculations